The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
Open accessAbstract
The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Metal dichalcogenide nanosheets: preparation, properties and applications
Huang, X., Zeng, Z., & Zhang, H. (2013) · Chemical Society Reviews · doi:10.1039/c2cs35387c · Cited by 2,030
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Self-citationDuan, X., Wang, C., Pan, A., Yu, R., & Duan, X. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00507h · Cited by 1,161
Self-citation25th Anniversary Article: Hybrid Nanostructures Based on Two‐Dimensional Nanomaterials
Huang, X., Tan, C., Yin, Z., & Zhang, H. (2014) · Advanced Materials · doi:10.1002/adma.201304964 · Cited by 632
Metadata
- Authors
- Yu, W. J., Li, Z., Zhou, H., Chen, Y., Wang, Y., Huang, Y., & Duan, X.
- Venue
- Nature Materials
- Published
- 2012-12-16
- Volume
- 12
- Issue
- 3
- Pages
- 246-252
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W2129024591
- Cited by
- 934
- References
- 2
- FWCI
- 28.09
- Type
- journal article
- Language
- en
- Open access
- green
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- Yu, W. J., Li, Z., Zhou, H., Chen, Y., Wang, Y., Huang, Y., & Duan, X. (2013). Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nature Materials. https://doi.org/10.1038/nmat3518
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