The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Optically initialized robust valley-polarized holes in monolayer WSe2
Open accessAbstract
A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe 2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (∼10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.
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Citations
Cites
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Cited by
Schaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
Zhu, H., Yi, J., Li, M.-Y., Xiao, J., Zhang, L., Yang, C.-W., Kaindl, R. A., Li, L.-J., Wang, Y., & Zhang, X. (2018) · Science · doi:10.1126/science.aar2711 · Cited by 429
Self-citationObservation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures
Kim, J., Jin, C., Chen, B., Cai, H., Zhao, T., Lee, P., Kahn, S., Watanabe, K., Taniguchi, T., Tongay, S., et al. (2017) · Science Advances · doi:10.1126/sciadv.1700518 · Cited by 304
Valleytronics in transition metal dichalcogenides materials
Liu, Y., Gao, Y., Zhang, S., He, J., Yu, J., & Liu, Z. (2019) · Nano Research · doi:10.1007/s12274-019-2497-2 · Cited by 285
Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures
Kozawa, D., Carvalho, A., Verzhbitskiy, I., Giustiniano, F., Miyauchi, Y., Mouri, S., Castro Neto, A. H., Matsuda, K., & Eda, G. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b00801 · Cited by 264
Metadata
- Authors
- Hsu, W.-T., Chen, Y.-L., Chen, C.-H., Liu, P.-S., Hou, T.-H., Li, L.-J., & Chang, W.-H.
- Venue
- Nature Communications
- Published
- 2015-11-25
- Volume
- 6
- Issue
- 1
- Pages
- 8963-8963
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2253716298
- Cited by
- 207
- References
- 1
- FWCI
- 8.13
- Type
- journal article
- Language
- en
- Open access
- gold
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- Hsu, W.-T., Chen, Y.-L., Chen, C.-H., Liu, P.-S., Hou, T.-H., Li, L.-J., & Chang, W.-H. (2015). Optically initialized robust valley-polarized holes in monolayer WSe2. Nature Communications. https://doi.org/10.1038/ncomms9963
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