The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons
Open accessAbstract
A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×1011 cm−2. The zinc oxide-capped, antimony-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. The singular properties of topological insulators are defined by the topological nature of their metallic surface states. This study shows that by doping Bi2Se3nanoribbons with antimony, the transport properties of these surface states are measurable and can be distinguished from the contributions due to the bulk of the samples.
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Cites
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Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Self-citationTopological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Metadata
- Authors
- Hong, S. S., Cha, J. J., Kong, D., & Cui, Y.
- Venue
- Nature Communications
- Published
- 2012-03-27
- Volume
- 3
- Issue
- 1
- Pages
- 757-757
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2003015224
- Cited by
- 237
- References
- 13
- FWCI
- 17.94
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Hong, S. S., Cha, J. J., Kong, D., & Cui, Y. (2012). Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons. Nature Communications. https://doi.org/10.1038/ncomms1771
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