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Single-photon emitting diode in silicon carbide
Open accessAbstract
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing. Single-photon emitters are required for quantum cryptography and computation and single-photon metrology. Here, Lohrmannet al. fabricate electrically driven, single-photon emitting diodes in silicon carbide with a fully polarized output, high emission rates and stability at room temperature.
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Cites
Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency
Heindel, T., Schneider, C., Lermer, M., Kwon, S. H., Braun, T., Reitzenstein, S., Höfling, S., Kamp, M., & Forchel, A. (2010) · Applied Physics Letters · doi:10.1063/1.3284514 · Cited by 205
Cited by
Solid-state single-photon emitters
Aharonovich, I., Englund, D., & Toth, M. (2016) · Nature Photonics · doi:10.1038/nphoton.2016.186 · Cited by 1,786
Material platforms for spin-based photonic quantum technologies
Atatüre, M., Englund, D., Vamivakas, N., Lee, S.-Y., & Wrachtrup, J. (2018) · Nature Reviews Materials · doi:10.1038/s41578-018-0008-9 · Cited by 766
Atomically thin quantum light-emitting diodes
Palacios-Berraquero, C., Barbone, M., Kara, D. M., Chen, X., Goykhman, I., Yoon, D., Ott, A. K., Beitner, J., Watanabe, K., Taniguchi, T., et al. (2016) · Nature Communications · doi:10.1038/ncomms12978 · Cited by 334
Scalable quantum photonics with single color centers in silicon carbide
Radulaski, M., Widmann, M., Niethammer, M., Zhang, J. L., Lee, S.-Y., Rendler, T., Lagoudakis, K. G., Son, N. T., Janzén, E., Ohshima, T., et al. (2017) · Nano Letters · doi:10.1021/acs.nanolett.6b05102 · Cited by 202
Self-citationOptical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology
Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. U., Son, N. T., Fromherz, T., Gali, A., & Trupke, M. (2019) · Physical Review Applied · doi:10.1103/physrevapplied.12.014015 · Cited by 82
Metadata
- Authors
- Lohrmann, A., Iwamoto, N., Bodrog, Z., Castelletto, S., Ohshima, T., Karle, T. J., Gali, A., Prawer, S., McCallum, J. C., & Johnson, B. C.
- Venue
- Nature Communications
- Published
- 2015-07-23
- Volume
- 6
- Issue
- 1
- Pages
- 7783-7783
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W836980279
- Cited by
- 217
- References
- 1
- FWCI
- 8.79
- Type
- journal article
- Language
- en
- Open access
- gold
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- Lohrmann, A., Iwamoto, N., Bodrog, Z., Castelletto, S., Ohshima, T., Karle, T. J., Gali, A., Prawer, S., McCallum, J. C., & Johnson, B. C. (2015). Single-photon emitting diode in silicon carbide. Nature Communications. https://doi.org/10.1038/ncomms8783
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