The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Conduction at domain walls in oxide multiferroics
Open accessAbstract
Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.
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Cites
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
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Advances in magnetoelectric multiferroics
Spaldin, N. A., & Ramesh, R. (2019) · Nature Materials · doi:10.1038/s41563-018-0275-2 · Cited by 1,766
Self-citationResistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Bader, S. D., & Parkin, S. S. P. (2010) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-070909-104123 · Cited by 700
BiFeO 3 Ceramics: Processing, Electrical, and Electromechanical Properties
Rojac, T., Bencan, A., Malic, B., Tutuncu, G., Jones, J. L., Daniels, J. E., & Damjanovic, D. (2014) · Journal of the American Ceramic Society · doi:10.1111/jace.12982 · Cited by 482
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
Jiang, A. Q., Wang, C., Jin, K. J., Liu, X. B., Scott, J. F., Hwang, C. S., Tang, T. A., Lu, H. B., & Yang, G. Z. (2011) · Advanced Materials · doi:10.1002/adma.201004317 · Cited by 438
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Metadata
- Authors
- Seidel, J., Martin, L. W., He, Q., Zhan, Q., Chu, Y.-H., Rother, A., Hawkridge, M. E., Maksymovych, P., Yu, P., Gajek, M., Balke, N., Kalinin, S. V., Gemming, S., Wang, F., Catalan, G., Scott, J. F., Spaldin, N. A., Orenstein, J., & Ramesh, R.
- Venue
- Nature Materials
- Published
- 2009-01-25
- Volume
- 8
- Issue
- 3
- Pages
- 229-234
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W2124851915
- Cited by
- 1,427
- References
- 1
- FWCI
- 29.62
- Type
- journal article
- Language
- en
- Open access
- green
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- Seidel, J., Martin, L. W., He, Q., Zhan, Q., Chu, Y.-H., Rother, A., Hawkridge, M. E., Maksymovych, P., Yu, P., Gajek, M., Balke, N., Kalinin, S. V., Gemming, S., Wang, F., Catalan, G., Scott, J. F., Spaldin, N. A., Orenstein, J., & Ramesh, R. (2009). Conduction at domain walls in oxide multiferroics. Nature Materials. https://doi.org/10.1038/nmat2373
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