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Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
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“In light of these integration efforts, InP/Si modulators remain promising62–64.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [63]
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Research works printed but not linked: 1
- Adachi, S. Material parameters of In1−xGaxAsyP1−y and related binaries. J. Appl. Phys. 53, 8775–8792 (1982).
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Metadata
- Authors
- Han, J.-H., Boeuf, F., Fujikata, J., Takahashi, S., Takagi, S., & Takenaka, M.
- Affiliations
- The University of Tokyo (JP)
- Photonics Electronics Technology Research Association (JP)
- Corresponding author
- Han, Jae-Hoon
- Takenaka, Mitsuru
- Venue
- Nature Photonics
- Published
- 2017-07-24
- Volume
- 11
- Issue
- 8
- Pages
- 486-490
- ISSN
- 1749-4885 (ISSN-L)
- 1749-4893
- OpenAlex
- W2736387589
- Cited by
- 235
- References
- 50
- Citations by year
- 2026: 17 · 2025: 20 · 2024: 25 · 2023: 26 · 2022: 33 · 2021: 28 · 2020: 26 · 2019: 25 · 2018: 28 · 2017: 6
- FWCI
- 9.67
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Nature Photonics (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Funders
- Japan Society for the Promotion of Science (26709022)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Plasmonic and Surface Plasmon Research
- Keywords
- phase modulation, silicon photonics, electron accumulation, direct wafer bonding, optical interconnects, low optical loss, plasma dispersion
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