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Cited by 334

The DOI matches its Crossref record; 44 of the 44 references it cites were found in a registry or an index.

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

Open access
Ciarrocchi, Alberto, Avsar, Ahmet, Ovchinnikov, Dmitry, Kis, Andras·2018·Nature Communications

Abstract

The possibility of tailoring physical properties by changing the number of layers in van der Waals crystals is one of the driving forces behind the emergence of two-dimensional materials. One example is bulk MoS 2, which changes from an indirect gap semiconductor to a direct bandgap semiconductor in the monolayer form. Here, we show a much bigger tuning range with a complete switching from a metal to a semiconductor in atomically thin PtSe 2 as its thickness is reduced. Crystals with a thickness of ~13 nm show metallic behavior with a contact resistance as low as 70 Ω·µm. As they are thinned down to 2.5 nm and below, we observe semiconducting behavior. In such thin crystals, we demonstrate ambipolar transport with a bandgap smaller than 2.2 eV and an on/off ratio of ~10 5. Our results demonstrate that PtSe 2 possesses an unusual behavior among 2D materials, enabling novel applications in nano and optoelectronics.

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Metadata

Authors
Ciarrocchi, A., Avsar, A., Ovchinnikov, D., & Kis, A.
Venue
Nature Communications
Published
2018-03-02
Volume
9
Issue
1
Pages
919-919
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2789630987
Cited by
334
References
44
FWCI
16.17
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide. https://app.cochat.ai/papers/10.1038/s41467-018-03436-0
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Ciarrocchi, A., Avsar, A., Ovchinnikov, D., & Kis, A. (2018). Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide. Nature Communications. https://doi.org/10.1038/s41467-018-03436-0

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