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Cited by 13Photonic and Optical DevicesAdvanced Fiber Optic SensorsPhotorefractive and Nonlinear Optics

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High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors

Open access
Shim, Joonsup, Lim, Jinha, Geum, Dae-Myeong, You, Jong-Bum, Yoon, Hyeonho, Kim, Joon Pyo, Baek, Woo Jin, Kim, Inki, Han, Jae-Hoon, Kim, SangHyeon·2022·Optics Express
DOI 10.1364/oe.469862
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Abstract

Conventional photon detectors necessarily face critical challenges regarding strong wavelength-selective response and narrow spectral bandwidth, which are undesirable for spectroscopic applications requiring a wide spectral range. With this perspective, herein, we overcome these challenges through a free-carrier absorption-based waveguide-integrated bolometer for infrared spectroscopic sensors on a silicon-on-insulator (SOI) platform featuring a spectrally flat response at near-infrared (NIR) range (1520-1620 nm). An in-depth thermal analysis was conducted with a systematic investigation of geometry dependence on the detectors. We achieved great performances: temperature coefficient of resistance (TCR) of -3.786%/K and sensitivity of -26.75%/mW with a low wavelength dependency, which are record-high values among reported waveguide bolometers so far, to our knowledge. In addition, a clear on-off response with the rise/fall time of 24.2/29.2 µs and a 3-dB roll-off frequency of ∼22 kHz were obtained, sufficient for a wide range of sensing applications. Together with the possibility of expanding an operation range to the mid-infrared (MIR) band, as well as simplicity in the detector architecture, our work here presents a novel strategy for integrated photodetectors covering NIR to MIR at room temperature for the development of the future silicon photonic sensors with ultrawide spectral bandwidth.

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  • The device is sufficiently robust for MIR lab-on-a-chip systems expected to operate at a bandwidth of several tens of kHz level.

    “This suggests that our device is sufficiently robust for MIR lab-on-a-chip systems, which can be expected to operate at a bandwidth of several tens of kHz level, based on our previous work with the Si-on-insulator (SOI) platform in the near-infrared wavelength range35.”

    From Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications (2025) · cites this paper as [35]

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Metadata

Authors
Shim, J., Lim, J., Geum, D.-M., You, J.-B., Yoon, H., Kim, J. P., Baek, W. J., Kim, I., Han, J.-H., & Kim, S.
Affiliations
  • Korea Advanced Institute of Science and Technology (KR)
  • National NanoFab Center (KR)
  • Korea Institute of Science and Technology (KR)
ORCID
Venue
Optics Express
Publisher
Optica Publishing Group
Published
2022-11-04
Volume
30
Issue
23
Pages
42663
ISSN
1094-4087 (ISSN-L)
DOI
10.1364/oe.469862
OpenAlex
W4304698091
Cited by
13
References
1
Citations by year
2026: 1 · 2025: 2 · 2024: 9 · 2023: 1
FWCI
0.82
Type
journal article
Language
en
Open access
Licence
Locations
Optics Express (publishedVersion)
Funders
  • National Research Foundation of Korea (2020R1F1A105271813, 2022M3I8A107725711)
  • Korea Institute of Science and Technology (2E31372)
  • National NanoFab Center (PA0107005)
  • BrainKorea 21 (BK21) FOUR
  • Institute for Information and Communications Technology Promotion (2022-0-00208)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Fiber Optic Sensors
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
Keywords
free carrier absorption, silicon photonics, silicon-on-insulator, infrared detectors, temperature coefficient of resistance, thermal analysis, near-infrared spectroscopy, mid-infrared detection, room-temperature photodetection, wavelength-selective detection

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