Higher-order band topology

Abstract

A conventional topological insulator (TI) has gapped bulk states but gapless edge states. The emergence of the gapless edge states is dictated by the bulk topological invariant of the insulator and the preservation of relevant symmetries. Over the past four years, a new type of TI has been found, which hosts gapless hinge or corner states, rather than edge states. These unconventional TIs, termed higher-order TIs (HOTIs), are common among crystalline and quasi-crystalline materials. Higher-order band topology expands our previous understanding of topological phases and provides unprecedented lower-dimensional boundary states for devices. Here, we review the principles, theories and experimental realizations of HOTIs for both electrons and classical waves. There is an emphasis on the development of HOTIs in photonic, phononic and circuit systems owing to their special contributions to these fields. From these discussions, we remark on trends and challenges in the field and the impact of higher-order band topology on other scientific disciplines. The recent discovery of higher-order band topology in topological insulators has unveiled the hierarchical structure of topological band theory. This Perspective reviews this rapidly developing field and discusses future directions, including open challenges, future trends, synergy and its use in other fields and potential applications.