Room-temperature valleytronic transistor
Abstract
Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal-oxide-semiconductor (CMOS) technology 1-4. Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature 4-7, demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae 8 are used to selectively generate valley-polarized carriers in MoS 2 through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration 9-11 even without charge current, and can propagate over 18 μm by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials.
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Valley-polarized charge transfer was observed in symmetry-broken light-matter interactions mediated by pseudo-chiral gold nanostructures on monolayer MoS2, with DC valley Hall currents demonstrated under bias voltages.
“Valley-polarized charge transfer, for instance, was observed in -broken light-matter interactions mediated by pseudo-chiral gold nanostructures on monolayer MoS2, with DC valley Hall currents demonstrated under bias voltages262”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [262]
Cites
Optical Constants of the Noble Metals
Johnson, P. B., & Christy, R. W. (1972) · Physical Review B · doi:10.1103/physrevb.6.4370 · Cited by 20,094 · see citing works
Control of valley polarization in monolayer MoS2 by optical helicity
Mak, K. F., He, K., Shan, J., & Heinz, T. F. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.96 · Cited by 4,053 · see citing works
Valley polarization in MoS2 monolayers by optical pumping
Zeng, H., Dai, J., Yao, W., Xiao, D., & Cui, X. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.95 · Cited by 3,705 · see citing works
Schaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652 · see citing works
Valley-selective circular dichroism of monolayer molybdenum disulphide
Cao, T., Wang, G., Han, W., Ye, H., Zhu, C., Shi, J., Niu, Q., Tan, P., Wang, E., Liu, B., et al. (2012) · Nature Communications · doi:10.1038/ncomms1882 · Cited by 2,611 · see citing works
Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
Xiao, D., Yao, W., & Niu, Q. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.236809 · Cited by 2,296 · see citing works
The valley Hall effect in MoS 2 transistors
Mak, K. F., McGill, K. L., Park, J., & McEuen, P. L. (2014) · Science · doi:10.1126/science.1250140 · Cited by 1,921 · see citing works
Optical Chirality and Its Interaction with Matter
Tang, Y., & Cohen, A. E. (2010) · Physical Review Letters · doi:10.1103/physrevlett.104.163901 · Cited by 1,281 · see citing works
Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
Rivera, P., Seyler, K. L., Yu, H., et al. (2016) · Science · doi:10.1126/science.aac7820 · Cited by 826 · see citing works
Electrically Switchable Chiral Light-Emitting Transistor
Zhang, Y., Oka, T., Suzuki, R., Ye, J. T., & Iwasa, Y. (2014) · Science · doi:10.1126/science.1251329 · Cited by 776 · see citing works
Large and Tunable Photothermoelectric Effect in Single-Layer MoS2
Buscema, M., Barkelid, M., Zwiller, V., van der Zant, H. S. J., Steele, G. A., & Castellanos-Gómez, A. (2013) · Nano Letters · doi:10.1021/nl303321g · Cited by 650 · see citing works
Control over topological insulator photocurrents with light polarization
McIver, J. W., Hsieh, D., Steinberg, H., Jarillo-Herrero, P., & Gedik, N. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2011.214 · Cited by 647 · see citing works
Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS 2
Mai, C., Barrette, A., Yu, Y., Semenov, Y. G., Kim, K. W., Cao, L., & Gündoğdu, K. (2013) · Nano Letters · doi:10.1021/nl403742j · Cited by 503 · see citing works
Electrical control of the valley Hall effect in bilayer MoS2 transistors
Lee, J., Mak, K. F., & Shan, J. (2016) · Nature Nanotechnology · doi:10.1038/nnano.2015.337 · Cited by 473 · see citing works
Shimazaki, Y., Yamamoto, M., Borzenets, I. V., Watanabe, K., Taniguchi, T., & Tarucha, S. (2015) · Nature Physics · doi:10.1038/nphys3551 · Cited by 446 · see citing works
Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2
Wang, G., Bouet, L., Lagarde, D., et al. (2014) · Physical Review B · doi:10.1103/physrevb.90.075413 · Cited by 416 · see citing works
Tailoring Enhanced Optical Chirality: Design Principles for Chiral Plasmonic Nanostructures
Schäferling, M., Drégely, D., Hentschel, M., & Giessen, H. W. (2012) · Physical Review X · doi:10.1103/physrevx.2.031010 · Cited by 413 · see citing works
Carrier and Polarization Dynamics in Monolayer MoS2
Lagarde, D., Bouet, L., Marie, X., Zhu, C., Liu, B., Amand, T., Tan, P., & Urbaszek, B. (2014) · Physical Review Letters · doi:10.1103/physrevlett.112.047401 · Cited by 406 · see citing works
Gate-tunable topological valley transport in bilayer graphene
Sui, M., Chen, G., Ma, L., Shan, W.-Y., Dai, T., Watanabe, K., Taniguchi, T., Jin, X., Yao, W., Xiao, D., et al. (2015) · Nature Physics · doi:10.1038/nphys3485 · Cited by 381 · see citing works
Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2
Yuan, H., Wang, X., Lian, B., Zhang, H., Fang, X., Shen, B., Xu, G., Xu, Y., Zhang, S.-C., Hwang, H. Y., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.183 · Cited by 373 · see citing works
Self-citationYe, Y., Xiao, J., Wang, H., Ye, Z., Zhu, H., Zhao, M., Wang, Y., Zhao, J., Yin, X., & Zhang, X. (2016) · Nature Nanotechnology · doi:10.1038/nnano.2016.49 · Cited by 336 · see citing works
Self-citationLong-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2
Yang, L., Sinitsyn, N. A., Chen, W., Yuan, J., Zhang, J., Lou, J., & Crooker, S. A. (2015) · Nature Physics · doi:10.1038/nphys3419 · Cited by 328 · see citing works
Field-induced polarization of Dirac valleys in bismuth
Zhu, Z., Collaudin, A., Fauqué, B., Kang, W., & Behnia, K. (2011) · Nature Physics · doi:10.1038/nphys2111 · Cited by 284 · see citing works
Imaging of pure spin-valley diffusion current in WS 2 -WSe 2 heterostructures
Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., et al. (2018) · Science · doi:10.1126/science.aao3503 · Cited by 223 · see citing works
Valley magnetoelectricity in single-layer MoS2
Lee, J., Wang, Z., Xie, H., Mak, K. F., & Shan, J. (2017) · Nature Materials · doi:10.1038/nmat4931 · Cited by 199 · see citing works
Separation of valley excitons in a MoS2 monolayer using a subwavelength asymmetric groove array
Sun, L., Wang, C., Krasnok, A., Choi, J., Shi, J., Gomez-Diaz, J. S., Zepeda, A., Gwo, S., Shih, C.-K. K., Alù, A., et al. (2019) · Nature Photonics · doi:10.1038/s41566-019-0348-z · Cited by 194 · see citing works
A valley valve and electron beam splitter
Li, J., Zhang, R.-X., Yin, Z., Zhang, J., Watanabe, K., Taniguchi, T., Liu, C., & Zhu, J. (2018) · Science · doi:10.1126/science.aao5989 · Cited by 170 · see citing works
Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field
Shkolnikov, Y. P., Poortere, E. P. D., Tutuc, E., & SHAYEGAN, M. (2002) · Physical Review Letters · doi:10.1103/physrevlett.89.226805 · Cited by 169 · see citing works
Howell, S. L., Jariwala, D., Wu, C.-C., et al. (2015) · Nano Letters · doi:10.1021/nl504311p · Cited by 165 · see citing works
Generation, transport and detection of valley-polarized electrons in diamond
Isberg, J., Gabrysch, M., Hammersberg, J., Majdi, S., Kovi, K. K., & Twitchen, D. J. (2013) · Nature Materials · doi:10.1038/nmat3694 · Cited by 165 · see citing works
Dichroic spin–valley photocurrent in monolayer molybdenum disulphide
Eginligil, M., Cao, B., Wang, Z., Shen, X., Cong, C., Shang, J., Soci, C., & Yu, T. (2015) · Nature Communications · doi:10.1038/ncomms8636 · Cited by 161 · see citing works
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
Sánchez, O. L., Ovchinnikov, D., Misra, S., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02527 · Cited by 159 · see citing works
Tailoring MoS2 Valley‐Polarized Photoluminescence with Super Chiral Near‐Field
Li, Z., Liu, C., Rong, X., Luo, Y., Cheng, H., Zheng, L., Lin, F., Shen, B., Gong, Y., Zhang, S., et al. (2018) · Advanced Materials · doi:10.1002/adma.201801908 · Cited by 135 · see citing works
Long-Lived Valley Polarization of Intravalley Trions in Monolayer WSe2
Singh, A., Tran, K., Kolarczik, M., et al. (2016) · Physical Review Letters · doi:10.1103/physrevlett.117.257402 · Cited by 134 · see citing works
Hot Electron Generation and Cathodoluminescence Nanoscopy of Chiral Split Ring Resonators
Fang, Y., Verre, R., Shao, L., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02154 · Cited by 112 · see citing works
Self-citationErmolaev, G. A., Yakubovsky, D. I., Stebunov, Y. V., et al. (2019) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.5122683 · Cited by 78 · see citing works
Wu, Z., Li, J., Zhang, X., Redwing, J. M., & Zheng, Y. (2019) · Advanced Materials · doi:10.1002/adma.201904132 · Cited by 70 · see citing works
Ubrig, N., Jo, S., Philippi, M., Costanzo, D., Berger, H., Kuzmenko, A. B., & Morpurgo, A. F. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b02666 · Cited by 63 · see citing works
Cha, S., Noh, M., Kim, J., Son, J., Bae, H., Lee, D., Kim, H., Lee, J., Shin, H.-S., Sim, S., et al. (2018) · Nature Nanotechnology · doi:10.1038/s41565-018-0195-y · Cited by 51 · see citing works
Ogier, R., Shao, L., Svedendahl, M., et al. (2016) · Advanced Materials · doi:10.1002/adma.201600112 · Cited by 37 · see citing works
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Ultrafast terahertz emission from emerging symmetry-broken materials
Pettine, J., Padmanabhan, P., Sirica, N., Prasankumar, R. P., Taylor, A. J., & Chen, H.-T. (2023) · Light: Science & Applications · doi:10.1038/s41377-023-01163-w · Cited by 81 · see citing works
- Authors
- Li, L., Shao, L., Liu, X., Gao, A., Wang, H., Zheng, B., Hou, G., Shehzad, K., Yu, L., Miao, F., Shi, Y., Xu, Y., & Wang, X.
- Affiliations
- State Key Laboratory of Modern Optical Instruments (CN)
- Beijing Computational Science Research Center (CN)
- Nanjing University (CN)
- Corresponding author
- Xu, Yang
- Wang, Xiaomu
- ORCID
- Venue
- Nature Nanotechnology
- Published
- 2020-07-20
- Volume
- 15
- Issue
- 9
- Pages
- 743-749
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W3042488171
- Cited by
- 161
- References
- 40
- Citations by year
- 2026: 26 · 2025: 26 · 2024: 26 · 2023: 31 · 2022: 26 · 2021: 23 · 2020: 3
- FWCI
- 8.07
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nature Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Funders
- National Science Foundation of China | National Natural Science Foundation of China-Yunnan Joint Fund (U1930402)
- National Science Foundation of China | Major Research Plan (61674127 61874094, 61775092)
- National Science Foundation of China | Key Programme (61934004)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
- Keywords
- valleytronics, MoS2, valley Hall effect, hot electron injection, electrostatic gating, Berry curvature dipole, infrared excitation
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