Cited by 51Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesMultiferroics and related materials

Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties

Vorotilov, K.A., Yanovskaya, M.I., Turevskaya, E.P., Sigov, A.S.·1999·Journal of Sol-Gel Science and Technology

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Crossref · 10.1023/a:1008776120997

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Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film-substrate interface.

    “Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film–substrate interface [34,35,36,37,38,39,40,41,42,43,44,45].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [34]

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Authors
Vorotilov, K. A., Yanovskaya, M. I., Turevskaya, E. P., & Sigov, A. S.
Affiliations
  • MIREA - Russian Technological University (RU)
  • Karpov Institute of Physical Chemistry (RU)
  • Lomonosov Moscow State University (RU)
Corresponding author
Yanovskaya, M.I.
Venue
Journal of Sol-Gel Science and Technology
Published
1999-10
Volume
16
Issue
1-2
Pages
109-118
ISSN
  • 0928-0707 (ISSN-L)
  • 1573-4846
OpenAlex
W57012802
Cited by
51
References
0
Citations by year
2024: 3 · 2023: 1 · 2022: 1 · 2021: 2 · 2020: 4 · 2019: 1 · 2018: 3 · 2017: 2 · 2015: 2 · 2014: 1 · 2013: 4 · 2012: 1
FWCI
1.14
Type
journal article
Language
en
Open access
closed
Locations
Journal of Sol-Gel Science and Technology (publishedVersion)
Funders
Russian Foundation for Basic Research
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
ferroelectric thin films, sol-gel synthesis, lead zirconate titanate, lead excess, SrBi2Ta2O9, barium strontium titanate, dielectric constant, annealing temperature, lithium niobate, zirconium tin titanate, remanent polarization

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