The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
Open accessAbstract
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationThe electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Self-citationGraphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Self-citationTwo-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Self-citationBoron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Simmons, J. G. (1963) · Journal of Applied Physics · doi:10.1063/1.1702682 · Cited by 4,200
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., et al. (2012) · Science · doi:10.1126/science.1218461 · Cited by 2,561
Self-citationMicrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
Mayorov, A. S., Gorbachev, R. V., Morozov, S. V., Britnell, L., Jalil, R., Ponomarenko, L. A., Blake, P., Novoselov, K. S., Watanabe, K., Taniguchi, T., et al. (2011) · Nano Letters · doi:10.1021/nl200758b · Cited by 1,672
Self-citationHunting for Monolayer Boron Nitride: Optical and Raman Signatures
Gorbachev, R. V., Riaz, I., Nair, R. R., Jalil, R., Britnell, L., Belle, B. D., Hill, E. W., Novoselov, K. S., Watanabe, K., Taniguchi, T., et al. (2011) · Small · doi:10.1002/smll.201001628 · Cited by 1,151
Self-citation
Cited by
Graphene and boron nitride lateral heterostructures for atomically thin circuitry
Levendorf, M. P., Kim, C.-J., Brown, L., Huang, P. Y., Havener, R. W., Muller, D. A., & Park, J. (2012) · Nature · doi:10.1038/nature11408 · Cited by 855
Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M. (2020) · Advanced Functional Materials · doi:10.1002/adfm.201900657 · Cited by 268
Metadata
- Authors
- Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Mayorov, A. S., Peres, N. M. R., Castro Neto, A. H., Leist, J., Geim, A. K., Ponomarenko, L. A., & Novoselov, K. S.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-03-01
- Volume
- 12
- Issue
- 3
- Pages
- 1707-1710
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2018765018
- Cited by
- 916
- References
- 14
- FWCI
- 25.92
- Type
- journal article
- Language
- en
- Open access
- green
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- Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Mayorov, A. S., Peres, N. M. R., Castro Neto, A. H., Leist, J., Geim, A. K., Ponomarenko, L. A., & Novoselov, K. S. (2012). Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers. Nano Letters. https://doi.org/10.1021/nl3002205
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