A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
Open accessAbstract
We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial 28 Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17 V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1 mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing.
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Device multiplexing using on-chip or off-chip circuitry comes with limitations in the wafer area that can be sampled.
“One solution is device multiplexing, using either on-chip31,32 or off-chip33 circuitry, but both approaches come with limitations in the wafer area that can be sampled.”
From Probing single electrons across 300-mm spin qubit wafers (2024) · cites this paper as [32]
Cites
Fast universal quantum gate above the fault-tolerance threshold in silicon
Noiri, A., Takeda, K., Nakajima, T., Kobayashi, T., Sammak, A., Scappucci, G., & Tarucha, S. (2022) · Nature · doi:10.1038/s41586-021-04182-y · Cited by 471 · see citing works
Self-citationShuttling a single charge across a one-dimensional array of silicon quantum dots
Mills, A. R., Zajac, D. M., Gullans, M. J., Schupp, F. J., Hazard, T. M., & Petta, J. R. (2019) · Nature Communications · doi:10.1038/s41467-019-08970-z · Cited by 283 · see citing works
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Probing single electrons across 300-mm spin qubit wafers
Neyens, S., Zietz, O. K., Watson, T. F., Luthi, F., Nethwewala, A., George, H. C., Henry, E., Islam, M., Wagner, A. J., Borjans, F., et al. (2024) · Nature · doi:10.1038/s41586-024-07275-6 · Cited by 147 · see citing works
“One solution is device multiplexing, using either on-chip 31,32 or off-chip 33 circuitry, but both approaches come with limitations in the wafer area that can be sampled.”
Self-citation
- Authors
- Bavdaz, P. L., Eenink, H. G. J., van Staveren, J., Lodari, M., Almudever, C. G., Clarke, J. S., Sebasatiano, F., Veldhorst, M., & Scappucci, G.
- Affiliations
- QuTech (NL)
- Intel (United States) (US)
- Corresponding author
- Scappucci, G.
- Venue
- npj Quantum Information
- Published
- 2022-07-20
- Volume
- 8
- Issue
- 1
- ISSN
- 2056-6387 (ISSN-L)
- OpenAlex
- W4221140895
- Cited by
- 18
- References
- 2
- Citations by year
- 2026: 5 · 2025: 3 · 2024: 5 · 2023: 5
- FWCI
- 1.33
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- npj Quantum Information (publishedVersion, cc-by)
- arXiv (Cornell University) (submittedVersion)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Research Repository (Delft University of Technology) (submittedVersion)
- Data Archiving and Networked Services (DANS) (submittedVersion, cc-by)
- arXiv (Cornell University)
- Funders
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek (16278)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- gate-defined quantum dots, cryogenic temperatures, interconnect scaling, threshold voltage, pinch-off voltage, tunnel barrier, semiconductor quantum computing
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