The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators
Open accessAbstract
Topological insulators (TIs) are quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The most challenging problem faced by current investigations of these materials is to establish the existence of significant bulk conduction. Here we show how the band structure of topological insulators can be engineered by molecular beam epitaxy growth of (Bi(1-x)Sb(x))(2)Te(3) ternary compounds. The topological surface states are shown to exist over the entire composition range of (Bi(1-x)Sb(x))(2)Te(3), indicating the robustness of bulk Z(2) topology. Most remarkably, the band engineering leads to ideal TIs with truly insulating bulk and tunable surface states across the Dirac point that behaves like one-quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on well-established semiconductor technology.
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Cites
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Cited by
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
Chang, C.-Z., Zhang, J., Feng, X., Shen, J., Zhang, Z., Guo, M., Li, K., Ou, Y., Wei, P., Wang, L.-L., et al. (2013) · Science · doi:10.1126/science.1234414 · Cited by 3,893
Self-citationTopological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789
Colloquium : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587
Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials
Ando, Y., & Fu, L. (2015) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-031214-014501 · Cited by 723
Checkelsky, J. G., Yoshimi, R., Tsukazaki, A., Takahashi, K. S., Kozuka, Y., Falson, J., Kawasaki, M., & Tokura, Y. (2014) · Nature Physics · doi:10.1038/nphys3053 · Cited by 666
Metadata
- Authors
- Zhang, J., Chang, C.-Z., Zhang, Z., Wen, J., Feng, X., Li, K., Liu, M., He, K., Wang, L., Chen, X., Xue, Q.-K., Ma, X., & Wang, Y.
- Venue
- Nature Communications
- Published
- 2011-12-06
- Volume
- 2
- Issue
- 1
- Pages
- 574-574
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W1994656564
- Cited by
- 570
- References
- 14
- FWCI
- 16.86
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Zhang, J., Chang, C.-Z., Zhang, Z., Wen, J., Feng, X., Li, K., Liu, M., He, K., Wang, L., Chen, X., Xue, Q.-K., Ma, X., & Wang, Y. (2011). Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators. Nature Communications. https://doi.org/10.1038/ncomms1588
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