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Non-volatile memory based on the ferroelectric photovoltaic effect
Open accessAbstract
The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. Ferroelectric RAM is considered a promising candidate on the quest for a universal memory, but the concept is still problem prone. Here, the authors use the ferroelectric photovoltaic effect as a non-destructive read-out method for a new prototype memory, which shows good data retention and fatigue resistance.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Cited by
Giant switchable photovoltaic effect in organometal trihalide perovskite devices
Xiao, Z., Yuan, Y., Shao, Y., Wang, Q., Dong, Q., Bi, C., Sharma, P., Gruverman, A., & Huang, J. (2015) · Nature Materials · doi:10.1038/nmat4150 · Cited by 1,625
Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
Dong, S., Liu, J.-M., Cheong, S.-W., & Ren, Z. (2015) · Advances in Physics · doi:10.1080/00018732.2015.1114338 · Cited by 893
BiFeO3epitaxial thin films and devices: past, present and future
Sando, D., Barthélémy, A., & Bibes, M. (2014) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/26/47/473201 · Cited by 353
Room‐Temperature Nonvolatile Memory Based on a Single‐Phase Multiferroic Hexaferrite
Zhai, K., Shang, D., Chai, Y., Li, G., Cai, J., Shen, B., & Sun, Y. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201705771 · Cited by 102
Quick screening stable double perovskite oxides for photovoltaic applications by machine learning
Liu, H., Feng, J., & Dong, L. (2022) · Ceramics International · doi:10.1016/j.ceramint.2022.02.258 · Cited by 29
Metadata
- Authors
- Guo, R., You, L., Zhou, Y., Shiuh Lim, Z., Zou, X., Chen, L., Ramesh, R., & Wang, J.
- Venue
- Nature Communications
- Published
- 2013-06-11
- Volume
- 4
- Issue
- 1
- Pages
- 1990-1990
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2070934612
- Cited by
- 507
- References
- 2
- FWCI
- 22.17
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Guo, R., You, L., Zhou, Y., Shiuh Lim, Z., Zou, X., Chen, L., Ramesh, R., & Wang, J. (2013). Non-volatile memory based on the ferroelectric photovoltaic effect. Nature Communications. https://doi.org/10.1038/ncomms2990
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