Cited by 245Magnetic properties of thin filmsSemiconductor materials and interfacesQuantum and electron transport phenomena

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Large anomalous Hall effect in a silicon-based magnetic semiconductor

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Manyala, Ncholu, Sidis, Yvan, DiTusa, John F., Aeppli, Gabriel, Young, David P., Fisk, Zachary·2004·Nature Materials

DOI 10.1038/nmat1103

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Abstract

Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.

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Authors: Manyala, N., Sidis, Y., DiTusa, J. F., Aeppli, G., Young, D. P., & Fisk, Z.
Affiliations: Louisiana State University (US)
London Centre for Nanotechnology (GB)
Florida State University (US)
Corresponding author: DiTusa, John F.
ORCID: Manyala, Ncholu
Sidis, Yvan
DiTusa, John F.
Aeppli, Gabriel
Young, David P.
Fisk, Zachary
Venue: Nature Materials
Publisher: Springer Science and Business Media LLC
Published: 2004-03-21
Volume: 3
Issue: 4
Pages: 255-262
ISSN: 1476-1122 (ISSN-L)
1476-4660
DOI: 10.1038/nmat1103
OpenAlex: W2008268601
Cited by: 244
References: 54
Citations by year: 2026: 9 · 2025: 15 · 2024: 15 · 2023: 7 · 2022: 9 · 2021: 5 · 2020: 10 · 2019: 15 · 2018: 11 · 2017: 5 · 2016: 13 · 2015: 8 · 2014: 13 · 2013: 8 · 2012: 10
FWCI: 6.64
Type: journal article
Language: en
Open access: green
arxiv.org
Licence: www.springer.com/tdm (tdm)
www.springer.com/tdm (vor)
Locations: Nature Materials (publishedVersion)
PubMed (publishedVersion)
arXiv (Cornell University) (submittedVersion)
Civil War Book Review (submittedVersion)
UCL Discovery (University College London) (submittedVersion)
arXiv (Cornell University)
Funders: National Science Foundation (0103892, 0203214)
Engineering and Physical Sciences Research Council (GR/S23506/01)
Division of Materials Research
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Magnetic properties of thin films
Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Semiconductor materials and interfaces
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
Keywords: anomalous Hall effect, magnetic semiconductors, FeSi, cobalt doping, spintronics, Curie temperature, Hall conductance
MeSH terms: Cobalt, Electricity, Ferric Compounds, Magnetics, Semiconductors, Silicon, Temperature

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Large anomalous Hall effect in a silicon-based magnetic semiconductor

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