The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Tunable metal–insulator transition in double-layer graphene heterostructures
Open accessAbstract
Disordered conductors with resistivity above the resistance quantum h/e(2) should exhibit an insulating behaviour at low temperatures, a universal phenomenon known as a strong (Anderson) localization(1-3). Observed in a multitude of materials, including damaged graphene and its disordered chemical derivatives(4-10), Anderson localization has not been seen in generic graphene, despite its resistivity near the neutrality point reaching approximate to h/e(2) per carrier type(4,5). It has remained a puzzle why graphene is such an exception. Here we report a strong localization and the corresponding metal-insulator transition in ultra-high-quality graphene. The transition is controlled externally, by changing the carrier density in another graphene layer placed at a distance of several nm and decoupled electrically. The entire behaviour is explained by electron-hole puddles that disallow localization in standard devices but can be screened out in double-layer graphene. The localization that occurs with decreasing rather than increasing disorder is a unique occurrence, and the reported double-layer heterostructures presents a new experimental system that invites further studies.
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Citations
Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationThe electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Self-citationChiral tunnelling and the Klein paradox in graphene
Katsnelson, M. I., Novoselov, K. S., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys384 · Cited by 3,896
Self-citationDisorder effects in two-dimensional d-wave superconductors
Nersesyan, A. A., Tsvelik, A. M., & Wenger, F. (1994) · Physical Review Letters · doi:10.1103/physrevlett.72.2628 · Cited by 226
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Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
Self-citationVan der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Mayorov, A. S., Peres, N. M. R., et al. (2012) · Nano Letters · doi:10.1021/nl3002205 · Cited by 916
Self-citationCommensurate–incommensurate transition in graphene on hexagonal boron nitride
Woods, C. R., Britnell, L., Eckmann, A., Ma, R. S., Lu, J. C., Guo, H. M., Lin, X., Yu, G. L., Cao, Y., Gorbachev, R. V., et al. (2014) · Nature Physics · doi:10.1038/nphys2954 · Cited by 912
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Metadata
- Authors
- Ponomarenko, L. A., Geim, A. K., Zhukov, A. A., Jalil, R., Morozov, S. V., Novoselov, K. S., Grigorieva, I. V., Hill, E. H., Cheianov, V. V., Fal’ko, V. I., Watanabe, K., Taniguchi, T., & Gorbachev, R. V.
- Venue
- Nature Physics
- Published
- 2011-10-09
- Volume
- 7
- Issue
- 12
- Pages
- 958-961
- ISSN
- 1745-2473 (ISSN-L)
- 1745-2481
- OpenAlex
- W2006717333
- Cited by
- 551
- References
- 4
- FWCI
- 26.65
- Type
- journal article
- Language
- en
- Open access
- bronze
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