The DOI matches its Crossref record; 39 of the 39 references it cites were found in a registry or an index.
Low-frequency 1/f noise in graphene devices
Open accessAbstract
Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.
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Cites
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Cited by
Phonons and thermal transport in graphene and graphene-based materials
Nika, D. L., & Balandin, A. A. (2017) · Reports on Progress in Physics · doi:10.1088/1361-6633/80/3/036502 · Cited by 359
Self-citationShim, J., Lim, J., Geum, D.-M., You, J.-B., Yoon, H., Kim, J. P., Baek, W. J., Kim, I., Han, J.-H., & Kim, S. (2022) · Optics Express · doi:10.1364/oe.469862 · Cited by 13
Metadata
- Authors
- Balandin, A. A.
- Venue
- Nature Nanotechnology
- Published
- 2013-08
- Volume
- 8
- Issue
- 8
- Pages
- 549-555
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2022041481
- Cited by
- 649
- References
- 39
- FWCI
- 20.13
- Type
- journal article
- Language
- en
- Open access
- green
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