The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Self-citationKim, K.-H., Gaba, S., Wheeler, D., Cruz-Albrecht, J. M., Hussain, T., Srinivasa, N., & Lu, W. (2012) · Nano Letters · doi:10.1021/nl203687n · Cited by 924 · cited 1×
“For example, scaling up the crossbar to M = N = 100 should be relatively straightforward for the considered PUF circuits 43,44 given that the requirements for the memristors, especially the requirement for device-to-device variation, are more relaxed than those for digital or analogue computing…”
BackgroundHigh precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
Alibart, F., Gao, L., Hoskins, B. D., & Strukov, D. B. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/7/075201 · Cited by 557 · cited 2×
“40 The goal of the tuning procedure is to enhance the contribution of the devices’ I–”
BackgroundMethodSelf-citation3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications
Adam, G. C., Hoskins, B. D., Prezioso, M., Merrikh-Bayat, F., Chakrabarti, B., & Strukov, D. B. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2630925 · Cited by 234 · cited 1×
“(The fabrication steps are similar to those described in our earlier report 39 and are explained in more detail in Supplementary Section 1.)”
MethodSelf-citation
Cited by
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
From molecular to supramolecular electronics
Chen, H., & Fraser Stoddart, J. (2021) · Nature Reviews Materials · doi:10.1038/s41578-021-00302-2 · Cited by 380
Mehonic, A., Sebastian, A., Rajendran, B., Simeone, O., Vasilaki, E., & Kenyon, A. J. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000085 · Cited by 331
In situ training of feed-forward and recurrent convolutional memristor networks
Wang, Z., Li, C., Lin, P., Rao, M., Nie, Y., Song, W., Qiu, Q., Li, Y., Yan, P., Strachan, J. P., et al. (2019) · Nature Machine Intelligence · doi:10.1038/s42256-019-0089-1 · Cited by 307
Metadata
- Authors
- Nili, H., Adam, G. C., Hoskins, B., Prezioso, M., Kim, J., Mahmoodi, M. R., Bayat, F. M., Kavehei, O., & Strukov, D. B.
- Venue
- Nature Electronics
- Published
- 2018-03-09
- Volume
- 1
- Issue
- 3
- Pages
- 197-202
- ISSN
- 2520-1131 (ISSN-L)
- OpenAlex
- W2793600158
- Cited by
- 227
- References
- 5
- FWCI
- 26.61
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors. https://app.cochat.ai/papers/10.1038/s41928-018-0039-7
- The paper
- Nili, H., Adam, G. C., Hoskins, B., Prezioso, M., Kim, J., Mahmoodi, M. R., Bayat, F. M., Kavehei, O., & Strukov, D. B. (2018). Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors. Nature Electronics. https://doi.org/10.1038/s41928-018-0039-7
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.