Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies
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Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.
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Electro-optic modulators based on the plasma-dispersion effect exceed a 50 GHz bandwidth.
“electro-optic modulators based on the plasma-dispersion effect exceed a 50 GHz bandwidth23”
From Integrated silicon photonic MEMS (2023) · cites this paper as [23]
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Quack, N., Takabayashi, A. Y., Sattari, H., Edinger, P., Jo, G., Bleiker, S. J., Errando-Herranz, C., Gylfason, K. B., Niklaus, F., Khan, U., et al. (2023) · Microsystems & Nanoengineering · doi:10.1038/s41378-023-00498-z · Cited by 155 · see citing works
Evolution of epitaxial BaTiO3 on SrTiO3-buffered Si: Phase field analysis
Li, W., Landis, C. M., & Demkov, A. A. (2022) · Journal of Applied Physics · doi:10.1063/5.0111188 · Cited by 8 · see citing works
- Authors
- Rahim, A., Hermans, A., Wohlfeil, B., Petousi, D., Kuyken, B., Van Thourhout, D., & Baets, R. G.
- Affiliations
- Ghent University (BE)
- ADVA Optical Networking (Germany) (DE)
- Univ. Gent
- Venue
- Advanced Photonics
- Publisher
- SPIE-Intl Soc Optical Eng
- Published
- 2021-04-29
- Volume
- 3
- Issue
- 02
- Pages
- 1-23
- ISSN
- 2577-5421 (ISSN-L)
- OpenAlex
- W3159759503
- Cited by
- 391
- References
- 20
- Citations by year
- 2026: 71 · 2025: 92 · 2024: 76 · 2023: 79 · 2022: 55 · 2021: 18
- FWCI
- 16.45
- Type
- journal article
- Language
- en
- Open access
- diamond
- doi.org
- Licence
- Locations
- Advanced Photonics (publishedVersion, cc-by)
- Ghent University Academic Bibliography (Ghent University) (submittedVersion, cc-by)
- Ghent University Academic Bibliography (Ghent University) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Keywords
- silicon photonics, electro-optic modulator, plasma dispersion effect, high-speed optical links, photonic integrated circuits
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