Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film-substrate interface.
“Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film–substrate interface [34,35,36,37,38,39,40,41,42,43,44,45].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [34]
Cited by
Sorted by citations
Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
Self-citation
- Authors
- Vorotilov, K. A., Yanovskaya, M. I., Turevskaya, E. P., & Sigov, A. S.
- Affiliations
- MIREA - Russian Technological University (RU)
- Karpov Institute of Physical Chemistry (RU)
- Lomonosov Moscow State University (RU)
- Corresponding author
- Yanovskaya, M.I.
- ORCID
- Vorotilov, K.A.
- Venue
- Journal of Sol-Gel Science and Technology
- Published
- 1999-10
- Volume
- 16
- Issue
- 1-2
- Pages
- 109-118
- ISSN
- 0928-0707 (ISSN-L)
- 1573-4846
- OpenAlex
- W57012802
- Cited by
- 51
- References
- 0
- Citations by year
- 2024: 3 · 2023: 1 · 2022: 1 · 2021: 2 · 2020: 4 · 2019: 1 · 2018: 3 · 2017: 2 · 2015: 2 · 2014: 1 · 2013: 4 · 2012: 1
- FWCI
- 1.14
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- Journal of Sol-Gel Science and Technology (publishedVersion)
- Funders
- Russian Foundation for Basic Research
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- ferroelectric thin films, sol-gel synthesis, lead zirconate titanate, lead excess, SrBi2Ta2O9, barium strontium titanate, dielectric constant, annealing temperature, lithium niobate, zirconium tin titanate, remanent polarization
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review