The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Ultrafast non-volatile flash memory based on van der Waals heterostructures
Open accessAbstract
Flash memory has become a ubiquitous solid-state memory device widely used in portable digital devices, computers and enterprise applications. The development of the information age has demanded improvements in memory speed and retention performance. Here we demonstrate an ultrafast non-volatile flash memory based on MoS2/hBN/multilayer graphene van der Waals heterostructures, which achieves an ultrafast writing/erasing speed of 20 ns through two-triangle-barrier modified Fowler–Nordheim tunnelling. Using detailed theoretical analysis and experimental verification, we postulate that a suitable barrier height, gate coupling ratio and clean interface are the main reasons for the breakthrough writing/erasing speed of our flash memory devices. Because of its non-volatility this ultrafast flash memory could provide the foundation for the next generation of high-speed non-volatile memory. MoS2/hBN/graphene van der Waals heterostructures with a clean interface and optimized barrier height and gate coupling ratio enable the realization of ultrafast non-volatile flash memory.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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MoS2transistors with 1-nanometer gate lengths
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Self-citationNonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
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Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
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Cited by
Pham, P. V., Bodepudi, S. C., Shehzad, K., Liu, Y., Xu, Y., Yu, B., & Duan, X. (2022) · Chemical Reviews · doi:10.1021/acs.chemrev.1c00735 · Cited by 708
Metadata
- Authors
- Liu, L., Liu, C., Jiang, L., Li, J., Ding, Y., Wang, S., Jiang, Y.-G., Sun, Y.-B., Wang, J., Chen, S., Zhang, D. W., & Zhou, P.
- Venue
- Nature Nanotechnology
- Published
- 2021-06-03
- Volume
- 16
- Issue
- 8
- Pages
- 874-881
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W3082776506
- Cited by
- 265
- References
- 29
- FWCI
- 12.01
- Type
- journal article
- Language
- en
- Open access
- green
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- Liu, L., Liu, C., Jiang, L., Li, J., Ding, Y., Wang, S., Jiang, Y.-G., Sun, Y.-B., Wang, J., Chen, S., Zhang, D. W., & Zhou, P. (2021). Ultrafast non-volatile flash memory based on van der Waals heterostructures. Nature Nanotechnology. https://doi.org/10.1038/s41565-021-00921-4
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