The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor
Open accessAbstract
Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a system by electric-field tuning has proven challenging1–4. Recently, atomically thin magnetic semiconductors have attracted significant attention due to their emerging new physical phenomena5–13. However, many issues are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these two-dimensional materials. Here, we show that, via electrostatic gating, a strong field effect can be observed in devices based on few-layered ferromagnetic semiconducting Cr2Ge2Te6. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate bipolar tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment rebalance in the spin-polarized band structure. Our findings of electric-field-controlled magnetism in van der Waals magnets show possibilities for potential applications in new-generation magnetic memory storage, sensors and spintronics.Few-layer semiconducting Cr2Ge2Te6 shows bipolar gate-tuned magnetism below its ferromagnetic Curie temperature.
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Cited by
Probing and controlling magnetic states in 2D layered magnetic materials
Mak, K. F., Shan, J., & Ralph, D. C. (2019) · Nature Reviews Physics · doi:10.1038/s42254-019-0110-y · Cited by 549
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Jiang, X., Liu, Q., Xing, J., Liu, N., Guo, Y., Liu, Z., & Zhao, J. (2021) · Applied Physics Reviews · doi:10.1063/5.0039979 · Cited by 445
Emergent phenomena and proximity effects in two-dimensional magnets and heterostructures
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Metadata
- Authors
- Wang, Z., Zhang, T., Ding, M., Dong, B., Li, Y., Chen, M., Li, X., Huang, J., Wang, H., Zhao, X., Li, Y., Li, D., Jia, C., Sun, L., Guo, H., Ye, Y., Sun, D., Chen, Y., Yang, T., Zhang, J., Ono, S., Han, Z., & Zhang, Z.
- Venue
- Nature Nanotechnology
- Published
- 2018-07
- Volume
- 13
- Issue
- 7
- Pages
- 554-559
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2788527476
- Cited by
- 613
- References
- 29
- FWCI
- 23.13
- Type
- journal article
- Language
- en
- Open access
- green
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- Wang, Z., Zhang, T., Ding, M., Dong, B., Li, Y., Chen, M., Li, X., Huang, J., Wang, H., Zhao, X., Li, Y., Li, D., Jia, C., Sun, L., Guo, H., Ye, Y., Sun, D., Chen, Y., Yang, T., . . . Zhang, Z. (2018). Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nature Nanotechnology. https://doi.org/10.1038/s41565-018-0186-z
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