The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Non-volatile memory based on the ferroelectric photovoltaic effect
Open accessAbstract
The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. Ferroelectric RAM is considered a promising candidate on the quest for a universal memory, but the concept is still problem prone. Here, the authors use the ferroelectric photovoltaic effect as a non-destructive read-out method for a new prototype memory, which shows good data retention and fatigue resistance.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures
Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., et al. (2003) · Science · doi:10.1126/science.1080615 · Cited by 6,217
Self-citationNanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Phase-change materials for rewriteable data storage
Wuttig, M., & Yamada, N. (2007) · Nature Materials · doi:10.1038/nmat2009 · Cited by 3,655
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
The emergence of spin electronics in data storage
Chappert, C., Fert, A., & Van Dau, F. N. (2007) · Nature Materials · doi:10.1038/nmat2024 · Cited by 2,546
Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3
Choi, T., Lee, S., Choi, Y. J., Kiryukhin, V., & Cheong, S.-W. (2009) · Science · doi:10.1126/science.1168636 · Cited by 1,984
Above-bandgap voltages from ferroelectric photovoltaic devices
Yang, S. Y., Seidel, J., Byrnes, S. J., Shafer, P., Yang, C.-H., Rossell, M. D., Yu, P., Chu, Y.-H., Scott, J. F., Ager, J. W., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.451 · Cited by 1,812
Self-citationUnderstanding the phase-change mechanism of rewritable optical media
Kolobov, A. V., Fons, P., Frenkel, A. I., Ankudinov, A. L., Tominaga, J., & Uruga, T. (2004) · Nature Materials · doi:10.1038/nmat1215 · Cited by 1,313
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
Garcia, V., Fusil, S., Bouzehouane, K., Enouz-Vedrenne, S., Mathur, N. D., Barthélémy, A., & Bibes, M. (2009) · Nature · doi:10.1038/nature08128 · Cited by 945
Solid-state memories based on ferroelectric tunnel junctions
Chanthbouala, A., Crassous, A., Garcia, V., Bouzehouane, K., Fusil, S., Moya, X., Allibe, J., Dlubak, B., Grollier, J., Xavier, S., et al. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2011.213 · Cited by 628
Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films
Ji, W., Yao, K., & Liang, Y. C. (2010) · Advanced Materials · doi:10.1002/adma.200902985 · Cited by 595
Åkerman, J. (2005) · Science · doi:10.1126/science.1110549 · Cited by 522
Ferroelastic switching for nanoscale non-volatile magnetoelectric devices
Baek, S. H., Jang, H. W., Folkman, C. M., Li, Y. L., Winchester, B., Zhang, J. X., He, Q., Chu, Y. H., Nelson, C. T., Rzchowski, M. S., et al. (2010) · Nature Materials · doi:10.1038/nmat2703 · Cited by 492
Self-citationMechanism of the Switchable Photovoltaic Effect in Ferroelectric BiFeO3
Yi, H. T., Choi, T., Choi, S. G., Oh, Y. S., & Cheong, S. ‐. (2011) · Advanced Materials · doi:10.1002/adma.201100805 · Cited by 440
Optical band gap of BiFeO3 grown by molecular-beam epitaxy
Ihlefeld, J. F., Podraza, N. J., Liu, Z. K., Rai, R. C., Xu, X., Heeg, T., Chen, Y. B., Li, J., Collins, R. W., Musfeldt, J. L., et al. (2008) · Applied Physics Letters · doi:10.1063/1.2901160 · Cited by 384
Self-citationEvidences for the depletion region induced by the polarization of ferroelectric semiconductors
Yuan, G., & Wang, J. (2009) · Applied Physics Letters · doi:10.1063/1.3268783 · Cited by 84
Self-citation
Cited by
Giant switchable photovoltaic effect in organometal trihalide perovskite devices
Xiao, Z., Yuan, Y., Shao, Y., Wang, Q., Dong, Q., Bi, C., Sharma, P., Gruverman, A., & Huang, J. (2015) · Nature Materials · doi:10.1038/nmat4150 · Cited by 1,625
Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
Dong, S., Liu, J.-M., Cheong, S.-W., & Ren, Z. (2015) · Advances in Physics · doi:10.1080/00018732.2015.1114338 · Cited by 893
BiFeO3epitaxial thin films and devices: past, present and future
Sando, D., Barthélémy, A., & Bibes, M. (2014) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/26/47/473201 · Cited by 353
Room‐Temperature Nonvolatile Memory Based on a Single‐Phase Multiferroic Hexaferrite
Zhai, K., Shang, D., Chai, Y., Li, G., Cai, J., Shen, B., & Sun, Y. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201705771 · Cited by 102
Quick screening stable double perovskite oxides for photovoltaic applications by machine learning
Liu, H., Feng, J., & Dong, L. (2022) · Ceramics International · doi:10.1016/j.ceramint.2022.02.258 · Cited by 29
Metadata
- Authors
- Guo, R., You, L., Zhou, Y., Shiuh Lim, Z., Zou, X., Chen, L., Ramesh, R., & Wang, J.
- Venue
- Nature Communications
- Published
- 2013-06-11
- Volume
- 4
- Issue
- 1
- Pages
- 1990-1990
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2070934612
- Cited by
- 507
- References
- 16
- FWCI
- 22.17
- Type
- journal article
- Language
- en
- Open access
- hybrid
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.