A tunable topological insulator in the spin helical Dirac transport regime
Open accessAbstract
Helical Dirac fermions-charge carriers that behave as massless relativistic particles with an intrinsic angular momentum (spin) locked to its translational momentum-are proposed to be the key to realizing fundamentally new phenomena in condensed matter physics. Prominent examples include the anomalous quantization of magneto-electric coupling, half-fermion states that are their own antiparticle, and charge fractionalization in a Bose-Einstein condensate, all of which are not possible with conventional Dirac fermions of the graphene variety. Helical Dirac fermions have so far remained elusive owing to the lack of necessary spin-sensitive measurements and because such fermions are forbidden to exist in conventional materials harbouring relativistic electrons, such as graphene or bismuth. It has recently been proposed that helical Dirac fermions may exist at the edges of certain types of topologically ordered insulators-materials with a bulk insulating gap of spin-orbit origin and surface states protected against scattering by time-reversal symmetry-and that their peculiar properties may be accessed provided the insulator is tuned into the so-called topological transport regime. However, helical Dirac fermions have not been observed in existing topological insulators. Here we report the realization and characterization of a tunable topological insulator in a bismuth-based class of material by combining spin-imaging and momentum-resolved spectroscopies, bulk charge compensation, Hall transport measurements and surface quantum control. Our results reveal a spin-momentum locked Dirac cone carrying a non-trivial Berry's phase that is nearly 100 per cent spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers point and can be driven to the long-sought topological spin transport regime. The observed topological nodal state is shown to be protected even up to 300 K. Our demonstration of room-temperature topological order and non-trivial spin-texture in stoichiometric Bi(2)Se(3).M(x) (M(x) indicates surface doping or gating control) paves the way for future graphene-like studies of topological insulators, and applications of the observed spin-polarized edge channels in spintronic and computing technologies possibly at room temperature.
AI snapshot
Written from the paper’s full text.
TL;DR
The paper reports spin- and angle-resolved photoemission evidence for a spin-momentum-locked, nearly 100% spin-polarized Dirac surface state in Bi₂Se₃/Bi₂Te₃ and shows that Ca bulk compensation plus NO₂ surface dosing can tune the surface Fermi level to the Dirac point, realizing a topological transport regime stable to 300 K. It establishes room-temperature topological order and proposes future transport, spintronic, Majorana, and fractional-charge experiments.
Key findings
- Spin-resolved ARPES on Bi₂Te₃ at binding energy −20 meV along Γ–M found a clear y-component polarization of equal magnitude and opposite sign for opposite momenta; numerical fits yield 100(±15)% polarized spins pointing along k × z, while x and z components show no clear signal within statistical error.
- Ca substitution in Bi₂Se₃ tunes the bulk Fermi level: resistivity peaks at 0.25% Ca and the Hall carrier density changes sign; E_F shifts by about 0.3 eV between δ = 0 and δ = 0.0025, placing E_F about 0.2 eV below the bulk conduction band minimum, consistent with the known ~0.35 eV bulk gap.
- NO₂ surface dosing raises the surface Dirac point from E_B ≈ −0.3 eV at 0 L to −0.15 eV at 0.1 L and to charge neutrality (E_B = 0 eV) at 2 L; 0.1 L removes approximately 0.0066 electrons per surface unit cell, and an excess 2 L removes an additional ~0.005 electrons per unit cell, reducing the Fermi surface to a point.
- The charge-neutral Dirac ground state is robust up to 300 K over days-long measurement times; angle-integrated intensity near the Dirac point decreases linearly to zero, and the same topological number ν₀ = 1 is inferred for Bi₁.₉₉₇₅Ca₀.₀₀₂₅Se₃.NO₂.
Methods
- Spin-integrated ARPES was performed at Advanced Light Source beamlines 12.0.1 and 7.0.1 with 29–100 eV photons; typical energy and momentum resolutions were 15 meV and 1% of the surface Brillouin zone, and 50 meV and 2% of the surface Brillouin zone, respectively.
- Spin-resolved ARPES was performed at the SIS beamline, Swiss Light Source, using the COPHEE spectrometer with two 40 kV classical Mott detectors measuring all three spatial spin components; measurements used 20–22 eV photons with 80 meV and 3% of the surface Brillouin zone resolutions.
- Samples were cleaved in ultra-high vacuum better than 5 × 10⁻¹¹ torr and held at 10 K unless otherwise specified, with spin-resolved data collected at 50 K; NO₂ adsorption used controlled exposures to NO₂ gas, and calculations used the LAPW method in slab geometry with WIEN2K.
Limitations
- Stated: the surface-state dispersion shows a pronounced time dependence after cleavage, so data collection times were only long enough to ensure sufficient statistics for measuring the spin-polarized character; the surface Fermi level rises back over a typical time scale of 18 hours due to surface band bending, meaning bulk Ca doping alone does not change E_F relative to the surface Dirac point in the ground state.
- Stated: increasing NO₂ adsorption causes increasing surface disorder, making measured spectra progressively more diffuse and gradually reducing total photoemission intensity from the buried Bi₂₋δCaδSe₃ surface; non-Lorentzian spin-resolved lineshapes and their non-exact merger at large |k_x| are attributed to time evolution of the surface band dispersion, the dominant source of statistical uncertainty.
- Evident: no direct transport measurement of the topological transport regime is reported; the paper states that results “pave the way for future transport based studies” and that direct detection of surface-edge states “would be possible” using transport methods. Also stated: the helical nature of surface electrons is most clearly resolved in Bi₂Te₃ because Bi₂Se₃ has an additional bulk conduction-band contribution around Γ.
Model-written summary. Check it against the paper before relying on it.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
0 of 7 cited sources checked · 0 supported · 0 flagged
- Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
When a 0.25% concentration of Ca is introduced, EF is dramatically lowered to lie near the Dirac node.
“When a 0.25% concentration of Ca is introduced, E F is dramatically lowered to lie near the Dirac node (Fig. 2(d))”
Quote in the paperSubstantial claim - Findingnone given§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The observed topological nodal Dirac ground state is protected even up to room temperature (300 K).
“The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K).”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
Hole carriers can be systematically introduced into the surface of Bi2-δCaδSe3 by dosing with NO2 molecules.
“we show that hole carriers can be systematically introduced into the surface by dosing with NO 2 molecules”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The surface electrons of both Bi2Se3 and Bi2Te3 exhibit a finite density of states near EF.
“Although the surface electrons of both Bi 2 Se 3 and Bi 2 Te 3 exhibit a finite density of states near E F (Figs 1(a)-(d))”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The paper reports the first realization of a tunable topological insulator in a bismuth based class by combining spin- and momentum-resolved spectroscopies, bulk charge compensation and surface control.
“Here we report the first realization of a tunable topological insulator in a bismuth based class by combining spin- and momentum-resolved spectroscopies, bulk charge compensation and surface control.”
Quote in the paperSubstantial claim
- Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The charge neutral point-like FS is robust up to room temperature (T=300 K) over days long measurement times.
“Figures 4(c) and (d) illustrate that the charge neutral point-like FS (Fig. 4(a)) is robust up to room temperature ( T = 300 K) over days long measurement times.”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
As Ca concentration increases from 0% to 0.5%, the low temperature resistivity sharply peaks at 0.25%.
“Figure 2(a) shows that as the Ca concentration increases from 0% to 0.5%, the low temperature resistivity sharply peaks at 0.25%”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The spin-momentum locked Dirac cone is nearly 100% spin-polarized.
“Our results reveal a spin-momentum locked Dirac cone that is nearly 100% spin-polarized”
- Also stated in: § First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime · plain
“The fit results yield 100( ± 15)% polarized (see Fig. 1(h)) spins that point along the ( k × z ) direction”
Quote in the paperSubstantial claim - Also stated in: § First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime · plain
- Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
With increasing surface hole donor concentration, the binding energy of the surface Dirac point rises monotonically towards EF.
“Figure 3 shows that with increasing surface hole donor concentration, the binding energy of the surface Dirac point rises monotonically towards E F .”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
In as-grown Bi2Se3, EF intersects the electron-like bulk conduction band.
“We also observe that E F intersects the electron-like bulk conduction band.”
Quote in the paperSubstantial claim - Findingreasoning§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
For δ=0.0025, EF is located 0.2 eV below the CBM.
“an 0.3 eV shift in E F between δ = 0 and δ = 0.0025 suggests that for δ = 0.0025, E F is located 0.2 eV below the CBM.”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The resistivity peak occurs at a Ca concentration where a change in sign of the Hall carrier density is observed.
“The resistivity peak occurs at a Ca concentration where a change in sign of the Hall carrier density also is observed (Fig. 2(b))”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
No further changes of the chemical potential are observed with higher NO2 dosages.
“No further changes of the chemical potential are observed with higher dosages.”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
In as-grown (δ=0) Bi2Se3 samples, a single surface Dirac cone is observed with EF lying nearly 0.3 eV above the Dirac node forming an electron Fermi surface.
“In the as-grown ( δ = 0) Bi 2 Se 3 samples, a single surface Dirac cone is observed with E F lying nearly 0.3 eV above the Dirac node forming an electron Fermi surface (FS).”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
EF rises back up over time across all samples such that all spectra relax back to a δ=0 like spectrum on a typical time scale of 18 hours.
“However, we observe that E F rises back up over time across all samples such that all spectra relax back to a δ = 0 like spectrum on a typical time scale of 18 hours (Fig. 2(l)).”
Quote in the paperSubstantial claim - Findingcitation§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
There is an additional contribution to the density of states around momentum Γ from the spin-degenerate bulk conduction band in Bi2Se3.
“there is an additional contribution to the density of states around momentum ¯ Γ from the spin-degenerate bulk conduction band in Bi 2 Se 3 [15].”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [15] Xia, Y. et al. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nature Phys. 5, 398–402 (2009) source
Not checked in the free run.
- Findingnone given§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The surface Dirac point in the ground state of most insulating Bi1.9975Ca0.0025Se3 lies ∼0.3 eV below EF.
“Because the surface Dirac point in the ground state of most insulating Bi 1 . 9975 Ca 0 . 0025 Se 3 lies ∼ 0.3 eV below E F”
Quote in the paperSubstantial claim - Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
In Bi2Te3, the spin and momentum directions of surface electrons are one-to-one locked.
“In the y direction on the other hand, clear polarization signals of equal magnitude and opposite sign are observed for surface electrons of opposite momentum, evidence that the spin and momentum directions are one-to-one locked.”
Quote in the paperSubstantial claim - Interpretationcitation§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The slow upward shift of the surface Fermi level is due to a surface band bending effect commonly observed in most semiconductors.
“Such a slow upward shift of the surface Fermi level has been observed also in Bi 2 Te 3 [17] and is due to a surface band bending effect commonly observed in most semiconductors (SI).”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [17] Noh, H.-J. et al. Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy. Europhys. Lett. 81, 57006 (2008) source
Not checked in the free run.
- Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The system undergoes a metal to insulator to metal transition as Ca concentration increases.
“which suggests that the system undergoes a metal to insulator to metal transition.”
Quote in the paperSubstantial claim - Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The systematic lowering of EF with increasing δ in Bi2-δCaδSe3 observed in early time ARPES measurements consistently explains the measured transport behavior.
“The systematic lowering of E F with increasing δ in Bi 2 -δ Ca δ Se 3 observed in early time ARPES measurements (Figs 2(i)-(k)), which reflect the electronic structure of the sample bulk, consistently explain the measured transport behavior.”
Quote in the paperSubstantial claim - Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
A density of states that decreases linearly to zero at the Dirac point energy at 300 K is evidence that the low energy properties of Bi1.9975Ca0.0025Se3.NO2 are dominated by a novel ground state that features massless helical Dirac fermions with nearly 100% spin polarization.
“A density of states that decreases linearly to zero at the Dirac point energy at 300 K (Fig. 4(f)) is further evidence that the low energy properties of Bi 1 . 9975 Ca 0 . 0025 Se 3 .NO 2 are dominated by a novel ground state that features massless helical Dirac fermions with nearly 100% spin polarization.”
Quote in the paperSubstantial claim - Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The surface electrons of Bi2X3 (X=Se,Te) are helical Dirac fermions of Z2 topological order origin.
“Our combined observations of a linear dispersion relation and a one-to-one locking of momentum and spin directions allow us to conclude that the surface electrons of Bi 2 X 3 (X = Se, Te) are helical Dirac fermions of Z 2 topological order origin (Fig. 1).”
Quote in the paperSubstantial claim - Premisecitation§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The helical Dirac fermion on the surface of Bi2Se3 owes its existence to a non-zero topological number ν0 given by (-1)^ν0 = Π_kT Π_{m=1}^N ξ_{2m}(kT).
“The helical Dirac fermion on the surface of Bi 2 Se 3 owes its existence to a non-zero topological number ν 0 given by (-1) ν 0 = Π k T Π N m =1 ξ 2 m ( k T )”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [4] Qi, X.-L., Hughes, T. L. & Zhang, S.-C. Topological field theory of time-reversal invariant insulators. Phys. Rev. B 78, 195424 (2008) source
Not checked in the free run.
- Premisereasoning§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
Helical nodal Dirac fermions are forbidden from acquiring a mass through band gap formation because they are located around time-reversal invariant (Kramers') momenta.
“Helical nodal Dirac fermions are forbidden from acquiring a mass through band gap formation because they are located around time-reversal invariant (Kramers') momenta k T = ¯ Γ or ¯ M (Fig. 4(h)).”
Quote in the paperSubstantial claim - Interpretationreasoning§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
For δ=0.0025, EF is in the bulk band gap.
“This is consistent with E F being in the bulk band gap because the indirect energy gap between the CBM and the VBM is known from both tunneling [24] and optical [25] data and theory [22] to be nearly 0.35 eV.”
Quote in the paperSubstantial claim0 of 3 sources checked- cites [24] Urazhdin, S. et al. Surface effects in layered semiconductors Bi2Se3 and Bi2Te3 . Phys. Rev. B 69, 085313 (2004) source
Not checked in the free run.
- cites [25] Black, J., Conwell, E. M., Seigle, L. & Spencer, C. W. Electrical and optical properties of some M2 V-BN3 VI-B semiconductors. J. Phys. Chem. Solids 2, 240–251 (1957) source
Not checked in the free run.
- cites [22] Larson, P. et al. Electronic structure of Bi2X3 (X = S, Se, T) compounds: comparison of theoretical calculations with photoemission studies. Phys. Rev. B 65, 085108 (2001) source
Not checked in the free run.
- Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
The observed spin-momentum locking pattern confirms a non-trivial π Berry's phase on the surface.
“This also confirms a non-trivial π Berrys phase on the surface due to the spin-momentum locking pattern that we observe”
Quote in the paperSubstantial claim - Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime
Ca acts as a highly effective hole donor in Bi2Se3.
“which is consistent with Ca acting as a highly effective hole donor.”
Quote in the paperSubstantial claim
- May combine two claims. 11
May combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeAs Ca concentration is increased further, by δ=0.01, EF is located clearly below the Dirac node and intersects the hole-like bulk valence band.
“As the Ca concentration is increased further, the position of E F continues a downward trend such that by δ = 0.01, it is located clearly below the Dirac node (Fig. 2(e)) and intersects the hole-like bulk valence band.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regime0.1 L of NO2 removes approximately 0.0066 electrons per surface unit cell of Bi2-δCaδSe3(111), and an excess of 2 L reduces the FS to a single point within experimental resolution, with an additional 0.005 electrons per unit cell removed.
“We find that 0.1 L of NO 2 removes approximately 0.0066 electrons per surface unit cell of Bi 2 -δ Ca δ Se 3 (111), and an excess of 2 L reduces the FS to a single point within our experimental resolution, which has an additional 0.005 electrons per unit cell removed.”
Quote in the paperSubstantial claimMay combine two claims.
Findingcitation§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeThe direct demonstration of spin-polarized edge channels and room temperature operability of chemically gated stoichiometric Bi2Se3 or Bi2-δCaδSe3 was not achieved in purely 2D topological systems such as Hg(Cd)Te quantum wells.
“Our direct demonstration of spin-polarized edge channels and room temperature operability of chemically gated stoichiometric Bi 2 Se 3 or Bi 2 -δ Ca δ Se 3 , not achieved in purely 2D topological systems such as Hg(Cd)Te quantum wells [29]”
Quote in the paperSubstantial claim0 of 1 sources checked- cites [29] Konig, M. et al. Quantum spin Hall insulator state in HgTe quantum wells. Science 318, 766–770 (2007) source
Not checked in the free run.
May combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeFor measured Ca concentrations below and above 0.25%, electrical conduction is supported by electron and hole carriers respectively.
“which shows that for measured Ca concentrations below and above 0.25%, electrical conduction is supported by electron and hole carriers respectively.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeBulk Ca doping succeeds in tuning EF between the bulk valence and conduction bands, but does not change the position of EF relative to the surface Dirac point in the ground state.
“Therefore, although bulk Ca doping succeeds in tuning E F between the bulk valence and conduction bands, it does not change the position of E F relative to the surface Dirac point in the ground state.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeStarting from EB ∼ -0.3 eV at 0 L, the surface Dirac point rises to -0.15 eV at 0.1 L where the surface bent CBM has completely disappeared, and finally to the charge neutrality point (EB = 0 eV) at 2 L.
“Starting from E B ∼ -0.3 eV at a 0 Langmuir (L) dose, it rises to -0.15 eV at 0.1 L where the surface bent CBM has completely disappeared, and finally to the charge neutrality point ( E B = 0 eV) at 2 L.”
Quote in the paperSubstantial claimMay combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeThe fitted spin polarization of forward and backward moving electrons in Bi2Te3 is 100(±15)% and points along the (k × z) direction.
“The fit results yield 100( ± 15)% polarized (see Fig. 1(h)) spins that point along the ( k × z ) direction”
Quote in the paperSubstantial claimMay combine two claims.
Findingown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeThe Dirac cone exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological transport regime.
“which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological transport regime.”
Quote in the paperSubstantial claimMay combine two claims.
Interpretationreasoning§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeBecause surface doping does not affect the carrier density in the bulk (which thus remains insulating), the energy of the Dirac point is lifted above the bulk VBM; a new time independent electronic ground state is realized that lies in the topological transport regime with EF intersecting the Dirac node.
“Because surface doping does not affect the carrier density in the bulk (which thus remains insulating), the energy of the Dirac point is lifted above the bulk VBM; a new time independent electronic ground state is realized that lies in the topological transport regime with E F intersecting the Dirac node.”
Quote in the paperSubstantial claim- Rests on an assumption: Surface doping with NO2 does not affect the carrier density in the bulk, which remains insulating.
May combine two claims.
Interpretationreasoning§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeBoth Ca2+ and NO2- are non-magnetic and so do not break time-reversal symmetry, therefore the same topological number (ν0=1) applies even in the Dirac transport regime realized by our method.
“Both Ca 2+ and NO 2 -are non-magnetic and so do not break timereversal symmetry, therefore the same topological number ( ν 0 = 1) applies even in the Dirac transport regime (Fig. 4) realized by our method shown here, which is stable with both time and temperature.”
Quote in the paperSubstantial claim- Rests on an assumption: Ca2+ and NO2- are non-magnetic and do not break time-reversal symmetry.
May combine two claims.
Interpretationown data§ First observation of Spin-Momentum helical locking in Bi 2 Se 3 and Bi 2 Te 3 , demonstration of Topological-Order at 300K and a realization of topological-transport-regimeBecause Ca dopants are present in only trace quantities in Bi1.9975Ca0.0025Se3.NO2, the values of ξ2m(kT) do not deviate from those of pure Bi2Se3, as evidenced by the persistence of a single gapless surface band in both Bi2Se3 and Bi1.9975Ca0.0025Se3.
“Because Ca dopants are present in only trace quantities in Bi 1 . 9975 Ca 0 . 0025 Se 3 .NO 2 , the values of ξ 2 m ( k T ) do not deviate from those of pure Bi 2 Se 3 , as evidenced by the persistence of a single gapless surface band in both Bi 2 Se 3 and Bi 1 . 9975 Ca 0 . 0025 Se 3 .”
Quote in the paperSubstantial claim
The paper relies on this without support.
Surface doping with NO2 does not affect the carrier density in the bulk, which remains insulating.
“Because surface doping does not affect the carrier density in the bulk (which thus remains insulating)”
The paper relies on this without support.
Ca2+ and NO2- are non-magnetic and do not break time-reversal symmetry.
“Both Ca 2+ and NO 2 -are non-magnetic and so do not break timereversal symmetry”
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
The value of ν0 or θ can be determined from spin texture details of the spin-orbit surface states that form when the bulk is terminated.
“can be determined from spin texture details of the spin-orbit surface states that form when the bulk is terminated as demonstrated by Hsieh et al . ( 6, 7 ).”
From Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator (2011) · cites this paper as [6]
The topological order in TlBi(S1-δSeδ)2 originates from Bi and Se atoms.
“Because the topological order in TlBi(S 1 -δ Se δ ) 2 originates from Bi and Se atoms and to illustrate an analogy with the known topological insulator Bi 2 Se 3 ( 6, 8, 11 )”
From Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator (2011) · cites this paper as [6]
Spins tangentially arranged on such a circular Fermi surface lead to a Berry's phase of π, which is also a measure of the topological invariant and axion angle (ν0=1=θ/π) of the system.
“Spins tangentially arranged on such a circular FS lead to a Berry's phase of π , which is also a measure of the topological invariant and the axion angle ( ν 0 = 1 = θ/π ) of the system ( 1, 4, 6 ).”
From Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator (2011) · cites this paper as [6]
Bi2Se3 has spin-polarized topological surface states.
“This is due to the fact that the topological surface states in Bi 2 Se 3 are spin polarized 8 .”
From Observation of topological order in a superconducting doped topological insulator (2010) · cites this paper as [8]
Non-magnetic disorder created via molecular absorbent NO2 or alkali atom adsorption (K or Na) on the surface leaves the Dirac node intact in both Bi2Se3 and Bi2Te3.
“Non-magnetic disorder created via molecular absorbent NO 2 or alkali atom adsorption (K or Na) on the surface leaves the Dirac node intact (Fig.5) in both Bi 2 Se 3 and Bi 2 Te 3 (33, 23).”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [23]
Detailed and systematic surface investigations of Bi2Se3, Bi2Te3, and Sb2Te3 confirmed the topological band-structure of all three of these materials.
“Subsequently, detailed and systematic surface investigations of Bi 2 Se 3 (23,29,30); Bi 2 Te 3 (31,23,32,33) and Sb 2 Te 3 (32) confirmed the topological band-structure of all 3 of these materials.”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [23]
Magnetic impurity such as Fe on the surface of Bi2Se3 opens a gap at the Dirac point.
“Magnetic impurity such as Fe on the surface of Bi 2 Se 3 opens a gap at the Dirac point (Fig.5) (22,23,38).”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [23]
The surface Fermi level of a topological insulator does not have any particular reason to sit at the Dirac point, but by a combination of surface and bulk chemical modification, tuning to the Dirac point in Bi2Se3 was demonstrated by Hsieh et al.
“The surface Fermi level of a topological insulator does not have any particular reason to sit at the Dirac point, but by a combination of surface and bulk chemical modification, tuning to the Dirac point in Bi 2 Se 3 was demonstrated by Hsieh et.al. (23).”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [23]
This was achieved by passivating the Se vacancies with Ca in the bulk to place the Fermi level within the bulk bandgap and then hole doping the surface with NO2 to keep the chemical potential at the Dirac point.
“This was achieved by passivating the Se vacancies with Ca in the bulk to place the Fermi level within the bulk bandgap and then hole doping the surface with NO 2 to keep the chemical potential at the Dirac point.”
From Three-Dimensional Topological Insulators (2011) · cites this paper as [23]
Topological insulators are a state of bulk matter with spin-momentum-locked surface states that span the bulk bandgap.
“Topological insulators embody a state of bulk matter characterized by spin-momentum-locked surface states that span the bulk bandgap 1-7 .”
From A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011) · cites this paper as [6]
Ca doping or NO2 surface deposition can place the Fermi level at the Dirac point and reach the topological transport regime.
“with Ca doping or NO 2 surface deposition the Fermi level can be placed at the Dirac point, reaching the topological transport regime 6”
From A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011) · cites this paper as [6]
The topological states of Bi2Te3 form a single Dirac cone at the center (Gamma point) of the surface Brillouin zone.
“According to the calculations [Fig. 1(d)], the topological states of Bi 2 Te 3 form a single Dirac cone at the center ( ¯ Γ point) of the SBZ [10, 11]”
From Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry (2009) · cites this paper as [11]
Bi2-yCuySe3, Cu2Se, CuBi3Se5, BiCuSe2, and BiCu3Se3 are not superconducting above 1.8 K.
“Samples of these phases, and other reported phases in the Cu-Bi-Se system, CuBiSe 2 23 and BiCu3Se3 27 as well as any compositions deviating from the stoichiometry Cu x Bi2 Se3 for 0.1 ≤ x ≤ 0.30 were not superconducting above 1.8 K”
Since spin polarization along ΓM has been found to be almost 100% polarized in ARPES, the doublet at Γ are almost pure spin eigenstates, i.e., sz ≈ <σz>.
“Since spin polarization along Γ M has been found to be almost 100% polarized in a very recent ARPES experiment[5], we conclude that the the doublet | ψ ↑ , ↓ 〉 at Γ are almost pure spin eigenstates, i.e., s z ≈ 〈 σ z 〉 , which agrees with a theoretical band structure calculation[16].”
From Hexagonal Warping Effects in the Surface States of the Topological Insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> (2009) · cites this paper as [5]
A single two-dimensional Dirac fermion state has been observed on the surface of the topological insulator Bi2Te3 by angle-resolved photoemission spectroscopy (ARPES).
“A single two-dimensinoal Dirac fermion state has been recently observed on the surface of topological insulator Bi 2 Te 3 by angle-resolved photoemission spectroscopy (ARPES).”
From Hexagonal Warping Effects in the Surface States of the Topological Insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> (2009) · cites this paper as [5]
In contrast to graphene, the remarkable property of topological edge states is that their dispersion is characterized by an odd number of nondegenerate Dirac cones.
“In contrast to graphene, which has four Dirac cones (2 doubly degenerate cones at the K and K 0 points in momentum space) [9], the remarkable property of topological edge states is that their dispersion is characterized by an odd number of nondegenerate Dirac cones.”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [6]
Topological insulators were recently proposed and shortly afterwards discovered in the Bi1-xSbx and Bi2Se3 materials.
“They were recently proposed [2-4] and shortly afterwards discovered in the Bi1 x Sb x [5,6] and Bi2 Se 3 [7,8] materials.”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [6]
The intensity is strongest near the Dirac node and drastically weakens away from Gamma as the surface band merges with the bulk bands and becomes short-lived.
“which corroborates our experimental finding that the intensity is strongest near the Dirac node and drastically weakens away from as the surface band merges with the bulk bands and become short-lived [5,6,28].”
From Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3 (2009) · cites this paper as [6]
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Ca-doped sample is called both most insulating and most metallic-like
MinorThe Figure 2 caption gives opposite descriptions of Bi 1 . 9975 Ca 0 . 0025 Se 3 relative to the topological-insulator classes being compared.
“The stoichiometric Bi 2 Se 3 (Bi 1 . 9975 Ca 0 . 0025 Se 3 ) is found to be the most insulating of these topological insulators.”
“Bi 1 . 9975 Ca 0 . 0025 Se 3 is known to be most metallic-like among the three classes studied so far.”
Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824 · see citing works
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979 · see citing works
Quantum Spin Hall Insulator State in HgTe Quantum Wells
König, M., Wiedmann, S., Brüne, C., Roth, A., Buhmann, H., Molenkamp, L. W., Qi, X.-L., & Zhang, S.-C. (2007) · Science · doi:10.1126/science.1148047 · Cited by 6,151 · see citing works
Topological Insulators in Three Dimensions
Fu, L., Kane, C. L., & Mele, E. J. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.106803 · Cited by 4,651 · see citing works
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., et al. (2009) · Nature Physics · doi:10.1038/nphys1274 · Cited by 3,765 · see citing works
Self-citationA topological Dirac insulator in a quantum spin Hall phase
Hsieh, D., Qian, D., Wray, L., Xia, Y., Hor, Y. S., Cava, R. J., & Hasan, M. Z. (2008) · Nature · doi:10.1038/nature06843 · Cited by 3,523 · see citing works
Self-citationHüfner, S. (1995) · Springer Series in Solid-State Sciences · doi:10.1007/978-3-662-03150-6 · Cited by 854 · see citing works
Hor, Y. S., Richardella, A., Roushan, P., Xia, Y., Checkelsky, J. G., Yazdani, A., Hasan, M. Z., Ong, N. P., & Cava, R. J. (2009) · Physical Review B · doi:10.1103/physrevb.79.195208 · Cited by 647 · see citing works
Self-citationProbing Neutral Majorana Fermion Edge Modes with Charge Transport
Fu, L., & Kane, C. L. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.216403 · Cited by 566 · see citing works
Exciton Condensation and Charge Fractionalization in a Topological Insulator Film
Seradjeh, B., Moore, J. E., & Franz, M. (2009) · Physical Review Letters · doi:10.1103/physrevlett.103.066402 · Cited by 267 · see citing works
Spin-polarized Fermi surface mapping
Hoesch, M., Greber, T., Petrov, V. N., Muntwiler, M., Hengsberger, M., Auwärter, W., & Osterwalder, J. (2002) · Journal of Electron Spectroscopy and Related Phenomena · doi:10.1016/s0368-2048(02)00058-0 · Cited by 151 · see citing works
Self-citationUrazhdin, S., Bilc, D., Mahanti, S. D., Tessmer, S. H., Kyratsi, T., & Kanatzidis, M. G. (2004) · Physical Review B · doi:10.1103/physrevb.69.085313 · Cited by 122 · see citing works
Thomas, G. A., Rapkine, D. H., Van Dover, R. B., Mattheiss, L. F., Sunder, W. A., Schneemeyer, L. F., & Waszczak, J. V. (1992) · Physical Review B · doi:10.1103/physrevb.46.1553 · Cited by 100 · see citing works
Flagged first, then by citations
Research works printed but not linked: 22
- Day, C. Exotic spin textures show up in diverse materials. Phys. Today 62, 12–13 (2009)
- Moore, J. E. Topological insulators: the next generation. Nature Phys. 5, 378–380 (2009) · DOI · Paper page
- Qi, X.-L., Hughes, T. L. & Zhang, S.-C. Topological field theory of time-reversal invariant insulators. Phys. Rev. B 78, 195424 (2008) · DOI · Paper page
- Schnyder, A. P. et al. Classification of topological insulators and superconductors. Phys. Rev. B 78, 195125 (2008) · DOI · Paper page
- Essin, A., Moore, J. E. & Vanderbilt, D. Magnetoelectric polarizability and axion electrodynamics in crystalline insulators. Phys. Rev. Lett. 102, 146805 (2009) · DOI · Paper page
- Akhmerov, A. R., Nilsson, J. & Beenakker, C. W. J. Electrically detected interferometry of Majorana fermions in a topological insulator. Phys. Rev. Lett. 102, 216404 (2009) · DOI · Paper page
- Li, L. et al. Phase transitions of Dirac electrons in bismuth. Science 321, 547–550 (2008) · DOI · Paper page
- Moore, J. E. & Balents, L. Topological invariants of time-reversal-invariant band structures. Phys. Rev. B 75, 121306(R) (2007) · DOI · Paper page
- Hsieh, D. et al. Observation of unconventional quantum spin textures in topological insulators. Science 323, 919–922 (2009) · DOI · Paper page
- Noh, H.-J. et al. Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy. Europhys. Lett. 81, 57006 (2008) · DOI · Paper page
- Nishide, A. et al. Direct mapping of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator. Preprint at 〈 http://arxiv.org/abs/0902.2251 〉 (2009) · DOI
- Checkelsky, J. G., Li, L. & Ong, N. P. Divergent resistance of the Dirac point in graphene: evidence for a transition in high magnetic field. Phys. Rev. B 79, 115434 (2009) · DOI
- Zhang, H. et al. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nature Phys. 5, 438–442 (2009) · DOI · Paper page
- Meier, F., Dil, J. H., Lobo-Checa, J., Patthey, L. & Osterwalder, J. Quantitative vectorial spin analysis in angle-resolved photoemission: Bi/Ag(111) and Pb/Ag(111). Phys. Rev. B 77, 165431 (2008) · DOI
- Larson, P. et al. Electronic structure of Bi2X3 (X = S, Se, T) compounds: comparison of theoretical calculations with photoemission studies. Phys. Rev. B 65, 085108 (2001) · DOI · Paper page
- Mishra, S. K., Satpathy, S. & Jepsen, O. Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide. J. Phys. Condens. Matter 9, 461–470 (1997) · DOI · Paper page
- Black, J., Conwell, E. M., Seigle, L. & Spencer, C. W. Electrical and optical properties of some M2 V-BN3 VI-B semiconductors. J. Phys. Chem. Solids 2, 240–251 (1957) · DOI · Paper page
- Zhou, S. et al. Metal to insulator transition in epitaxial graphene induced by molecular doping. Phys. Rev. Lett. 101, 086402 (2008) · DOI
- Schedin, F. et al. Detection of individual gas molecules adsorbed on graphene. Nature Mater. 6, 652–655 (2007) · DOI · Paper page
- Wilczek, F. Remarks on dyons. Phys. Rev. Lett. 48, 1146–1149 (1982) · DOI
- Blaha, P. et al. Computer Code WIEN2k (Vienna University of Technology, 2001)
- Wang, G. & Cagin, T. Electronic structure of the thermoelectric materials Bi2Te3 and Sb2Te3 from first-principles calculations. Phys. Rev. B 76, 075201 (2007) · DOI
Cited by
Sorted by citations
<i>Colloquium</i> : Topological insulators
Hasan, M. Z., & Kane, C. L. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.3045 · Cited by 19,930 · see citing works
Self-citationTopological insulators and superconductors
Qi, X.-L., & Zhang, S.-C. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.1057 · Cited by 14,394 · see citing works
<i>Colloquium</i> : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587 · see citing works
Self-citationHor, Y. S., Williams, A. J., Checkelsky, J. G., Roushan, P., Seo, J., Xu, Q., Zandbergen, H. W., Yazdani, A., Ong, N. P., & Cava, R. J. (2010) · Physical Review Letters · doi:10.1103/physrevlett.104.057001 · Cited by 1,028 · see citing works
Self-citationExperimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry
Zhang, T., Cheng, P., Chen, X., Jia, J.-F., Ma, X., He, K., Wang, L., Zhang, H., Dai, X., Fang, Z., et al. (2009) · Physical Review Letters · doi:10.1103/physrevlett.103.266803 · Cited by 744 · see citing works
Lin, H., Wray, L. A., Xia, Y., Xu, S., Jia, S., Cava, R. J., Bansil, A., & Hasan, M. Z. (2010) · Nature Materials · doi:10.1038/nmat2771 · Cited by 736 · see citing works
Self-citationXu, S.-Y., Liu, C., Alidoust, N., Neupane, M., Qian, D., Belopolski, I., Denlinger, J. D., Wang, Y. J., Lin, H., Wray, L. A., et al. (2012) · Nature Communications · doi:10.1038/ncomms2191 · Cited by 691 · see citing works
Self-citationControl over topological insulator photocurrents with light polarization
McIver, J. W., Hsieh, D., Steinberg, H., Jarillo-Herrero, P., & Gedik, N. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2011.214 · Cited by 647 · see citing works
Self-citationMassive Dirac fermions and spin physics in an ultrathin film of topological insulator
Lu, H.-Z., Shan, W.-Y., Yao, W., Niu, Q., & Shen, S.-Q. (2010) · Physical Review B · doi:10.1103/physrevb.81.115407 · Cited by 607 · see citing works
Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator
Xu, S.-Y., Xia, Y., Wray, L. A., Jia, S., Meier, F., Dil, J. H., Osterwalder, J., Slomski, B., Bansil, A., Lin, H., et al. (2011) · Science · doi:10.1126/science.1201607 · Cited by 461 · see citing works
Self-citationObservation of topological order in a superconducting doped topological insulator
Wray, L. A., Xu, S.-Y., Xia, Y., Hor, Y. S., Qian, D., Fedorov, A. V., Lin, H., Bansil, A., Cava, R. J., & Hasan, M. Z. (2010) · Nature Physics · doi:10.1038/nphys1762 · Cited by 464 · see citing works
Self-citationWeyl Node and Spin Texture in Trigonal Tellurium and Selenium
Hirayama, M., Okugawa, R., Ishibashi, S., Murakami, S., & Miyake, T. (2015) · Physical Review Letters · doi:10.1103/physrevlett.114.206401 · Cited by 281 · see citing works
Aharonov-Bohm oscillations in disordered topological insulator nanowires.
Bardarson, J. H., Brouwer, P. W., & Moore, J. E. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.156803 · Cited by 220 · see citing works
Principles of spintronic THz emitters
Wu, W., Yaw Ameyaw, C., Doty, M. F., & Jungfleisch, M. B. (2021) · Journal of Applied Physics · doi:10.1063/5.0057536 · Cited by 84 · see citing works
Shift charge and spin photocurrents in Dirac surface states of topological insulator
Kim, K. W., Morimoto, T., & Nagaosa, N. (2017) · Physical Review B · doi:10.1103/physrevb.95.035134 · Cited by 79 · see citing works
Tong, M., Hu, Y., Wang, Z., Zhou, T., Xie, X., Cheng, X., & Jiang, T. (2021) · Nano Letters · doi:10.1021/acs.nanolett.0c03079 · Cited by 58 · see citing works
- Authors
- Hsieh, D., Xia, Y., Qian, D., Wray, L., Dil, J. H., Meier, F., Osterwalder, J., Patthey, L., Checkelsky, J. G., Ong, N. P., Fedorov, A. V., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., & Hasan, M. Z.
- Affiliations
- Princeton University (US)
- Shanghai Jiao Tong University (CN)
- University of Zurich (CH)
- Paul Scherrer Institute (CH)
- Lawrence Berkeley National Laboratory (US)
- Northeastern University (US)
- Corresponding author
- Hasan, M. Z.
- ORCID
- Venue
- Nature
- Published
- 2009-07-20
- Volume
- 460
- Issue
- 7259
- Pages
- 1101-1105
- ISSN
- 0028-0836 (ISSN-L)
- 1476-4687
- OpenAlex
- W1589359576
- Cited by
- 1,979
- References
- 13
- Citations by year
- 2026: 46 · 2025: 58 · 2024: 65 · 2023: 77 · 2022: 88 · 2021: 99 · 2020: 126 · 2019: 95 · 2018: 127 · 2017: 148 · 2016: 153 · 2015: 153 · 2014: 160 · 2013: 174 · 2012: 174
- FWCI
- 76.08
- Type
- journal article
- Language
- en
- Open access
- green
- www.zora.uzh.ch
- Licence
- other-oa
- www.springer.com/tdm (tdm)
- Locations
- Nature (publishedVersion)
- PubMed (publishedVersion)
- Zurich Open Repository and Archive (University of Zurich) (acceptedVersion, other-oa)
- arXiv (Cornell University) (submittedVersion)
- CaltechAUTHORS (California Institute of Technology) (submittedVersion)
- RePEc: Research Papers in Economics (submittedVersion)
- DORA PSI (Paul Scherrer Institute) (submittedVersion)
- Zurich Open Repository and Archive (University of Zurich) (submittedVersion, other-oa)
- Zurich Open Repository and Archive (University of Zurich)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
- Keywords
- topological insulators, bismuth, spin polarization, spin-orbit coupling, topological transport, spintronics, surface states, time-reversal symmetry, relativistic electrons, magnetoelectric coupling, charge fractionalization, Bose-Einstein condensate
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Claims read by deepseek-v4.1-flash under definition version 3 (extract-v3) on 2026-10-06.
Classified by jev-1.13-20260917 (gold-guideline-v0.2) on 2026-10-06.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review