Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology
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Light emission stemming from V impurities in $4H$-SiC is recorded at 1.28 and 1.33 $\ensuremath{\mu}$m, in the telecommunication $O$ band, which gives hope for the creation of efficient single-photon sources in existing telecommunication networks, ultimately paving the way for secure long-range quantum communication networks. Combined with the available electronic and nuclear degrees of freedom, vanadium presents all of the required ingredients for a highly efficient spin-photon interface. These V centers are reminiscent of the Mo defect in SiC and the Si-$V$ complex in diamond, but work at practical wavelengths for telecommunication.
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Emerging SiC color centers, such as the NV and the vanadium center, are currently explored in the range 1300-1550 nm.
“While Si vacancy and divacancy in 4H-SiC provide longer operating wavelengths than diamond defects and QDs, emerging SiC color centers, such as the NV [128, 129] and the vanadium center [130], are currently explored in the range 1300-1550 nm.”
From 2022 Roadmap on integrated quantum photonics (2022) · cites this paper as [130]
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Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824 · see citing works
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652 · see citing works
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732 · see citing works
Hybrid functionals based on a screened Coulomb potential
Heyd, J., Scuseria, G. E., & Ernzerhof, M. (2003) · The Journal of Chemical Physics · doi:10.1063/1.1564060 · Cited by 19,629 · see citing works
Electromagnetically induced transparency: Optics in coherent media
Fleischhauer, M., Imamoglu, A., & Marangos, J. P. (2005) · Reviews of Modern Physics · doi:10.1103/revmodphys.77.633 · Cited by 5,189 · see citing works
First-principles calculations for point defects in solids
Freysoldt, C., Grabowski, B., Hickel, T., Neugebauer, J., Kresse, G., Janotti, A., & de Walle, C. G. V. (2014) · Reviews of Modern Physics · doi:10.1103/revmodphys.86.253 · Cited by 3,046 · see citing works
The nitrogen-vacancy colour centre in diamond
Doherty, M. W., Manson, N. B., Delaney, P., Jelezko, F., Wrachtrup, J., & Hollenberg, L. C. L. (2013) · Physics Reports · doi:10.1016/j.physrep.2013.02.001 · Cited by 2,866 · see citing works
Nanometre-scale thermometry in a living cell
Kucsko, G., Maurer, P. C., Yao, N. Y., Kubo, M., Noh, H. J., Lo, P. K., Park, H., & Lukin, M. D. (2013) · Nature · doi:10.1038/nature12373 · Cited by 1,961 · see citing works
Single-shot read-out of an individual electron spin in a quantum dot
Elzerman, J. M., Hanson, R., van Beveren, L. H. W., Witkamp, B., Vandersypen, L. M. K., & Kouwenhoven, L. P. (2004) · Nature · doi:10.1038/nature02693 · Cited by 1,685 · see citing works
Magnetometry with nitrogen-vacancy defects in diamond
Rondin, L., Tetienne, J., Hingant, T., Roch, J.-F., Maletinsky, P., & Jacques, V. (2014) · Reports on Progress in Physics · doi:10.1088/0034-4885/77/5/056503 · Cited by 1,361 · see citing works
Electric-field sensing using single diamond spins
Dolde, F., Fedder, H., Doherty, M. W., Nöbauer, T., Rempp, F., Balasubramanian, G., Wolf, T., Reinhard, F., Hollenberg, L. C. L., Jelezko, F., et al. (2011) · Nature Physics · doi:10.1038/nphys1969 · Cited by 1,340 · see citing works
High-performance semiconductor quantum-dot single-photon sources
Senellart, P., Solomon, G. S., & White, A. G. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.218 · Cited by 1,275 · see citing works
An integrated diamond nanophotonics platform for quantum-optical networks
Sipahigil, A., Evans, R. E., Sukachev, D. D., Burek, M. J., Borregaard, J., Bhaskar, M. K., Nguyen, C. T., Pacheco, J. L., Atikian, H. A., Meuwly, C., et al. (2016) · Science · doi:10.1126/science.aah6875 · Cited by 844 · see citing works
Quantum computing with defects
Weber, J. R., Koehl, W. F., Varley, J. B., Janotti, A., Buckley, B. B., de Walle, C. G. V., & Awschalom, D. D. (2010) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1003052107 · Cited by 816 · see citing works
High-Precision Nanoscale Temperature Sensing Using Single Defects in Diamond
Neumann, P., Jakobi, I., Dolde, F., Burk, C., Reuter, R., Waldherr, G., Honert, J., Wolf, T., Brunner, A., Shim, J. H., et al. (2013) · Nano Letters · doi:10.1021/nl401216y · Cited by 795 · see citing works
Material platforms for spin-based photonic quantum technologies
Atatüre, M., Englund, D., Vamivakas, N., Lee, S.-Y., & Wrachtrup, J. (2018) · Nature Reviews Materials · doi:10.1038/s41578-018-0008-9 · Cited by 766 · see citing works
Coherent control of single spins in silicon carbide at room temperature
Widmann, M., Lee, S., Rendler, T., Són, N. T., Fedder, H., Paik, S., Yang, L., Zhao, N., Yang, S., Booker, I. D., et al. (2014) · Nature Materials · doi:10.1038/nmat4145 · Cited by 670 · see citing works
A silicon carbide room-temperature single-photon source
Castelletto, S., Johnson, B. C., Ivády, V., Stavrias, N., Umeda, T., Gali, Á., & Ohshima, T. (2013) · Nature Materials · doi:10.1038/nmat3806 · Cited by 593 · see citing works
Isolated electron spins in silicon carbide with millisecond coherence times
Christle, D. J., Falk, A. L., Andrich, P., Klimov, P. V., Ul‐Hassan, J., Són, N. T., Janzén, E., Ohshima, T., & Awschalom, D. D. (2014) · Nature Materials · doi:10.1038/nmat4144 · Cited by 515 · see citing works
Strong Purcell effect for InAs quantum boxes in three-dimensional solid-state microcavities
Gérard, J., & Gayral, B. (1999) · Journal of Lightwave Technology · doi:10.1109/50.802999 · Cited by 446 · see citing works
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
Deák, P., Aradi, B., Frauenheim, T., Janzén, E., & Gali, Á. (2010) · Physical Review B · doi:10.1103/physrevb.81.153203 · Cited by 414 · see citing works
Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
Saeedi, K., Simmons, S., Salvail, J. Z., Dluhy, P., Riemann, H. P., Abrosimov, N. V., Becker, P., Pohl, H.-J., Morton, J. J. L., & Thewalt, M. L. W. (2013) · Science · doi:10.1126/science.1239584 · Cited by 394 · see citing works
Alkauskas, A., Buckley, B. B., Awschalom, D. D., & de Walle, C. G. V. (2014) · New Journal of Physics · doi:10.1088/1367-2630/16/7/073026 · Cited by 333 · see citing works
The commercialization of silicon photonics
Rickman, A. G. (2014) · Nature Photonics · doi:10.1038/nphoton.2014.175 · Cited by 318 · see citing works
Theory of Spin-Conserving Excitation of the N − V − Center in Diamond
Gali, Á., Janzén, E., Deák, P., Kresse, G., & Kaxiras, E. (2009) · Physical Review Letters · doi:10.1103/physrevlett.103.186404 · Cited by 301 · see citing works
Fuchs, F., Stender, B., Trupke, M., Simin, D., Pflaum, J., Dyakonov, V., & Astakhov, G. V. (2015) · Nature Communications · doi:10.1038/ncomms8578 · Cited by 253 · see citing works
Self-citationEfficient Readout of a Single Spin State in Diamond via Spin-to-Charge Conversion
Shields, B., Unterreithmeier, Q. P., de Leon, N. P., Park, H., & Lukin, M. D. (2015) · Physical Review Letters · doi:10.1103/physrevlett.114.136402 · Cited by 242 · see citing works
Electronic structure of the negatively charged silicon-vacancy center in diamond
Rogers, L. J., Jahnke, K. D., Doherty, M. W., Dietrich, A., McGuinness, L. P., Müller, C., Teraji, T., Sumiya, H., Isoya, J., Manson, N. B., et al. (2014) · Physical Review B · doi:10.1103/physrevb.89.235101 · Cited by 227 · see citing works
Nickerson, N., Fitzsimons, J. F., & Benjamin, S. C. (2014) · Physical Review X · doi:10.1103/physrevx.4.041041 · Cited by 222 · see citing works
Single-photon emitting diode in silicon carbide
Lohrmann, A., Iwamoto, N., Bodrog, Z., Castelletto, S., Ohshima, T., Karle, T. J., Gali, Á., Prawer, S., McCallum, J. C., & Johnson, B. C. (2015) · Nature Communications · doi:10.1038/ncomms8783 · Cited by 219 · see citing works
Photonic Architecture for Scalable Quantum Information Processing in Diamond
Nemoto, K., Trupke, M., Devitt, S. J., Stephens, A. M., Scharfenberger, B., Buczak, K., Nöbauer, T., Everitt, M. S., Schmiedmayer, J., & Munro, W. J. (2014) · Physical Review X · doi:10.1103/physrevx.4.031022 · Cited by 213 · see citing works
Self-citationSiyushev, P., Nesládek, M., Bourgeois, E., Gulka, M., Hrubý, J., Yamamoto, T., Trupke, M., Teraji, T., Isoya, J., & Jelezko, F. (2019) · Science · doi:10.1126/science.aav2789 · Cited by 194 · see citing works
Self-citationOptically Generated 2-Dimensional Photonic Cluster State from Coupled Quantum Dots
Economou, S. E., Lindner, N. H., & Rudolph, T. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.093601 · Cited by 158 · see citing works
Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
Schneider, J., Müller, H. D., Maier, K., Wilkening, W., Fuchs, F., Dörnen, A., Leibenzeder, S., & Stein, R. A. (1990) · Applied Physics Letters · doi:10.1063/1.102555 · Cited by 153 · see citing works
Generalized Koopmans density functional calculations reveal the deep acceptor state of NO in ZnO
Lany, S., & Zunger, A. (2010) · Physical Review B · doi:10.1103/physrevb.81.205209 · Cited by 148 · see citing works
Ultrafast all-optical coherent control of single silicon vacancy colour centres in diamond
Becker, J. N., Görlitz, J., Arend, C., Markham, M., & Becher, C. (2016) · Nature Communications · doi:10.1038/ncomms13512 · Cited by 140 · see citing works
Bracher, D. O., Zhang, X., & Hu, E. L. (2017) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1704219114 · Cited by 124 · see citing works
Simin, D., Soltamov, V. A., Poshakinskiy, A. V., Anisimov, A. N., Babunts, R. A., Tolmachev, D. O., Mokhov, E. N., Trupke, M., Tarasenko, S. A., Sperlich, A., et al. (2016) · Physical Review X · doi:10.1103/physrevx.6.031014 · Cited by 121 · see citing works
Self-citationCavity-Enhanced Single-Photon Source Based on the Silicon-Vacancy Center in Diamond
Benedikter, J., Kaupp, H., Hümmer, T., Liang, Y., Bommer, A., Becher, C., Krueger, A., Smith, J. M., Hänsch, T. W., & Hunger, D. (2017) · Physical Review Applied · doi:10.1103/physrevapplied.7.024031 · Cited by 109 · see citing works
A photonic platform for donor spin qubits in silicon
Morse, K. J., Abraham, R. J. S., DeAbreu, A., Bowness, C., Richards, T. S., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H.-J., Thewalt, M. L. W., et al. (2017) · Science Advances · doi:10.1126/sciadv.1700930 · Cited by 105 · see citing works
Optical manipulation of the Berry phase in a solid-state spin qubit
Yale, C. G., Heremans, F. J., Zhou, B. B., Auer, A., Burkard, G., & Awschalom, D. D. (2016) · Nature Photonics · doi:10.1038/nphoton.2015.278 · Cited by 104 · see citing works
Accurate and Robust Unitary Transformations of a High-Dimensional Quantum System
Anderson, B. E., Martinez, H. S., Riofrío, C. A., Deutsch, I., & Jessen, P. (2015) · Physical Review Letters · doi:10.1103/physrevlett.114.240401 · Cited by 93 · see citing works
Fabry-Perot microcavity for diamond-based photonics
Janitz, E., Ruf, M., Dimock, M., Bourassa, A., Sankey, J. C., & Childress, L. (2015) · Physical Review A · doi:10.1103/physreva.92.043844 · Cited by 91 · see citing works
Protecting a Diamond Quantum Memory by Charge State Control
Pfender, M., Aslam, N., Simon, P., Antonov, D., Thiering, G., Burk, S., de Oliveira, F. F., Denisenko, A., Fedder, H., Meijer, J., et al. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b01796 · Cited by 91 · see citing works
Self-citationResonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
Koehl, W. F., Kovos, B., Whiteley, S. J., Bourassa, A., Són, N. T., Janzén, E., & Awschalom, D. D. (2017) · Physical review. B./Physical review. B · doi:10.1103/physrevb.95.035207 · Cited by 90 · see citing works
Optical properties of an ensemble of G-centers in silicon
Beaufils, C., Redjem, W., Rousseau, E., Jacques, V., Kuznetsov, A. Y., Raynaud, C., Voisin, C., Benali, A., Herzig, T., Pezzagna, S., et al. (2018) · Physical review. B./Physical review. B · doi:10.1103/physrevb.97.035303 · Cited by 86 · see citing works
Properties of the D1 bound exciton in 4H−SiC
Egilsson, T., Bergman, J. P., Ivanov, I. G., Henry, A., & Janzén, E. (1999) · Physical review. B, Condensed matter · doi:10.1103/physrevb.59.1956 · Cited by 82 · see citing works
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Bosma, T., Lof, G. J. J., Gilardoni, C. M., Zwier, O. V., Hendriks, F., Magnusson, B., Ellison, A., Gällström, A., Ivanov, I. G., Son, N. T., et al. (2018) · npj Quantum Information · doi:10.1038/s41534-018-0097-8 · Cited by 70 · see citing works
Self-citationSilicon microcavity arrays with open access and a finesse of half a million
Wachter, G., Kühn, S., Minniberger, S., Salter, C. L., Asenbaum, P., Millen, J., Schneider, M., Schalko, J., Schmid, U., Felgner, A., et al. (2019) · Light Science & Applications · doi:10.1038/s41377-019-0145-y · Cited by 69 · see citing works
Self-citationHargart, F., Kessler, C., Schwarzbäck, T., Koroknay, E., Weidenfeld, S., Jetter, M., & Michler, P. (2013) · Applied Physics Letters · doi:10.1063/1.4774392 · Cited by 66 · see citing works
Theoretical unification of hybrid-DFT and DFT + U methods for the treatment of localized orbitals
Ivády, V., Armiento, R., Szász, K., Janzén, E., Gali, Á., & Abrikosov, I. A. (2014) · Physical Review B · doi:10.1103/physrevb.90.035146 · Cited by 65 · see citing works
Cavity-Enhanced Measurements of Defect Spins in Silicon Carbide
Calusine, G., Politi, A., & Awschalom, D. D. (2016) · Physical Review Applied · doi:10.1103/physrevapplied.6.014019 · Cited by 61 · see citing works
Bogdanović, S., van Dam, S. B., Bonato, C., Coenen, L. C., Zwerver, A.-M., Hensen, B., Liddy, M. S. Z., Fink, T., Reiserer, A., Lončar, M., et al. (2017) · Applied Physics Letters · doi:10.1063/1.4982168 · Cited by 59 · see citing works
Electron–vibration coupling induced renormalization in the photoemission spectrum of diamondoids
Gali, Á., Demján, T., Vörös, M., Thiering, G., Cannuccia, E., & Marini, A. (2016) · Nature Communications · doi:10.1038/ncomms11327 · Cited by 58 · see citing works
Self-citationRole of screening in the density functional applied to transition-metal defects in semiconductors
Ivády, V., Abrikosov, I. A., Janzén, E., & Gali, Á. (2013) · Physical Review B · doi:10.1103/physrevb.87.205201 · Cited by 54 · see citing works
Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC
Mitchel, W. C., Mitchell, W. D., Landis, G. R., Smith, H. E., Lee, W., & Zvanut, M. E. (2007) · Journal of Applied Physics · doi:10.1063/1.2407263 · Cited by 50 · see citing works
Quantum control of the hyperfine-coupled electron and nuclear spins in alkali-metal atoms
Merkel, S., Jessen, P., & Deutsch, I. (2008) · Physical Review A · doi:10.1103/physreva.78.023404 · Cited by 40 · see citing works
Kunzer, M., Müller, H. D., & Kaufmann, U. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.48.10846 · Cited by 40 · see citing works
Photonic graph state generation from quantum dots and color centers for quantum communications
Russo, A., Barnes, E., & Economou, S. E. (2018) · Physical review. B./Physical review. B · doi:10.1103/physrevb.98.085303 · Cited by 40 · see citing works
Londero, E., Thiering, G., Razinkovas, L., Gali, Á., & Alkauskas, A. (2018) · Physical review. B./Physical review. B · doi:10.1103/physrevb.98.035306 · Cited by 40 · see citing works
Self-citationAll-optical coherent population trapping with defect spin ensembles in silicon carbide
Zwier, O. V., O’Shea, D. G., Onur, A. R., & van der Wal, C. H. (2015) · Scientific Reports · doi:10.1038/srep10931 · Cited by 39 · see citing works
Crystal-field model of vanadium in 6H silicon carbide
Kaufmann, B. B., Dörnen, A., & Ham, F. S. (1997) · Physical review. B, Condensed matter · doi:10.1103/physrevb.55.13009 · Cited by 37 · see citing works
Fabrication of mirror templates in silica with micron-sized radii of curvature
Najer, D., Renggli, M., Riedel, D., Starosielec, S., & Warburton, R. J. (2017) · Applied Physics Letters · doi:10.1063/1.4973458 · Cited by 35 · see citing works
Arrays of open, independently tunable microcavities
Derntl, C. G., Schneider, M., Schalko, J., Bittner, A., Schmiedmayer, J., Schmid, U., & Trupke, M. (2014) · Optics Express · doi:10.1364/oe.22.022111 · Cited by 34 · see citing works
Self-citationUltrasmooth microfabricated mirrors for quantum information
Biedermann, G. W., Benito, F., Fortier, K., Stick, D., Loyd, T., Schwindt, P. D. D., Nakakura, C. Y., Jarecki, R. L., & Blain, M. G. (2010) · Applied Physics Letters · doi:10.1063/1.3511743 · Cited by 31 · see citing works
Ivády, V., Gällström, A., Són, N. T., Janzén, E., & Gali, Á. (2011) · Physical Review Letters · doi:10.1103/physrevlett.107.195501 · Cited by 29 · see citing works
Nguyen, T., Phan, H., Kamble, H., Vadivelu, R. K., Dinh, T., Iacopi, A., Walker, G., Hold, L., Nguyen, N., & Dao, D. V. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b15381 · Cited by 28 · see citing works
High-fidelity spin measurement on the nitrogen-vacancy center
Hanks, M., Trupke, M., Schmiedmayer, J., Munro, W. J., & Nemoto, K. (2017) · New Journal of Physics · doi:10.1088/1367-2630/aa8085 · Cited by 20 · see citing works
Self-citationNanoparticle detection in an open-access silicon microcavity
Kuhn, S., Wachter, G., Wieser, F.-F., Millen, J., Schneider, M., Schalko, J., Schmid, U., Trupke, M., & Arndt, M. (2017) · Applied Physics Letters · doi:10.1063/1.5008492 · Cited by 19 · see citing works
Self-citationCVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers
Karhu, R., Sveinbjörnsson, E. Ö., Magnusson, B., Ivanov, I. G., Danielsson, Ö., & Ul‐Hassan, J. (2019) · Journal of Applied Physics · doi:10.1063/1.5057389 · Cited by 19 · see citing works
Self-citation
Flagged first, then by citations
Research works printed but not linked: 3
- [20]20. J. Baur, M. Kunzer, and J. Schneider, Transition met- als in SiC polytypes, as studied by magnetic resonance techniques, Phys. Status Solidi (a) 162, 153 (1997).
- [54]54. M. H. Metsch, K. Senkalla, B. Tratzmiller, J. Scheuer, M. Kern, J. Achard, A. Tallaire, M. B. Plenio, P. Siyushev, and F. Jelezko, Initialization and readout of nuclear spins via negatively charged silicon-vacancy cen- ter in diamond, arXiv:1902.02965 [quant-ph] (2019), http://arxiv.org/abs/1902.02965v3. · arXiv
- [58]58. Y. Q. Gao, H. Y. Zhang, J. Song, S. Song, Q. R. Liang, M. Ning, C. Gao, X. J. Wang, Y. M. Zong, H. H. Wang, and M. Dudley, in Silicon Carbide and Related Materials 2014, Materials Science Forum, (Trans Tech Publications, Zürich-Stafa, Pfaffikon, 2015), Vol. 821, p. 51.
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Wolfowicz, G., Heremans, F. J., Anderson, C. P., Kanai, S., Seo, H., Gali, Á., Galli, G., & Awschalom, D. D. (2021) · Nature Reviews Materials · doi:10.1038/s41578-021-00306-y · Cited by 529 · see citing works
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Norman, V. A., Majety, S., Wang, Z., Casey, W. H., Curro, N. J., & Radulaski, M. (2020) · InfoMat · doi:10.1002/inf2.12128 · Cited by 58 · see citing works
Impurities and defects in 4H silicon carbide
Wang, R., Huang, Y., Yang, D., & Pi, X. (2023) · Applied Physics Letters · doi:10.1063/5.0145350 · Cited by 54 · see citing works
Room-temperature coherent control of implanted defect spins in silicon carbide
Yan, F.-F., Yi, A., Wang, J., Li, Q., Yu, P., Zhang, J.-X., Gali, Á., Wang, Y., Xu, J., Ou, X., et al. (2020) · npj Quantum Information · doi:10.1038/s41534-020-0270-8 · Cited by 53 · see citing works
Recent advances in the ab initio theory of solid‐state defect qubits
Gali, Á. (2023) · Nanophotonics · doi:10.1515/nanoph-2022-0723 · Cited by 52 · see citing works
Quantum systems in silicon carbide for sensing applications
Castelletto, S., Lew, C. T.-K., Lin, W.-X., & Xu, J. (2023) · Reports on Progress in Physics · doi:10.1088/1361-6633/ad10b3 · Cited by 50 · see citing works
Quantum information processing with integrated silicon carbide photonics
Majety, S., Saha, P., Norman, V. A., & Radulaski, M. (2022) · Journal of Applied Physics · doi:10.1063/5.0077045 · Cited by 43 · see citing works
Cilibrizzi, P., Arshad, M. J., Tissot, B., Són, N. T., Ivanov, I. G., Astner, T., Koller, P., Ghezellou, M., Ul‐Hassan, J., White, D., et al. (2023) · Nature Communications · doi:10.1038/s41467-023-43923-7 · Cited by 34 · see citing works
Self-citationMichaels, C. P., Martínez, J. A., Debroux, R., Parker, R. A., Stramma, A. M., Huber, L. I., Purser, C. M., Atatüre, M., & Gangloff, D. A. (2021) · Quantum · doi:10.22331/q-2021-10-19-565 · Cited by 30 · see citing works
Xu, S.-W., Wei, Y., Su, R., Li, X., Huang, P., Liu, S., Huang, X., Yu, Y., Liu, J., & Wang, X. (2022) · Photonics Research · doi:10.1364/prj.461034 · Cited by 30 · see citing works
Spin-relaxation times exceeding seconds for color centers with strong spin–orbit coupling in SiC
Gilardoni, C. M., Bosma, T., van Hien, D., Hendriks, F., Magnusson, B., Ellison, A., Ivanov, I. G., Son, N. T., & van der Wal, C. H. (2020) · New Journal of Physics · doi:10.1088/1367-2630/abbf23 · Cited by 27 · see citing works
Self-citationNuclear spin quantum memory in silicon carbide
Tissot, B., Trupke, M., Koller, P., Astner, T., & Burkard, G. (2022) · Physical Review Research · doi:10.1103/physrevresearch.4.033107 · Cited by 25 · see citing works
Self-citationZhang, S., Yu, Y., Liu, H., Chen, H., Li, X., Liu, D., Zhu, F., Liu, Z., & Cheng, Y. (2022) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/s43578-022-00687-y · Cited by 24 · see citing works
von Bardeleben, H. J., Zargaleh, S. A., Cantin, J. L., Gao, W., Biktagirov, T., & Gerstmann, U. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.124605 · Cited by 23 · see citing works
Astner, T., Koller, P., Gilardoni, C. M., Hendriks, J., Són, N. T., Ivanov, I. G., Ul‐Hassan, J., van der Wal, C. H., & Trupke, M. (2024) · Quantum Science and Technology · doi:10.1088/2058-9565/ad48b1 · Cited by 22 · see citing works
Self-citationCsо́rе́, A., Ivanov, I. G., Són, N. T., & Gali, Á. (2022) · Physical review. B./Physical review. B · doi:10.1103/physrevb.105.165108 · Cited by 21 · see citing works
Self-citationHyperfine structure of transition metal defects in SiC
Tissot, B., & Burkard, G. (2021) · Physical review. B./Physical review. B · doi:10.1103/physrevb.104.064102 · Cited by 19 · see citing works
Silicon carbide: A promising platform for scalable quantum networks
Zhou, Y., Tan, J., Hu, H., Hua, S., Jiang, C., Liang, B., Bao, T., Nie, X., Xiao, S., Lu, D., et al. (2025) · Applied Physics Reviews · doi:10.1063/5.0262377 · Cited by 18 · see citing works
High finesse microcavities in the optical telecom O-band
Fait, J., Putz, S., Wachter, G., Schalko, J., Schmid, U., Arndt, M., & Trupke, M. (2021) · Applied Physics Letters · doi:10.1063/5.0066620 · Cited by 17 · see citing works
Self-citationAb initio determination of pseudospin for paramagnetic defects in SiC
Csо́rе́, A., & Gali, Á. (2020) · Physical review. B./Physical review. B · doi:10.1103/physrevb.102.241201 · Cited by 16 · see citing works
Self-citationQuantum Sensing with Spin Defects Beyond Diamond
Roberts, H. C., Abudayyeh, H. A., Li, X., & Li, X. (2025) · ACS Nano · doi:10.1021/acsnano.5c00802 · Cited by 15 · see citing works
Room‐Temperature Solid‐State Quantum Emitters in the Telecom Range
Mu, Z., Rasmita, A., Yang, J., Li, X., & Gao, W. (2021) · Advanced Quantum Technologies · doi:10.1002/qute.202100076 · Cited by 15 · see citing works
Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies
Castelletto, S., & Boretti, A. A. (2024) · ACS Applied Nano Materials · doi:10.1021/acsanm.3c05304 · Cited by 15 · see citing works
Ahn, J., Wicker, C., Bitner, N., Solomon, M. T., Tissot, B., Burkard, G., Dibos, A., Zhang, J., Heremans, F. J., & Awschalom, D. D. (2024) · Physical Review Applied · doi:10.1103/physrevapplied.22.044078 · Cited by 15 · see citing works
Spin structure and resonant driving of spin- 12 defects in SiC
Tissot, B., & Burkard, G. (2021) · Physical review. B./Physical review. B · doi:10.1103/physrevb.103.064106 · Cited by 14 · see citing works
Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Gilardoni, C. M., Ion, I., Hendriks, F., Trupke, M., & van der Wal, C. H. (2021) · New Journal of Physics · doi:10.1088/1367-2630/ac1641 · Cited by 14 · see citing works
Self-citationStrain engineering for transition-metal defects in SiC
Tissot, B., Udvarhelyi, P., Gali, Á., & Burkard, G. (2024) · Physical review. B./Physical review. B · doi:10.1103/physrevb.109.054111 · Cited by 13 · see citing works
Saha, P., Majety, S., & Radulaski, M. (2023) · Scientific Reports · doi:10.1038/s41598-023-31362-9 · Cited by 11 · see citing works
Broadband single-mode planar waveguides in monolithic 4H-SiC
Bosma, T., Hendriks, J., Ghezellou, M., Són, N. T., Ul‐Hassan, J., & van der Wal, C. H. (2022) · Journal of Applied Physics · doi:10.1063/5.0077164 · Cited by 10 · see citing works
Bader, J., Arianfard, H., Peruzzo, A., & Castelletto, S. (2024) · npj Nanophotonics · doi:10.1038/s44310-024-00031-8 · Cited by 12 · see citing works
Spontaneous Parametric Down‐Conversion in 4H‐SiC Integrated Platform
Shi, X., Baiju, A. A., Dhyani, V., Wang, S., Mohanraj, S. S., Leong, V., Sun, J., Deng, B., Zhang, J., Wang, Y., et al. (2025) · Laser & Photonics Review · doi:10.1002/lpor.202500104 · Cited by 8 · see citing works
Defects distribution and evolution in selected-area helium ion implanted 4H–SiC
Song, Y., Xu, Z., Rommel, M., Astakhov, G. V., Hlawacek, G., & Fang, F. (2023) · Ceramics International · doi:10.1016/j.ceramint.2023.12.096 · Cited by 8 · see citing works
Thermal tuning of a fiber-integrated Fabry-Pérot cavity
Singer, C., Goetz, A., Prasad, A. S., Becker, M., Rothhardt, M. W., & Skoff, S. M. (2021) · Optics Express · doi:10.1364/oe.433094 · Cited by 8 · see citing works
Inam, F. A., & Castelletto, S. (2023) · Nanomaterials · doi:10.3390/nano13010195 · Cited by 8 · see citing works
Si, M., Zhou, L., Peng, W., Zhang, X., Yi, A., Wang, C., Zhou, H., Wang, Z., Ou, X., & You, L. (2023) · Applied Physics Letters · doi:10.1063/5.0164368 · Cited by 7 · see citing works
Color center in β -Ga2O3 emitting at the telecom range
Stehr, J. E., Jansson, M., Pearton, S. J., McCloy, J. S., Jesenovec, J., Dutton, B. L., McCluskey, M. D., Chen, W., & Buyanova, I. A. (2024) · Applied Physics Letters · doi:10.1063/5.0179921 · Cited by 7 · see citing works
Strain-enabled control of the vanadium qudit in silicon carbide
Koller, P., Astner, T., Tissot, B., Burkard, G., & Trupke, M. (2025) · Physical Review Materials · doi:10.1103/physrevmaterials.9.l043201 · Cited by 7 · see citing works
Self-citationZhang, S., Cui, X., Liu, H., Yu, Y., Chen, H., Li, X., Liu, D., & Zhu, F. (2022) · Radiation effects and defects in solids · doi:10.1080/10420150.2022.2079086 · Cited by 7 · see citing works
2022 Roadmap on integrated quantum photonics
Moody, G., Sorger, V. J., Blumenthal, D. J., Juodawlkis, P. W., Loh, W., Sorace-Agaskar, C., Jones, A. E., Balram, K. C., Matthews, J. C. F., Laing, A., et al. (2022) · Journal of Physics: Photonics · doi:10.1088/2515-7647/ac1ef4 · Cited by 6 · see citing works
“While Si vacancy and divacancy in 4H-SiC provide longer operating wavelengths than diamond defects and QDs, emerging SiC color centers, such as the NV [128, 129] and the vanadium center [130], are currently explored in the range 1300–1550 nm.”
BackgroundTemperature dependence of deep level positions and capture cross sections in vanadium-doped 4H-SiC
Lan, Y., Peng, B., Wang, Y., Yuan, H., Hu, J., Dong, L., Guo, H., & Zhang, Y. (2025) · Journal of Applied Physics · doi:10.1063/5.0256960 · Cited by 6 · see citing works
Spin Qubits Candidate in Transition-Metal-Ion doped Halide Double Perovskites
Khamkaeo, S., Mopoung, K., Mukhuti, K., de Dreu, M. W., Dávid, A., Zhang, M., Fahlman, M., Gao, F., Christianen, P. C. M., Buyanova, I. A., et al. (2026) · Nature Communications · doi:10.1038/s41467-025-67980-2 · Cited by 6 · see citing works
Magnetic-field-dependent spin properties of divacancy defects in silicon carbide
Yan, F.-F., Wang, J., He, Z.-X., Li, Q., Lin, W.-X., Zhou, J.-Y., Xu, J., Li, C., & Guo, G. (2023) · Nanoscale · doi:10.1039/d2nr06624f · Cited by 6 · see citing works
Donor–Acceptor Pairs Near Silicon Carbide Surfaces
Bilgin, A., Hammock, I., High, A. A., & Galli, G. (2025) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5c02376 · Cited by 4 · see citing works
Zhao, X., Liu, M., Zhang, Q., & Duan, C. (2025) · Advanced Functional Materials · doi:10.1002/adfm.202526154 · Cited by 4 · see citing works
Point Defects in Silicon Carbide for Quantum Technology
Csо́rе́, A., & Gali, Á. (2021) · doi:10.1002/9783527824724.ch17 · Cited by 4 · see citing works
Self-citationEngineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
Anisimov, A. N., Mathews, A. V., Mavridou, K., Kentsch, U., Helm, M., & Astakhov, G. V. (2025) · Optics Express · doi:10.1364/oe.581705 · Cited by 3 · see citing works
Chakravorty, A., & Kabiraj, D. (2022) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ac875e · Cited by 3 · see citing works
All-in-one quantum diamond microscope for sensor characterization
Roncaioli, C., Hart, C., Walsworth, R. L., & Fahey, D. P. (2024) · AVS Quantum Science · doi:10.1116/5.0222809 · Cited by 3 · see citing works
CVD growth of SiC for high-power and high-frequency applications
Karhu, R. (2019) · Linköping studies in science and technology. Dissertations · doi:10.3384/diss.diva-154467 · Cited by 2 · see citing works
Self-citationEdinach, E. V., Krivoruchko, A. D., Gurin, A. S., Muzafarova, M. V., Ilyin, I. V., Babunts, R. A., Romanov, N. G., Badalyan, A. G., & Baranov, P. G. (2020) · Semiconductors · doi:10.1134/s1063782620010066 · Cited by 2 · see citing works
Gothard, N., Zhan, T., Mattish, R., Collins, C. M., Dudis, D. S., & Bissell, L. J. (2020) · Journal of Physics and Chemistry of Solids · doi:10.1016/j.jpcs.2020.109469 · Cited by 2 · see citing works
Zwier, O. V., Bosma, T., Gilardoni, C. M., Yang, X., Onur, A. R., Ohshima, T., Són, N. T., & van der Wal, C. H. (2022) · Journal of Applied Physics · doi:10.1063/5.0077112 · Cited by 2 · see citing works
Vanadium photoluminescence in 3C-SiC
Shafizadeh, D., Jokubavičius, V., Murata, K., Tsuchida, H., Udvarhelyi, P., Bian, G., Lang, O. E., Karaman, M., Enriquez, D. H., Brehm, M., et al. (2026) · Physical review. B./Physical review. B · doi:10.1103/nv8v-gwlv · Cited by 1 · see citing works
Self-citationCrystal Symmetry-Driven Spin-Optical Dynamics in Cr 3+ Molecular Spins
Wojnar, M. K., Johnson, D. A., Badding, C. K., Quan, Y., Dzikovski, B. G., & Freedman, D. E. (2026) · Inorganic Chemistry · doi:10.1021/acs.inorgchem.5c04986 · Cited by 1 · see citing works
Sato, S., Asada, S., & Murata, K. (2026) · Advanced Optical Materials · doi:10.1002/adom.202503749 · Cited by 1 · see citing works
Optical Spectroscopy of Telecom-Wavelength Single Vanadium Quantum Emitters in SiC
Cilibrizzi, P., Arshad, M. J., Astner, T., Koller, P., Són, N. T., Ivanov, I. G., Ul‐Hassan, J., Trupke, M., & Bonato, C. (2023) · doi:10.1364/cleo_fs.2023.fm1e.8 · Cited by 1 · see citing works
Self-citationOptically addressable spins in silicon carbide and related 2D materials
Gilardoni, C. M. (2021) · doi:10.33612/diss.192999111
Color centers in silicon carbide
Bathen, M. E., Linderälv, C., Großner, U., & Vines, L. (2025) · Elsevier eBooks · doi:10.1016/b978-0-443-13717-4.00014-1
Alfieri, G., Buitrago, E., & Micheletto, R. (2025) · physica status solidi (b) · doi:10.1002/pssb.202500142
PT3 - Quantum Technology with Spin Centres in Semiconductors
Trupke, M. (2025) · doi:10.5162/smsi2025/pt3
Self-citationGeneral Properties of Bulk SiC
Fan, J., & Chu, P. K.-H. (2025) · Engineering materials and processes · doi:10.1007/978-3-032-10986-6_2
Dopant-induced property modifications in aqueous-synthesized SiC nanoparticles
Esmael, M. M., Omar, M. S., & Degdelen, F. (2026) · Micro and Nanostructures · doi:10.1016/j.micrna.2026.208580
Multiscale simulation in vanadium-doped 4H-SiC: a defect-carrier–phonon synergy
Chen, C., Guan, Y., Cheng, C., Wang, C., Gao, Q., Wang, X., & Wu, K. (2026) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ae3df1
Tetrachotomous cat states under the impact of a heat reservoir
Gong, Y., Du, J., Akhtar, N., Idrees, M., & Yang, X. (2026) · Physics Letters A · doi:10.1016/j.physleta.2026.131891
Anonymous, Gong, X.-G., & Yang, J. (2026) · Physical review. B./Physical review. B · doi:10.1103/m3lf-1v7z
Silicon carbide present and future applications in photonics, energy and quantum technology
Bekker, C., Syväjärvi, M., & Castelletto, S. (2026) · Materials for Quantum Technology · doi:10.1088/2633-4356/ae98d3
- Authors
- Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. U., Son, N. T., Fromherz, T., Gali, A., & Trupke, M.
- Affiliations
- Johannes Kepler University of Linz (AT)
- Institute for Solid State Physics and Optics (HU)
- University of Vienna (AT)
- Linköping University (SE)
- Budapest University of Technology and Economics (HU)
- Venue
- Physical Review Applied
- Publisher
- American Physical Society (APS)
- Published
- 2019-07-09
- Volume
- 12
- Issue
- 1
- ISSN
- 2331-7019 (ISSN-L)
- OpenAlex
- W2909864025
- Cited by
- 82
- References
- 70
- Citations by year
- 2026: 9 · 2025: 12 · 2024: 8 · 2023: 11 · 2022: 12 · 2021: 13 · 2020: 15 · 2019: 2
- FWCI
- 3.79
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Physical Review Applied (publishedVersion, other-oa)
- arXiv (Cornell University) (submittedVersion)
- DiVA (Linkoping University) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Funders
- Swedish Research Council (VR 2016-04068)
- Swedish Energy Agency (43611-1)
- Knut and Alice Wallenberg Foundation (KAW 2018.0071)
- National Research, Development and Innovation Office in Hungary (2017-1.2.1-NKP-2017-00001)
- National Quantum Technology Program
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Diamond and Carbon-based Materials Research
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum optics and atomic interactions
- Keywords
- vanadium impurities, 4H-SiC, silicon carbide, single-photon sources, light emission, O-band, telecom wavelengths, spin-photon interface, quantum communication, nuclear spin, diamond, quantum emitters
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