Cited by 371Advanced Memory and Neural ComputingOrganic Electronics and PhotovoltaicsPhase-change materials and chalcogenides

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Leydecker, Tim, Herder, Martin, Pavlica, Egon, Bratina, Gvido, Hecht, Stefan, Orgiu, Emanuele, Samorì, Paolo·2016·Nature Nanotechnology

Abstract

Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

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Crossref · 10.1038/nnano.2016.87

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  • Having multiple CPUs for different applications or parts of the feature-OS together with processors with low leakage can provide power-efficient wearable devices.

    “Having multiple CPUs for different applications or parts of the feature‐OS together with processors with low leakage can provide power‐efficient wearable devices.122”

    From Wearables in Medicine (2018) · cites this paper as [122]

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Authors
Leydecker, T., Herder, M., Pavlica, E., Bratina, G., Hecht, S., Orgiu, E., & Samorì, P.
Affiliations
  • Centre National de la Recherche Scientifique (FR)
  • Humboldt-Universität zu Berlin (DE)
  • University of Nova Gorica (SI)
Corresponding author
  • Hecht, Stefan
  • Orgiu, Emanuele
Venue
Nature Nanotechnology
Published
2016-06-20
Volume
11
Issue
9
Pages
769-775
ISSN
  • 1748-3387 (ISSN-L)
  • 1748-3395
OpenAlex
W2443079762
Cited by
371
References
49
Citations by year
2026: 7 · 2025: 37 · 2024: 30 · 2023: 36 · 2022: 41 · 2021: 54 · 2020: 59 · 2019: 48 · 2018: 32 · 2017: 21 · 2016: 6
FWCI
16.45
Type
journal article
Language
en
Open access
closed
Locations
  • Nature Nanotechnology (publishedVersion)
  • PubMed (publishedVersion)
Funders
Agence Nationale de la Recherche (ANR-10-LABX-0026)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Organic Electronics and Photovoltaics
  • Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords
non-volatile memory, optical memory, thin-film transistors, flexible electronics, multilevel memory, poly(3-hexylthiophene), diarylethene, photochromic polymers, organic semiconductors, polymer blends, laser pulses, write/erase cycles, polyethylene terephthalate substrate, wearable electronics

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