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Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Open access
Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, Bokor, Jeffrey·2017·Nature Communications

Abstract

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (Lch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (Ion > 1 μA at Vd = −1 V) and high Ion/Ioff ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.

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Metadata

Authors
Llinas, J. P., Fairbrother, A., Borin Barin, G., Shi, W., Lee, K., Wu, S., Yong Choi, B., Braganza, R., Lear, J., Kau, N., Choi, W., Chen, C., Pedramrazi, Z., Dumslaff, T., Narita, A., Feng, X., Müllen, K., Fischer, F., Zettl, A., Ruffieux, P., Yablonovitch, E., Crommie, M., Fasel, R., & Bokor, J.
Venue
Nature Communications
Published
2017-09-21
Volume
8
Issue
1
Pages
633-633
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2396500671
Cited by
391
References
24
FWCI
17.73
Type
journal article
Language
en
Open access
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CoChat. (2026). Citation check: Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. https://app.cochat.ai/papers/10.1038/s41467-017-00734-x
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Llinas, J. P., Fairbrother, A., Borin Barin, G., Shi, W., Lee, K., Wu, S., Yong Choi, B., Braganza, R., Lear, J., Kau, N., Choi, W., Chen, C., Pedramrazi, Z., Dumslaff, T., Narita, A., Feng, X., Müllen, K., Fischer, F., Zettl, A., . . . Bokor, J. (2017). Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. Nature Communications. https://doi.org/10.1038/s41467-017-00734-x

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.