Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend
Abstract
Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.
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Having multiple CPUs for different applications or parts of the feature-OS together with processors with low leakage can provide power-efficient wearable devices.
“Having multiple CPUs for different applications or parts of the feature‐OS together with processors with low leakage can provide power‐efficient wearable devices.122”
From Wearables in Medicine (2018) · cites this paper as [122]
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- Authors
- Leydecker, T., Herder, M., Pavlica, E., Bratina, G., Hecht, S., Orgiu, E., & Samorì, P.
- Affiliations
- Centre National de la Recherche Scientifique (FR)
- Humboldt-Universität zu Berlin (DE)
- University of Nova Gorica (SI)
- Corresponding author
- Hecht, Stefan
- Orgiu, Emanuele
- Venue
- Nature Nanotechnology
- Published
- 2016-06-20
- Volume
- 11
- Issue
- 9
- Pages
- 769-775
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2443079762
- Cited by
- 371
- References
- 49
- Citations by year
- 2026: 7 · 2025: 37 · 2024: 30 · 2023: 36 · 2022: 41 · 2021: 54 · 2020: 59 · 2019: 48 · 2018: 32 · 2017: 21 · 2016: 6
- FWCI
- 16.45
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Nature Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Agence Nationale de la Recherche (ANR-10-LABX-0026)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Organic Electronics and Photovoltaics
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- non-volatile memory, optical memory, thin-film transistors, flexible electronics, multilevel memory, poly(3-hexylthiophene), diarylethene, photochromic polymers, organic semiconductors, polymer blends, laser pulses, write/erase cycles, polyethylene terephthalate substrate, wearable electronics
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