The DOI matches its Crossref record; 41 of the 41 references it cites were found in a registry or an index.
Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry
Open accessAbstract
The valley degree of freedom of electrons is attracting growing interest as a carrier of information in various materials, including graphene, diamond and monolayer transition-metal dichalcogenides. The monolayer transition-metal dichalcogenides are semiconducting and are unique due to the coupling between the spin and valley degrees of freedom originating from the relativistic spin-orbit interaction. Here, we report the direct observation of valley-dependent out-of-plane spin polarization in an archetypal transition-metal dichalcogenide--MoS2--using spin- and angle-resolved photoemission spectroscopy. The result is in fair agreement with a first-principles theoretical prediction. This was made possible by choosing a 3R polytype crystal, which has a non-centrosymmetric structure, rather than the conventional centrosymmetric 2H form. We also confirm robust valley polarization in the 3R form by means of circularly polarized photoluminescence spectroscopy. Non-centrosymmetric transition-metal dichalcogenide crystals may provide a firm basis for the development of magnetic and electric manipulation of spin/valley degrees of freedom.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Self-citationCoupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
Xiao, D., Liu, G.-B., Feng, W., Xu, X., & Yao, W. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.196802 · Cited by 5,152
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., & Ryu, S. (2010) · ACS Nano · doi:10.1021/nn1003937 · Cited by 4,859
From Bulk to Monolayer MoS2: Evolution of Raman Scattering
Li, H., Zhang, Q., Yap, C. C. R., Tay, B. K., Edwin, T. H. T., Olivier, A., & Baillargeat, D. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201102111 · Cited by 4,249
Wilson, J. A., & Yoffe, A. D. (1969) · Advances in Physics · doi:10.1080/00018736900101307 · Cited by 4,090
Control of valley polarization in monolayer MoS2 by optical helicity
Mak, K. F., He, K., Shan, J., & Heinz, T. F. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.96 · Cited by 4,034
Valley polarization in MoS2 monolayers by optical pumping
Zeng, H., Dai, J., Yao, W., Xiao, D., & Cui, X. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.95 · Cited by 3,693
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Cited by
Liu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
Suh, J., Park, T.-E., Lin, D.-Y., Fu, D., Park, J., Jung, H. J., Chen, Y., Ko, C., Jang, C., Sun, Y., et al. (2014) · Nano Letters · doi:10.1021/nl503251h · Cited by 694
Li, S.-L., Tsukagoshi, K., Orgiu, E., & Samorì, P. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00517e · Cited by 549
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Zhang, L., Yang, Z., Gong, T., Pan, R., Wang, H., Guo, Z., Zhang, H., & Fu, X. (2020) · Journal of Materials Chemistry A · doi:10.1039/d0ta01999b · Cited by 406
Metadata
- Authors
- Suzuki, R., Sakano, M., Zhang, Y. J., Akashi, R., Morikawa, D., Harasawa, A., Yaji, K., Kuroda, K., Miyamoto, K., Okuda, T., Ishizaka, K., Arita, R., & Iwasa, Y.
- Venue
- Nature Nanotechnology
- Published
- 2014-07-27
- Volume
- 9
- Issue
- 8
- Pages
- 611-617
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2057290651
- Cited by
- 476
- References
- 41
- FWCI
- 22.63
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. https://app.cochat.ai/papers/10.1038/nnano.2014.148
- The paper
- Suzuki, R., Sakano, M., Zhang, Y. J., Akashi, R., Morikawa, D., Harasawa, A., Yaji, K., Kuroda, K., Miyamoto, K., Okuda, T., Ishizaka, K., Arita, R., & Iwasa, Y. (2014). Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. Nature Nanotechnology. https://doi.org/10.1038/nnano.2014.148
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.