The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Substrate-induced bandgap opening in epitaxial graphene
Open accessAbstract
Graphene has shown great application potential as the host material for next-generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is the lack of an energy gap in its electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here, we show that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe that our results highlight a promising direction for bandgap engineering of graphene.
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Cites
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Cited by
The electronic properties of graphene
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“There is also eviden e for strongintera tion between a substrate and the graphene layerleading to the appearan e of gaps at the Dira point(Zhou et al., 2007).”
BackgroundMethodResultSelf-citationGraphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Berry phase effects on electronic properties
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A topological Dirac insulator in a quantum spin Hall phase
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“1, but its spin-orbit coupling is several orders of magnitude weaker [3], and the only known method of inducing a gap in the Dirac spectrum of graphene is by coupling to an external chemical substrate [20].”
BackgroundValley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
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Metadata
- Authors
- Zhou, S. Y., Gweon, G.-H., Fedorov, A. V., First, P. N., de Heer, W. A., Lee, D.-H., Guinea, F., Castro Neto, A. H., & Lanzara, A.
- Venue
- Nature Materials
- Published
- 2007-09-09
- Volume
- 6
- Issue
- 10
- Pages
- 770-775
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W2113674800
- Cited by
- 2,381
- References
- 29
- FWCI
- 72.95
- Type
- journal article
- Language
- en
- Open access
- green
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- Zhou, S. Y., Gweon, G.-H., Fedorov, A. V., First, P. N., de Heer, W. A., Lee, D.-H., Guinea, F., Castro Neto, A. H., & Lanzara, A. (2007). Substrate-induced bandgap opening in epitaxial graphene. Nature Materials. https://doi.org/10.1038/nmat2003
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