The DOI matches its Crossref record; 64 of the 64 references it cites were found in a registry or an index.
Spin-torque building blocks
Open accessAbstract
The discovery of the spin-torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin torque provides an efficient tool to manipulate - precisely, rapidly and at low energy cost - the magnetic state, which is in turn the central information medium of spintronic devices. By keeping the same magnetic stack, but by tuning a device's shape and bias conditions, the spin torque can be engineered to build a variety of advanced magnetic nanodevices. Here we show that by assembling these nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged. We focus in particular on recent concepts such as magnonics and spintronic neural networks.
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Cites
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Background
Cited by
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system
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The Future of Memristors: Materials Engineering and Neural Networks
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Neuromorphic device architectures with global connectivity through electrolyte gating.
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Spintronic devices for energy-efficient data storage and energy harvesting
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Metadata
- Authors
- Locatelli, N., Cros, V., & Grollier, J.
- Venue
- Nature Materials
- Published
- 2013-12-17
- Volume
- 13
- Issue
- 1
- Pages
- 11-20
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W2051505329
- Cited by
- 649
- References
- 64
- FWCI
- 24.33
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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