Cited by 391Photonic and Optical DevicesPhotorefractive and Nonlinear OpticsSemiconductor Lasers and Optical Devices

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Open access
Rahim, Abdul, Hermans, Artur, Wohlfeil, Benjamin, Petousi, Despoina, Kuyken, Bart, Van Thourhout, Dries, Baets, Roel G.·2021·Advanced Photonics

Abstract

Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1117/1.ap.3.2.024003

Cites

20 of 20 references verified0 citation errors · 0 not checkable

Statistics

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • Electro-optic modulators based on the plasma-dispersion effect exceed a 50 GHz bandwidth.

    “electro-optic modulators based on the plasma-dispersion effect exceed a 50 GHz bandwidth23”

    From Integrated silicon photonic MEMS (2023) · cites this paper as [23]

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Cites

Part of this paper’s reference list could not be split into single entries.

Flagged first, then by citations

Research works printed but not linked: 95

  1. M. Romagnoli et al., "Graphene-based integrated photonics for next-generation datacom and telecom," Nat. Rev. Mater. 3(10), 392-414 (2018). · DOI
  2. J. Witzens, "High-speed silicon photonics modulators," Proc. IEEE 106(12), 2158-2182 (2018). · DOI
  3. B. Milivojevic et al., "112 Gb∕s DP-QPSK transmission over 2427-km SSMF using small-size silicon photonic IQ modulator and low-power CMOS driver," in Opt. Fiber Commun. Conf. and Exposition and Natl. Fiber Opt. Eng. Conf., OTh1D.1 (2013).
  4. S. S. Azadeh et al., "Low V π silicon photonics modulators with highly linear epitaxially grown phase shifters," Opt. Express 23(18), 23526-23550 (2015). · DOI
  5. M. Webster et al., "Low-power MOS-capacitor based silicon photonic modulators and CMOS drivers," in Opt. Fiber Commun. Conf. and Exhib., W4H.3 (2015).
  6. A. Narasimha et al., "A 40-Gb∕s QSFP optoelectronic transceiver in a 0.13-μm CMOS silicon-on-insulator technology," in Conf. Opt. Fiber Commun./Natl. Fiber Opt. Eng. Conf., OMK7 (2008). · DOI
  7. Y. Sobu et al., "70 Gbaud operation of all-silicon Mach-Zehnder modulator based on forward-biased PIN diodes and passive equalizer," in 24th OptoElectron. and Commun. Conf. and Int. Conf. Photonics Switch. and Comput., MD2-2 (2019). · DOI
  8. D. Patel et al., "High-speed compact silicon photonic Michelson interferometric modulator," Opt. Express 22(22), 26788-26802 (2014). · DOI
  9. K. Goi et al., "Silicon Mach-Zehnder modulator using low-loss phase shifter with bottom PN junction formed by restricted-depth doping," IEICE Electron. Express 10(17), 20130552 (2013). · DOI
  10. X. Tu et al., "Silicon optical modulator with shield coplanar waveguide electrodes," Opt. Express 22(19), 23724-23731 (2014). · DOI
  11. J. Van Campenhout et al., "Low-voltage, low-loss, multi-Gb/s silicon micro-ring modulator based on a MOS capacitor," in Opt. Fiber Commun. Conf., OM2E.4 (2012).
  12. X. Xiao et al., "High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization," Opt. Express 21(4), 4116-4125 (2013). · DOI
  13. M. Li et al., "Silicon intensity Mach-Zehnder modulator for single lane 100 Gb∕s applications," Photonics Res. 6(2), 109-116 (2018). · DOI
  14. X. Tu et al., "50-Gb∕s silicon optical modulator with traveling- wave electrodes," Opt. Express 21(10), 12776-12782 (2013). · DOI
  15. D. J. Thomson et al., "50-Gb∕s silicon optical modulator," IEEE Photonics Technol. Lett. 24(4), 234-236 (2012). · DOI
  16. D. Patel et al., "Design, analysis, and transmission system per- formance of a 41 GHz silicon photonic modulator," Opt. Express 23(11), 14263-14287 (2015). · DOI
  17. E. Timurdogan et al., "An ultralow power athermal silicon modu- lator," Nat. Commun. 5(1), 4008 (2014). · DOI
  18. J. Ding et al., "Electro-optical response analysis of a 40 Gb∕s silicon Mach-Zehnder optical modulator," J. Lightwave Technol. 31(14), 2434-2440 (2013). · DOI
  19. S. A. Srinivasan et al., "50 Gb∕s C-band GeSi waveguide electro-absorption modulator," in Opt. Fiber Commun. Conf., Tu3D.7 (2016).
  20. D. Petousi et al., "Monolithically integrated high-extinction-ratio MZM with a segmented driver in photonic BiCMOS," IEEE Photonics Technol. Lett. 28(24), 2866-2869 (2016). · DOI
  21. A. Chen and E. E. Murphy, Broadband Optical Modulators: Science, Technology, and Applications, 1st ed., CRC Press, Boca Raton, Florida (2012).
  22. S. K. Kim et al., "Theoretical and experimental study of 10 Gb∕s transmission performance using 1.55-μm LiNbO 3 -based trans- mitters with adjustable extinction ratio and chirp," J. Lightwave Technol. 17(8), 1320-1325 (1999). · DOI
  23. N. Qi et al., "Co-design and demonstration of a 25-Gb∕s silicon- photonic Mach-Zehnder modulator with a CMOS-based high- swing driver," IEEE J. Sel. Top. Quantum Electron. 22(6), 131-140 (2016). · DOI
  24. L. Chen, P. Dong, and Y. Chen, "Chirp and dispersion tolerance of a single-drive push-pull silicon modulator at 28 Gb∕s," IEEE Photonics Technol. Lett. 24(11), 936-938 (2012). · DOI
  25. M. Jacques et al., "Modulator material impact on chirp, DSP, and performance in coherent digital links: comparison of the lithium niobate, indium phosphide, and silicon platforms," Opt. Express 26(17), 22471-22490 (2018). · DOI
  26. K. Goi et al., "20-Gbps BPSK silicon Mach-Zehnder modulator with excellent chirp-free performance," in 17th Opto-Electron. and Commun. Conf., pp. 238-239 (2012). · DOI
  27. R. Li et al., "High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators," Opt. Express 25(12), 13222-13229 (2017). · DOI
  28. K. Goi et al., "11-Gb∕s 80-km transmission performance of zero- chirp silicon Mach-Zehnder modulator," Opt. Express 20(26), B350-B356 (2012). · DOI
  29. J. Liu et al., "Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators," Nat. Photonics 2(7), 433-437 (2008). · DOI
  30. J. C. Rosenberg et al., "A 25 Gbps silicon microring modulator based on an interleaved junction," Opt. Express 20(24), 26411- 26423 (2012). · DOI
  31. D. A. B. Miller, "Device requirements for optical interconnects to silicon chips," Proc. IEEE 97(7), 1166-1185 (2009). · DOI
  32. Q. Cheng et al., "Recent advances in optical technologies for data centers: a review," Optica 5(11), 1354-1370 (2018). · DOI
  33. M. Asghari and A. V. Krishnamoorthy, "Energy-efficient com- munication," Nat. Photonics 5(5), 268-270 (2011). · DOI
  34. F. Boeuf et al., "Benchmarking Si, SiGe, and III-V/Si hybrid SIS optical modulators for datacenter applications," J. Lightwave Technol. 35(18), 4047-4055 (2017). · DOI
  35. N.-N. Feng et al., "30 GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide," Opt. Express 19(8), 7062-7067 (2011). · DOI
  36. A. Rahim et al., "Open-access silicon photonics: current status and emerging initiatives," Proc. IEEE 106(12), 2313-2330 (2018). · DOI
  37. A. Meighan et al., "Design of 100 GHz-class Mach-Zehnder modulators in a generic indium phosphide platform," in IEEE Photonics Conf. (2020). · DOI
  38. S. Lange et al., "100 GBd intensity modulation and direct detec- tion with an InP-based monolithic DFB laser Mach-Zehnder modulator," J. Lightwave Technol. 36(1), 97-102 (2018). · DOI
  39. K. Luke et al., "Wafer-scale low-loss lithium niobate photonic integrated circuits," Opt. Express 28(17), 24452-24458 (2020). · DOI
  40. D. J. Shin et al., "Integration of silicon photonics into DRAM process," in Opt. Fiber Commun. Conf./Natl. Fiber Opt. Eng. Conf., OTu2C.4 (2013).
  41. R. Meade et al., "TeraPHY: a high-density electronic-photonic Chiplet for optical I/O from a multi-chip module," in Opt. Fiber Commun. Conf., M4D.7 (2019).
  42. F. Boeuf et al., "Recent progress in silicon photonics R&D and manufacturing on 300 mm wafer platform," in Opt. Fiber Commun. Conf., W3A.1 (2015).
  43. S. Fathololoumi et al., "1.6Tbps silicon photonics integrated circuit for co-packaged optical-IO switch applications," in Opt. Fiber Commun. Conf., T3H.1 (2020).
  44. X. Chen et al., "The emergence of silicon photonics as a flexible technology platform," Proc. IEEE 106(12), 2101-2116 (2018). · DOI · Paper page
  45. C. Xiong et al., "Monolithic 56 Gb∕s silicon photonic pulse- amplitude modulation transmitter," Optica 3(10), 1060-1065 (2016). · DOI
  46. P. J. Winzer, D. T. Neilson, and A. R. Chraplyvy, "Fiber-optic transmission and networking: the previous 20 and the next 20 years [Invited]," Opt. Express 26(18), 24190-24239 (2018). · DOI
  47. P. Dong et al., "50-Gb∕s silicon quadrature phase-shift keying modulator," Opt. Express 20(19), 21181-21186 (2012). · DOI
  48. P. Dong et al., "Experimental demonstration of microring quad- rature phase-shift keying modulators," Opt. Lett. 37(7), 1178- 1180 (2012). · DOI
  49. "802.3bs-2017-IEEE Standard for Ethernet Amendment 10: media access control parameters, physical layers, and manage- ment parameters for 200 Gb∕s and 400 Gb∕s operation," https:// standards.ieee.org/standard/802_3bs-2017.html (accessed 16 July 2020).
  50. X. Zhou, R. Urata, and H. Liu, "Beyond 1 Tb∕s intra-data center interconnect technology: IM-DD OR coherent?" J. Lightwave Technol. 38(2), 475-484 (2020). · DOI
  51. B. Jalali and S. Fathpour, "Silicon photonics," J. Lightwave Technol. 24(12), 4600-4615 (2006). · DOI · Paper page
  52. W. Bogaerts et al., "Nanophotonic waveguides in silicon-on- insulator fabricated with CMOS technology," J. Lightwave Technol. 23(1), 401-412 (2005). · DOI
  53. R. Soref and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23(1), 123-129 (1987). · DOI
  54. G. T. Reed and C. J. Png, "Silicon optical modulators," Mater. Today 8(1), 40-50 (2005). · DOI
  55. C. K. Tang and G. T. Reed, "Highly efficient optical phase modulator in SOI waveguides," Electron. Lett. 31(6), 451-452 (1995). · DOI
  56. T. Baba et al., "25-Gb∕s broadband silicon modulator with 0.31-V • cm V π L based on forward-biased PIN diodes embedded with passive equalizer," Opt. Express 23(26), 32950-32960 (2015). · DOI
  57. S. Tanaka et al., "Ultralow-power (1.59 mW∕Gbps), 56-Gbps PAM4 operation of Si photonic transmitter integrating segmented PIN Mach-Zehnder modulator and 28-nm CMOS driver," J. Lightwave Technol. 36(5), 1275-1280 (2018). · DOI
  58. S. Akiyama et al., "High-performance silicon modulator for in- tegrated transceivers fabricated on 300-mm wafer," in Eur. Conf. Opt. Commun., P.2.8 (2014). · DOI
  59. M. Webster et al., "An efficient MOS-capacitor based silicon modulator and CMOS drivers for optical transmitters," in 11th Int. Conf. Group IV Photonics, WB1 (2014). · DOI
  60. J. Fujikata et al., "High-performance MOS-capacitor-type Si op- tical modulator and surface-illumination-type Ge photodetector for optical interconnection," Jpn. J. Appl. Phys. 55(4S), 04EC01 (2016). · DOI
  61. M. Sodagar et al., "Compact, 15 Gb∕s electro-optic modulator through carrier accumulation in a hybrid Si∕SiO 2 ∕Si microdisk," Opt. Express 23(22), 28306-28315 (2015). · DOI
  62. H. Yi et al., "Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission," Opt. Express 20(25), 27562-27568 (2012). · DOI
  63. J.-B. You et al., "12.5 Gbps optical modulation of silicon race- track resonator based on carrier-depletion in asymmetric P-N diode," Opt. Express 16(22), 18340-18344 (2008). · DOI
  64. D. J. Thomson et al., "High speed silicon optical modulator with self aligned fabrication process," Opt. Express 18(18), 19064- 19069 (2010). · DOI
  65. D. J. Thomson et al., "High performance Mach-Zehnder-based silicon optical modulators," IEEE J. Sel. Top. Quantum Electron. 19(6), 85-94 (2013). · DOI
  66. N.-N. Feng et al., "High speed carrier-depletion modulators with 1.4 V-cm V π L integrated on 0.25 μm silicon-on-insulator wave- guides," Opt. Express 18(8), 7994-7999 (2010). · DOI
  67. P. Dong et al., "Low V pp , ultralow-energy, compact, high-speed silicon electro-optic modulator," Opt. Express 17(25), 22484- 22490 (2009). · DOI
  68. D. J. Thomson et al., "High contrast 40 Gbit∕s optical modula- tion in silicon," Opt. Express 19(12), 11507-11516 (2011). · DOI
  69. D. Marris-Morini et al., "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Express 16(1), 334-339 (2008). · DOI
  70. M. Ziebell et al., "40 Gbit∕s low-loss silicon optical modulator based on a pipin diode," Opt. Express 20(10), 10591-10596 (2012). · DOI
  71. H. Xu et al., "High speed silicon Mach-Zehnder modulator based on interleaved PN junctions," Opt. Express 20(14), 15093-15099 (2012). · DOI
  72. H. Yu, W. Bogaerts, and A. De Keersgieter, "Optimization of ion implantation condition for depletion-type silicon optical modulators," IEEE J. Quantum Electron. 46(12), 1763-1768 (2010). · DOI
  73. H. Xu et al., "44 Gbit∕s silicon Mach-Zehnder modulator based on interleaved PN junctions," in 9th Int. Conf. Group IV Photonics, pp. 201-203 (2012). · DOI
  74. Z.-Y. Li et al., "Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions," Opt. Express 17(18), 15947-15958 (2009). · DOI
  75. M. Ziebell et al., "Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions," Opt. Express 19(15), 14690-14695 (2011). · DOI
  76. F. Y. Gardes et al., "40 Gb∕s silicon photonics modulator for TE and TM polarisations," Opt. Express 19(12), 11804-11814 (2011). · DOI
  77. X. Xiao et al., "44-Gb∕s silicon microring modulators based on zigzag PN junctions," IEEE Photonics Technol. Lett. 24(19), 1712-1714 (2012). · DOI
  78. X. Xiao et al., "High speed silicon photonic modulators," in Opt. Fiber Commun. Conf., Tu2H.1 (2017).
  79. A. Irace, G. Breglio, and A. Cutolo, "All-silicon optoelectronic modulator with 1 GHz switching capability," Electron. Lett. 39(2), 232-233 (2003). · DOI
  80. R. Soref and J. Larenzo, "All-silicon active and passive guided- wave components for λ ¼ 13 and 1.6 μm," IEEE J. Quantum Electron. 22(6), 873-879 (1986). · DOI
  81. A. Cutolo et al., "Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI wave- guide," J. Lightwave Technol. 15(3), 505-518 (1997). · DOI
  82. S. Akiyama et al., "Compact PIN-diode-based silicon modulator using side-wall-grating waveguide," IEEE J. Sel. Top. Quantum Electron. 19(6), 74-84 (2013). · DOI
  83. S. J. Spector et al., "High-speed silicon electro-optical modulator that can be operated in carrier depletion or carrier injection mode," in Conf. Lasers and Electro-Opt. and Conf. Quantum Electron. and Laser Sci., CFH4 (2008). · DOI
  84. A. Sciuto et al., "Design, fabrication, and testing of an integrated Si-based light modulator," J. Lightwave Technol. 21(1), 228-235 (2003). · DOI
  85. S. J. Spector et al., "Operation and optimization of silicon-diode- based optical modulators," IEEE J. Sel. Top. Quantum Electron. 16(1), 165-172 (2010). · DOI
  86. J. C. Rosenberg et al., "Ultra-low-voltage micro-ring modulator integrated with a CMOS feed-forward equalization driver," in Opt. Fiber Commun. Conf./Natl. Fiber Opt. Eng. Conf., OWQ4 (2011).
  87. C. E. Png et al., "Optical phase modulators for MHz and GHz modulation in silicon-on-insulator (SOI)," J. Lightwave Technol. 22(6), 1573-1582 (2004). · DOI
  88. Q. Xu et al., "12.5 Gbit∕s carrier-injection-based silicon micro- ring silicon modulators," Opt. Express 15(2), 430-436 (2007). · DOI
  89. A. Shakoor et al., "Compact 1D-silicon photonic crystal electro- optic modulator operating with ultra-low switching voltage and energy," Opt. Express 22(23), 28623-28634 (2014). · DOI
  90. W. M. J. Green et al., "Ultra-compact, low RF power, 10 Gb∕s silicon Mach-Zehnder modulator," Opt. Express 15(25), 17106- 17113 (2007). 100. S. Meister et al., "High-speed Fabry-Pérot optical modulator in silicon with 3-μm diode," J. Lightwave Technol. 33(4), 878-881 (2015). 101. L. Liao et al., "High speed silicon Mach-Zehnder modulator," Opt. Express 13(8), 3129-3135 (2005). 102. A. Liu et al., "A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor," Nature 427(6975), 615- 618 (2004). 103. K. Debnath et al., "All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor," Photonics Res. 6(5), 373-379 (2018). 104. A. Abraham et al., "Evaluation of the performances of a silicon optical modulator based on a silicon-oxide-silicon capacitor," in 11th Int. Conf. Group IV Photonics, WB2 (2014). 105. E. Li et al., "One-volt silicon photonic crystal nanocavity modu- lator with indium oxide gate," Opt. Lett. 43(18), 4429-4432 (2018). 106. L. Liao et al., "40 Gbit∕s silicon optical modulator for high- speed applications," Electron. Lett. 43(22), 1196-1197 (2007). 107. Y. Maegami et al., "High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter," Opt. Express 25(25), 31407-31416 (2017). · DOI
  91. A. Liu et al., "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Express 15(2), 660-668 (2007). 109. F. Y. Gardes et al., "A sub-micron depletion-type photonic modu- lator in silicon on insulator," Opt. Express 13(22), 8845-8854 (2005). 110. M. R. Watts et al., "Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator," IEEE J. Sel. Top. Quantum Electron. 16(1), 159-164 (2010). 111. M. R. Watts et al., "Vertical junction silicon microdisk modula- tors and switches," Opt. Express 19(22), 21989-22003 (2011). 112. H. C. Nguyen et al., "Compact and fast photonic crystal silicon optical modulators," Opt. Express 20(20), 22465-22474 (2012). · DOI
  92. S. A. Srinivasan et al., "56 Gb∕s Germanium waveguide electro- absorption modulator," J. Lightwave Technol. 34(2), 419-424 (2016). 137. J. Verbist et al., "100 Gb∕s DAC-less and DSP-free transmitters using GeSi EAMs for short-reach optical interconnects," in Opt. Fiber Commun. Conf., W4D.4 (2018). 138. A. E.-J. Lim et al., "Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector," Opt. Express 19(6), 5040-5046 (2011). 139. L. Mastronardi et al., "High-speed Si/GeSi hetero-structure electro absorption modulator," Opt. Express 26(6), 6663-6673 (2018). 140. Y. Tang, J. D. Peters, and J. E. Bowers, "Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric seg- mented electrode for 1.3 μm transmission," Opt. Express 20(10), 11529-11535 (2012). · DOI · Paper page
  93. P. Chaisakul et al., "Integrated germanium optical interconnects on silicon substrates," Nat. Photonics 8(6), 482-488 (2014). 142. P. Chaisakul et al., "Recent progress in GeSi electro-absorption modulators," J. Lightwave Technol. 15(1), 014601 (2014). 143. J. Frigerio et al., "Giant electro-optic effect in Ge/SiGe coupled quantum wells," Sci. Rep. 5(1), 15398 (2015). 144. Y.-H. Kuo et al., "Strong quantum-confined Stark effect in ger- manium quantum-well structures on silicon," Nature 437(7063), 1334-1336 (2005). 145. D. A. B. Miller et al., "Band-edge electroabsorption in quantum well structures: the quantum-confined Stark effect," Phys. Rev. Lett. 53(22), 2173-2176 (1984). 146. D. A. B. Miller, "Attojoule optoelectronics for low-energy infor- mation processing and communications," J. Lightwave Technol. 35(3), 346-396 (2017). 147. S. Ren et al., "Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides," IEEE Photonics Technol. Lett. 24(6), 461-463 (2012). 148. P. Chaisakul et al., "23 GHz Ge/SiGe multiple quantum well electro-absorption modulator," Opt. Express 20(3), 3219-3224 (2012). 149. R. M. Audet et al., "Surface-normal Ge/SiGe asymmetric Fabry- Perot optical modulators fabricated on silicon substrates," J. Lightwave Technol. 31(24), 3995-4003 (2013). 150. E. H. Edwards et al., "Ge/SiGe asymmetric Fabry-Perot quan- tum well electroabsorption modulators," Opt. Express 20(28), 29164-29173 (2012). · DOI
  94. P. Chaisakul et al., "Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical intercon- nects," Photonics 6(1), 24 (2019). 152. S. A. Srinivasan et al., "High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si," IEEE J. Quantum Electron. 56(1), 5200207 (2020). 153. M. Liu et al., "A graphene-based broadband optical modulator," Nature 474(7349), 64-67 (2011). 154. M. A. Giambra et al., "High-speed double layer graphene electro- absorption modulator on SOI waveguide," Opt. Express 27(15), 20145-20155 (2019). · DOI
  95. R. R. Nair et al., "Fine structure constant defines visual transpar- ency of graphene," Science 320(5881), 1308 (2008). 287. K. I. Bolotin et al., "Ultrahigh electron mobility in suspended graphene," Solid State Commun. 146(9-10), 351-355 (2008). 288. A. S. Mayorov et al., "Micrometer-scale ballistic transport in encapsulated graphene at room temperature," Nano Lett. 11(6), 2396-2399 (2011). 289. V. Sorianello, M. Midrio, and M. Romagnoli, "Design optimiza- tion of single and double layer graphene phase modulators in SOI," Opt. Express 23(5), 6478-6490 (2015). 290. F. Wang et al., "Gate-variable optical transitions in graphene," Science 320(5873), 206-209 (2008). 291. L. A. Falkovsky, "Optical properties of graphene," J. Phys. Conf. Ser. 129, 012004 (2008). · DOI

Cited by

Sorted by citations

Authors
Rahim, A., Hermans, A., Wohlfeil, B., Petousi, D., Kuyken, B., Van Thourhout, D., & Baets, R. G.
Affiliations
  • Ghent University (BE)
  • ADVA Optical Networking (Germany) (DE)
  • Univ. Gent
Venue
Advanced Photonics
Published
2021-04-29
Volume
3
Issue
02
Pages
1-23
ISSN
2577-5421 (ISSN-L)
OpenAlex
W3159759503
Cited by
391
References
20
Citations by year
2026: 71 · 2025: 92 · 2024: 76 · 2023: 79 · 2022: 55 · 2021: 18
FWCI
16.45
Type
journal article
Language
en
Open access
Locations
  • Advanced Photonics (publishedVersion, cc-by)
  • Ghent University Academic Bibliography (Ghent University) (submittedVersion, cc-by)
  • Ghent University Academic Bibliography (Ghent University) (submittedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
silicon photonics, electro-optic modulator, plasma dispersion effect, high-speed optical links, photonic integrated circuits

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review