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2D transition metal dichalcogenides

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Manzeli, Sajedeh, Ovchinnikov, Dmitry, Pasquier, Diego, Yazyev, Oleg V., Kis, Andras·2017·Nature Reviews Materials
DOI 10.1038/natrevmats.2017.33
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  1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011). · DOI · Paper page
  2. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010). · DOI · Paper page
  3. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010). · DOI · Paper page
  4. Dickinson, R. G. & Pauling, L. The crystal structure of molybdenite. J. Am. Chem. Soc. 45, 1466–1471 (1923). · DOI · Paper page
  5. Wilson, J. A. & Yoffe, A. D. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 18, 193–335 (1969). · DOI · Paper page
  6. Frindt, R. F. & Yoffe, A. D. Physical properties of layer structures: optical properties and photoconductivity of thin crystals of molybdenum disulphide. Proc. R. Soc. A 273, 69–83 (1963). · DOI · Paper page
  7. Joensen, P., Frindt, R. F. & Morrison, S. R. Single-layer MoS2 . Mater. Res. Bull. 21, 457–461 (1986). · DOI · Paper page
  8. Tenne, R., Margulis, L., Genut, M. & Hodes, G. Polyhedral and cylindrical structures of tungsten disulfide. Nature 360, 444–446 (1992). · DOI · Paper page
  9. Feldman, Y., Wasserman, E., Srolovitz, D. J. & Tenne, R. High-rate, gas-phase growth of MoS2 nested inorganic fullerenes and nanotubes. Science 267, 222–225 (1995). · DOI · Paper page
  10. Koppens, F. H. L. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9, 780–793 (2014). · DOI · Paper page
  11. Hill, H. M., Rigosi, A. F., Rim, K. T., Flynn, G. W. & Heinz, T. F. Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy. Nano Lett. 16, 4837–4837 (2016). · DOI · Paper page
  12. Zhu, Z. Y., Cheng, Y. C. & Schwingenschlögl, U. Giant spin–orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011). · DOI · Paper page
  13. Andor, K. et al. k · p theory for two-dimensional transition metal dichalcogenide semiconductors. 2D Mater. 2, 2053–1583 (2015).
  14. Xiao, D., Liu, G.-B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012). · DOI · Paper page
  15. Pulkin, A. & Yazyev, O. V. Spin- and valley-polarized transport across line defects in monolayer MoS2 . Phys. Rev. B 93, 041419 (2016). · doi:10.1103/physrevb.93.041419
  16. Habe, T. & Koshino, M. Spin-dependent refraction at the atomic step of transition-metal dichalcogenides. Phys. Rev. B 91, 201407 (2015). · DOI
  17. Peierls, S. R. E. Quantum Theory of Solids (Clarendon Press, 1955).
  18. Frohlich, H. On the theory of superconductivity: the one-dimensional case. Proc. R. Soc. A 223, 305 (1954).
  19. Chan, S.-K. & Heine, V. Spin density wave and soft phonon mode from nesting Fermi surfaces. J. Phys. F Met. Phys. 3, 795–809 (1973). · DOI · Paper page
  20. Lomer, W. M. Electronic structure of chromium group metals. Proc. Phys. Soc. 80, 489–496 (1962). · doi:10.1088/0370-1328/80/2/316
  21. Wilson, J. A., Di Salvo, F. J. & Mahajan, S. Charge-density waves in metallic, layered, transition-metal dichalcogenides. Phys. Rev. Lett. 37, C4-139–C4-150 (1974).
  22. Wilson, J. A., Di Salvo, F. J. & Mahajan, S. Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides. Adv. Phys. 50, 1171–1248 (2010). · DOI
  23. Moncton, D. E., Axe, J. D. & Di Salvo, F. J. Neutron scattering study of the charge-density wave transitions in 2H-TaSe2 and 2H-NbSe2 . Phys. Rev. B 16, 801–819 (1977). · DOI · Paper page
  24. Di Salvo, J., Francis, J. & Rice, T. M. Charge-density waves in transition-metal compounds. Phys. Today 32, 32–38 (1979). · doi:10.1063/1.2995488
  25. Revolinsky, E., Spiering, G. A. & Beerntsen, D. J. Superconductivity in the niobium–selenium system. J. Phys. Chem. Solids 26, 1029–1034 (1965). · doi:10.1016/0022-3697(65)90190-3
  26. Perfetti, L., Gloor, T. A., Mila, F., Berger, H. & Grioni, M. Unexpected periodicity in the quasi-two-dimensional Mott insulator 1T-TaS2 revealed by angle-resolved photoemission. Phys. Rev. B 71, 153101 (2005). · doi:10.1103/physrevb.71.153101
  27. Sipos, B. et al. From Mott state to superconductivity in 1T-TaS2 . Nat. Mater. 7, 960–965 (2008). · DOI · Paper page
  28. Calandra, M. 2D materials: charge density waves go nano. Nat. Nanotechnol. 10, 737–738 (2015). · doi:10.1038/nnano.2015.167
  29. Calandra, M., Mazin, I. I. & Mauri, F. Effect of dimensionality on the charge-density wave in few-layer 2H-NbSe2 . Phys. Rev. B 80, 241108 (2009). · doi:10.1103/physrevb.80.241108
  30. Xi, X. et al. Strongly enhanced charge-density-wave order in monolayer NbSe2 . Nat. Nanotechnol. 10, 765–769 (2015). · DOI · Paper page
  31. Ugeda, M. M. et al. Characterization of collective ground states in single-layer NbSe2 . Nat. Phys. 12, 92–97 (2016). · DOI · Paper page
  32. Ge, Y. & Liu, A. Y. Effect of dimensionality and spin–orbit coupling on charge-density-wave transition in 2H-TaSe2 . Phys. Rev. B 86, 104101 (2012). · DOI
  33. Yu, Y. et al. Gate-tunable phase transitions in thin flakes of 1T-TaS2 . Nat. Nanotechnol. 10, 270–276 (2015). · DOI · Paper page
  34. Hovden, R. et al. Atomic lattice disorder in charge-density-wave phases of exfoliated dichalcogenides (1T-TaS2). Proc. Natl Acad. Sci. USA 113, 11424 (2016). · doi:10.1073/pnas.1606044113
  35. Albertini, O. R. et al. Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS2: detection of the commensurate charge density wave phase through Raman scattering. Phys. Rev. B 93, 214109 (2016). · doi:10.1103/physrevb.93.214109
  36. Sugawara, K. et al. Unconventional charge-density-wave transition in monolayer 1T-TiSe2 . ACS Nano 10, 1341–1345 (2016). · DOI
  37. Chen, P. et al. Dimensional effects on the charge density waves in ultrathin films of TiSe2 . Nano Lett. 16, 6331–6336 (2016). · doi:10.1021/acs.nanolett.6b02710
  38. Kohn, W. Excitonic phases. Phys. Rev. Lett. 19, 439–442 (1967). · DOI · Paper page
  39. Jérome, D., Rice, T. M. & Kohn, W. Excitonic insulator. Phys. Rev. 158, 462–475 (1967). · doi:10.1103/physrev.158.462
  40. Guillamón, I. et al. Superconducting density of states and vortex cores of 2H-NbS2 . Phys. Rev. Lett. 101, 166407 (2008). · doi:10.1103/physrevlett.101.166407
  41. Valla, T. et al. Charge-density-wave-induced modifications to the quasiparticle self-energy in 2H-TaSe2 . Phys. Rev. Lett. 85, 4759–4762 (2000). · doi:10.1103/physrevlett.85.4759
  42. Nagata, S. et al. Superconductivity in the layered compound 2H-TaS2 . J. Phys. Chem. Solids 53, 1259–1263 (1992). · DOI
  43. Freitas, D. C. et al. Strong enhancement of superconductivity at high pressures within the charge-density-wave states of 2H-TaS2 and 2H-TaSe2 . Phys. Rev. B 93, 184512 (2016). · DOI
  44. Kusmartseva, A. F., Sipos, B., Berger, H., Forró, L. & Tutiš, E. Pressure induced superconductivity in pristine 1T-TiSe2 . Phys. Rev. Lett. 103, 236401 (2009). · DOI · Paper page
  45. Wagner, K. E. et al. Tuning the charge density wave and superconductivity in CuxTaS2 . Phys. Rev. B 78, 104520 (2008). · DOI
  46. Yang, J. J. et al. Charge-orbital density wave and superconductivity in the strong spin-orbit coupled IrTe2:Pd. Phys. Rev. Lett. 108, 116402 (2012). · DOI · Paper page
  47. Kosterlitz, J. M. & Thouless, D. J. Ordering, metastability and phase transitions in two-dimensional systems. J. Phys. C Solid State Phys. 6, 1181–1203 (1973). · DOI · Paper page
  48. Xi, X. et al. Ising pairing in superconducting NbSe2 atomic layers. Nat. Phys. 12, 139–143 (2016). · DOI · Paper page
  49. Lu, J. M. et al. Evidence for two-dimensional Ising superconductivity in gated MoS2 . Science 350, 1353–1357 (2015). · doi:10.1126/science.aab2277
  50. He, W.-Y., Zhou, B. T., He, J. J., Zhang, T. & Law, K. T. Nodal topological superconductivity in monolayer NbSe2. Preprint at ArXivhttps://arxiv.org/abs/1604.02867 (2016).
  51. Sharma, G. & Tewari, S. Yu-Shiba-Rusinov states and topological superconductivity in Ising paired superconductors. Phys. Rev. B 94, 094515 (2016). · DOI
  52. Zhou, B. T., Yuan, N. F. Q., Jiang, H.-L. & Law, K. T. Ising superconductivity and Majorana fermions in transition-metal dichalcogenides. Phys. Rev. B 93, 180501 (2016). · DOI
  53. Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193–1196 (2012). · DOI · Paper page
  54. Costanzo, D., Jo, S., Berger, H. & Morpurgo, A. F. Gate-induced superconductivity in atomically thin MoS2 crystals. Nat. Nanotechnol. 11, 339–344 (2016). · DOI · Paper page
  55. Shi, W. et al. Superconductivity series in transition metal dichalcogenides by ionic gating. Sci. Rep. 5, 12534 (2015). · DOI · Paper page
  56. Jo, S., Costanzo, D., Berger, H. & Morpurgo, A. F. Electrostatically induced superconductivity at the surface of WS2 . Nano Lett. 15, 1197–1202 (2015). · DOI
  57. Hasan, M. Z. & Kane, C. L. Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045–3067 (2010). · DOI · Paper page
  58. Knez, I., Du, R.-R. & Sullivan, G. Evidence for helical edge modes in inverted InAs/GaSb quantum wells. Phys. Rev. Lett. 107, 136603 (2011). · DOI · Paper page
  59. Sabater, C. et al. Topologically protected quantum transport in locally exfoliated bismuth at room temperature. Phys. Rev. Lett. 110, 176802 (2013). · DOI
  60. Drozdov, I. K. et al. One-dimensional topological edge states of bismuth bilayers. Nat. Phys. 10, 664–669 (2014). · DOI · Paper page
  61. Pletikosic´, I., Ali, M. N., Fedorov, A. V., Cava, R. J. & Valla, T. Electronic structure basis for the extraordinary magnetoresistance in WTe2 . Phys. Rev. Lett. 113, 216601 (2014). · DOI · Paper page
  62. Wang, Z. et al. MoTe2: a type-II Weyl topological metal. Phys. Rev. Lett. 117, 056805 (2016). · DOI · Paper page
  63. Sun, Y., Wu, S.-C., Ali, M. N., Felser, C. & Yan, B. Prediction of Weyl semimetal in orthorhombic MoTe2 . Phys. Rev. B 92, 161107 (2015). · DOI · Paper page
  64. Tamai, A. et al. Fermi arcs and their topological character in the candidate type-II Weyl semimetal MoTe2 . Phys. Rev. X 6, 031021 (2016).
  65. Huang, Y. - Preparation, S. Electrical and modulation optical properties of 2H-MoSe2 . Chin. J. Phys. 22, 43–53 (1984).
  66. Schäfer, H. Chemical transport reactions. (Academic Press, 1964).
  67. Benameur, M. M. et al. Visibility of dichalcogenide nanolayers. Nanotechnology 22, 125706 (2011). · DOI · Paper page
  68. Coleman, J. N. et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331, 568–571 (2011). · DOI · Paper page
  69. Nicolosi, V., Chhowalla, M., Kanatzidis, M. G., Strano, M. S. & Coleman, J. N. Liquid exfoliation of layered materials. Science 340, 1226419 (2013). · DOI · Paper page
  70. Dines, M. B. Lithium intercalation via n-Butyllithium of the layered transition metal dichalcogenides. Mater. Res. Bull. 10, 287–291 (1975). · DOI · Paper page
  71. Eda, G. et al. Photoluminescence from chemically exfoliated MoS2 . Nano Lett. 11, 5111–5116 (2011). · DOI · Paper page
  72. Zeng, Z. et al. Single-layer semiconducting nanosheets: high-yield preparation and device fabrication. Angew. Chem. Int. Ed. 50, 11093–11097 (2011). · DOI · Paper page
  73. Gordon, R. A., Yang, D., Crozier, E. D., Jiang, D. T. & Frindt, R. F. Structures of exfoliated single layers of WS2, MoS2, and MoSe2 in aqueous suspension. Phys. Rev. B 65, 125407 (2002). · DOI · Paper page
  74. Kappera, R. et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13, 1128–1134 (2014). · DOI · Paper page
  75. Joyce, B. A. Molecular beam epitaxy. Rep. Prog. Phys. 48, 1637–1697 (1985). · doi:10.1088/0034-4885/48/12/002
  76. Koma, A. & Yoshimura, K. Ultrasharp interfaces grown with van der waals epitaxy. Surf. Sci. 174, 556–560 (1986). · doi:10.1016/0039-6028(86)90471-1
  77. Ohuchi, F. S., Shimada, T., Parkinson, B. A., Ueno, K. & Koma, A. Growth of MoSe2 thin-films with Van der Waals epitaxy. J. Cryst. Growth 111, 1033–1037 (1991). · doi:10.1016/0022-0248(91)91127-v
  78. Ohuchi, F. S., Parkinson, B. A., Ueno, K. & Koma, A. Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2 . J. Appl. Phys. 68, 2168–2175 (1990). · DOI
  79. Koma, A. Van der Waals epitaxy for highly lattice-mismatched systems. J. Cryst. Growth 201–202, 236–241 (1999). · DOI · Paper page
  80. Dumcenco, D. et al. Large-area epitaxial monolayer MoS2 . ACS Nano 9, 4611–4620 (2015). · DOI · Paper page
  81. Lehtinen, O. et al. Atomic scale microstructure and properties of Se-deficient two-dimensional MoSe2 . ACS Nano 9, 3274–3283 (2015). · DOI · Paper page
  82. Roy, A. et al. Structural and electrical properties of MoTe2 and MoSe2 grown by molecular beam epitaxy. ACS Appl. Mater. Interfaces 8, 7396–7402 (2016). · DOI
  83. Ugeda, M. M. et al. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. Nat. Mater. 13, 1091–1095 (2014). · DOI · Paper page
  84. Barja, S. et al. Charge density wave order in 1D mirror twin boundaries of single-layer MoSe2 . Nat. Phys. 12, 751–756 (2016). · DOI · Paper page
  85. Aretouli, K. E. et al. Epitaxial 2D SnSe2/ 2D WSe2 van der Waals heterostructures. ACS Appl. Mater. Interfaces 8, 23222–23229 (2016). · doi:10.1021/acsami.6b02933
  86. Xenogiannopoulou, E. et al. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale 7, 7896–7905 (2015). · DOI
  87. Vishwanath, S. et al. Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene. 2D Mater. 2, 024007 (2015). · DOI
  88. Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966–971 (2012). · DOI · Paper page
  89. Liu, K.-K. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538–1544 (2012). · DOI · Paper page
  90. Shi, Y. et al. Van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 12, 2784–2791 (2012). · DOI · Paper page
  91. Lee, Y.-H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320–2325 (2012). · DOI · Paper page
  92. Najmaei, S. et al. Vapor phase growth and grain boundary structure of molybdenum disulfide atomic layers. Nat. Mater. 12, 754–759 (2013). · DOI · Paper page
  93. van der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554–561 (2013). · DOI · Paper page
  94. Zou, X., Liu, Y. & Yakobson, B. I. Predicting dislocations and grain boundaries in two-dimensional metal-disulfides from the first principles. Nano Lett. 13, 253–258 (2012). · DOI · Paper page
  95. Najmaei, S. et al. Electrical transport properties of polycrystalline monolayer molybdenum disulfide. ACS Nano 8, 7930–7937 (2014). · DOI
  96. Chung, J.-W., Dai, Z. R. & Ohuchi, F. S. WS2 thin films by metal organic chemical vapor deposition. J. Cryst. Growth 186, 137–150 (1998). · doi:10.1016/s0022-0248(97)00479-x
  97. Dumcenco, D. et al. Large-area MoS2 grown using H2S as the sulphur source. 2D Mater. 2, 044005 (2015). · DOI
  98. Eichfeld, S. M. et al. Highly scalable, atomically thin WSe2 grown via metal–organic chemical vapor deposition. ACS Nano 9, 2080–2087 (2015). · DOI · Paper page
  99. Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015). · DOI · Paper page
  100. Wang, X. et al. Chemical vapor deposition growth of crystalline monolayer MoSe2 . ACS Nano 8, 5125–5131 (2014). · DOI · Paper page
  101. Chang, Y.-H. et al. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano 8, 8582–8590 (2014). · DOI · Paper page
  102. Gao, Y. et al. Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils. Nat. Commun. 6, 8569 (2015). · DOI · Paper page
  103. Kobayashi, Y. et al. Growth and optical properties of high-quality monolayer WS2 on graphite. ACS Nano 9, 4056–4063 (2015). · DOI · Paper page
  104. McCreary, K. M., Hanbicki, A. T., Jernigan, G. G., Culbertson, J. C. & Jonker, B. T. Synthesis of large-area WS2 monolayers with exceptional photoluminescence. Sci. Rep. 6, 19159 (2016). · DOI · Paper page
  105. Okada, M. et al. Direct chemical vapor deposition growth of WS2 atomic layers on hexagonal boron nitride. ACS Nano 8, 8273–8277 (2014). · DOI · Paper page
  106. Tan, H. et al. Ultrathin 2D photodetectors utilizing chemical vapor deposition grown WS2 with graphene electrodes. ACS Nano 10, 7866–7873 (2016). · DOI · Paper page
  107. Tanabe, I. et al. Band structure characterization of WS2 grown by chemical vapor deposition. Appl. Phys. Lett. 108, 252103 (2016). · doi:10.1063/1.4954278
  108. Zhang, Y. et al. Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary. ACS Nano 7, 8963–8971 (2013). · DOI · Paper page
  109. Chen, J. et al. Chemical vapor deposition of large-sized hexagonal WSe2 crystals on dielectric substrates. Adv. Mater. 27, 6722–6727 (2015). · DOI · Paper page
  110. Liu, B. et al. Chemical vapor deposition growth of monolayer WSe2 with tunable device characteristics and growth mechanism study. ACS Nano 9, 6119–6127 (2015). · DOI · Paper page
  111. Yoshida, M. et al. Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals. Nano Lett. 16, 2061–2065 (2016). · DOI
  112. Keyshar, K. et al. Chemical vapor deposition of monolayer rhenium disulfide (ReS2). Adv. Mater. 27, 4640–4648 (2015). · DOI · Paper page
  113. He, X. et al. Chemical vapor deposition of high-quality and atomically layered ReS2 . Small 11, 5423–5429 (2015). · DOI
  114. Hafeez, M., Gan, L., Li, H., Ma, Y. & Zhai, T. Large-area bilayer ReS2 film/multilayer ReS2 flakes synthesized by chemical vapor deposition for high performance photodetectors. Adv. Funct. Mater. 26, 4551–4560 (2016). · DOI · Paper page
  115. Hafeez, M., Gan, L., Li, H., Ma, Y. & Zhai, T. Chemical vapor deposition synthesis of ultrathin hexagonal ReSe2 flakes for anisotropic raman property and optoelectronic application. Adv. Mater. 28, 8296–8301 (2016). · DOI · Paper page
  116. Naylor, C. H. et al. Monolayer single-crystal 1T′-MoTe2 grown by chemical vapor deposition exhibits weak antilocalization effect. Nano Lett. 16, 4297–4304 (2016). · DOI · Paper page
  117. Zhou, J. et al. Large-area and high-quality 2D transition metal telluride. Adv. Mat. 29, 1603471 (2017). · DOI · Paper page
  118. Duan, X. et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol. 9, 1024–1030 (2014). · DOI · Paper page
  119. Huang, C. et al. Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors. Nat. Mater. 13, 1096–1101 (2014). · DOI · Paper page
  120. Gong, Y. et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 13, 1135–1142 (2014). · DOI · Paper page
  121. Li, M.-Y. et al. Epitaxial growth of a monolayer WSe2–MoS2 lateral p–n junction with an atomically sharp interface. Science 349, 524–528 (2015). · DOI · Paper page
  122. Yu, H., Kutana, A. & Yakobson, B. I. Carrier delocalization in two-dimensional coplanar p–n junctions of graphene and metal dichalcogenides. Nano Lett. 16, 5032–5036 (2016). · DOI
  123. Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012). · DOI · Paper page
  124. Kaasbjerg, K., Thygesen, K. S. & Jauho, A.-P. Acoustic phonon limited mobility in two-dimensional semiconductors: deformation potential and piezoelectric scattering in monolayer MoS2 from first principles. Phys. Rev. B 87, 235312 (2013). · DOI · Paper page
  125. Zhang, W., Huang, Z., Zhang, W. & Li, Y. Two-dimensional semiconductors with possible high room temperature mobility. Nano Res. 7, 1731–1737 (2014). · DOI · Paper page
  126. Li, X. et al. Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles. Phys. Rev. B 87, 115418 (2013). · DOI · Paper page
  127. Ma, N. & Jena, D. Charge scattering and mobility in atomically thin semiconductors. Phys. Rev. X 4, 011043 (2014).
  128. Fivaz, R. & Mooser, E. Mobility of charge carriers in semiconducting layer structures. Phys. Rev. 163, 743–755 (1967). · DOI · Paper page
  129. Radisavljevic, B. & Kis, A. Mobility engineering and a metal–insulator transition in monolayer MoS2 . Nat. Mater. 12, 815–820 (2013). · DOI · Paper page
  130. Baugher, B. W. H., Churchill, H. O. H., Yang, Y. & Jarillo-Herrero, P. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2 . Nano Lett. 13, 4212–4216 (2013). · DOI · Paper page
  131. Yu, Z. et al. Realization of room-temperature phonon-limited carrier transport in monolayer MoS2 by dielectric and carrier screening. Adv. Mater. 28, 547–552 (2016). · DOI · Paper page
  132. Chamlagain, B. et al. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-c substrate. ACS Nano 8, 5079–5088 (2014). · DOI · Paper page
  133. Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534–540 (2015). · DOI · Paper page
  134. Bertolazzi, S., Krasnozhon, D. & Kis, A. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 7, 3246–3252 (2013). · DOI · Paper page
  135. Iqbal, M. W. et al. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films. Sci. Rep. 5, 10699 (2015). · doi:10.1038/srep10699
  136. Xu, S. et al. Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides. 2D Mater. 3, 021007 (2016). · doi:10.1088/2053-1583/3/2/021007
  137. Ovchinnikov, D., Allain, A., Huang, Y.-S., Dumcenco, D. & Kis, A. Electrical transport properties of single-layer WS2 . ACS Nano 8, 8174–8181 (2014). · DOI · Paper page
  138. Fallahazad, B. et al. Shubnikov-de Haas oscillations of high-mobility holes in monolayer and bilayer WSe2: Landau level degeneracy, effective mass, and negative compressibility. Phys. Rev. Lett. 116, 086601 (2016). · DOI · Paper page
  139. Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010). · DOI · Paper page
  140. Wu, Y. et al. State-of-the-art graphene high-frequency electronics. Nano Lett. 12, 3062–3067(2012). · DOI · Paper page
  141. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011). · DOI · Paper page
  142. Krasnozhon, D., Lembke, D., Nyffeler, C., Leblebici, Y. & Kis, A. MoS2 transistors operating at gigahertz frequencies. Nano Lett. 14, 5905–5911 (2014). · DOI · Paper page
  143. Krasnozhon, D., Dutta, S., Nyffeler, C., Leblebici, Y. & Kis, A. High-frequency, scaled MoS2 transistors. IEEE Int. Electron Devices Meet.http://dx.doi.org/10.1109/IEDM.2015.7409781 (2015). · doi:10.1109/iedm.2015.7409781
  144. Cheng, R. et al. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014). · DOI · Paper page
  145. Chang, H.-Y. et al. Large-area monolayer MoS2 for flexible low-power RF nanoelectronics in the GHz regime. Adv. Mater. 28, 1818–1823 (2015). · DOI
  146. Sun, L. et al. 12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics. Small 6, 2553–2557 (2010). · DOI
  147. Wang, C. et al. Self-aligned, extremely high frequency III–V metal–oxide-semiconductor field-effect transistors on rigid and flexible substrates. Nano Lett. 12, 4140–4145 (2012). · DOI
  148. Bertolazzi, S., Brivio, J. & Kis, A. Stretching and breaking of ultrathin MoS2 . ACS Nano 5, 9703–9709 (2011). · DOI · Paper page
  149. Ni, Z. H. et al. Uniaxial strain on graphene: raman spectroscopy study and band-gap opening. ACS Nano 2, 2301–2305 (2008). · DOI · Paper page
  150. Pereira, V. M., Castro Neto, A. H. & Peres, N. M. R. Tight-binding approach to uniaxial strain in graphene. Phys. Rev. B 80, 045401 (2009). · DOI · Paper page
  151. Johari, P. & Shenoy, V. B. Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. ACS Nano 6, 5449–5456 (2012). · DOI · Paper page
  152. Yue, Q. et al. Mechanical and electronic properties of monolayer MoS2 under elastic strain. Phys. Lett. A 376, 1166–1170 (2012). · DOI · Paper page
  153. Shi, H., Pan, H., Zhang, Y.-W. & Yakobson, B. I. Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2 . Phys. Rev. B 87, 155304 (2013). · DOI · Paper page
  154. Dong, L., Namburu, R. R., O’Regan, T. P., Dubey, M. & Dongare, A. M. Theoretical study on strain-induced variations in electronic properties of monolayer MoS2 . J. Mater. Sci. 49, 6762–6771 (2014). · doi:10.1007/s10853-014-8370-5
  155. Ghorbani-Asl, M., Borini, S., Kuc, A. & Heine, T. Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides. Phys. Rev. B 87, 235434 (2013). · DOI · Paper page
  156. Harada, N., Sato, S. & Yokoyama, N. Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel. J. Appl. Phys. 115, 034505 (2014). · doi:10.1063/1.4861726
  157. Horzum, S. et al. Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2 . Phys. Rev. B 87, 125415 (2013). · DOI · Paper page
  158. Lu, P., Wu, X., Guo, W. & Zeng, X. C. Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes. Phys. Chem. Chem. Phys. 14, 13035–13040 (2012). · DOI · Paper page
  159. Scalise, E., Houssa, M., Pourtois, G., Afanas′ev, V. V. & Stesmans, A. First-principles study of strained 2D MoS2 . Phys. E 56, 416–421 (2014). · DOI
  160. Wang, L., Kutana, A. & Yakobson, B. I. Many-body and spin–orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2: direct-indirect band gap transition in strained monolayer MoS2 and WS2 . Ann. Phys. 526, L7–L12 (2014). · doi:10.1002/andp.201400098
  161. Kumar, A. & Ahluwalia, P. K. Mechanical strain dependent electronic and dielectric properties of two-dimensional honeycomb structures of MoX2 (X = S, Se, Te). Phys. B (Amsterdam, Neth.) 419, 66–75 (2013). · doi:10.1016/j.physb.2013.03.029
  162. Bhattacharyya, S., Pandey, T. & Singh, A. K. Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2 . Nanotechnology 25, 465701 (2014). · doi:10.1088/0957-4484/25/46/465701
  163. Zhu, L. et al. Thermal conductivity of biaxial-strained MoS2: sensitive strain dependence and size-dependent reduction rate. Nanotechnology 26, 465707 (2015). · DOI
  164. Rostami, H., Roldán, R., Cappelluti, E., Asgari, R. & Guinea, F. Theory of strain in single-layer transition metal dichalcogenides. Phys. Rev. B 92, 195402 (2015). · DOI · Paper page
  165. Cheiwchanchamnangij, T., Lambrecht, W. R. L., Song, Y. & Dery, H. Strain effects on the spin–orbit-induced band structure splittings in monolayer MoS2 and graphene. Phys. Rev. B 88, 155404 (2013). · DOI
  166. Koskinen, P., Fampiou, I. & Ramasubramaniam, A. Density-functional tight-binding simulations of curvature-controlled layer decoupling and band-gap tuning in bilayer MoS2 . Phys. Rev. Lett. 112, 186802 (2014). · doi:10.1103/physrevlett.112.186802
  167. Sengupta, A., Ghosh, R. K. & Mahapatra, S. Performance analysis of strained monolayer MoS2 MOSFET. IEEE Trans. Electron. Devices 60, 2782–2787 (2013). · doi:10.1109/ted.2013.2273456
  168. Mohammad Tabatabaei, S., Noei, M., Khaliji, K., Pourfath, M. & Fathipour, M. A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor. J. Appl. Phys. 113, 163708 (2013). · doi:10.1063/1.4803032
  169. Feng, J., Qian, X., Huang, C.-W. & Li, J. Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat. Photonics 6, 866–872 (2012). · DOI · Paper page
  170. Kumar, H., Er, D., Dong, L., Li, J. & Shenoy, V. B. Elastic deformations in 2D van der waals heterostructures and their impact on optoelectronic properties: predictions from a multiscale computational approach. Sci. Rep. 5, 10872 (2015). · DOI
  171. Sharma, M., Kumar, A., Ahluwalia, P. K. & Pandey, R. Strain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides. J. Appl. Phys. 116, 063711 (2014). · doi:10.1063/1.4892798
  172. Yu, S. et al. Strain-engineering the anisotropic electrical conductance in ReS2 monolayer. Appl. Phys. Lett. 108, 191901 (2016). · DOI
  173. Manzeli, S., Allain, A., Ghadimi, A. & Kis, A. Piezoresistivity and strain-induced band gap tuning in atomically thin MoS2 . Nano Lett. 15, 5330–5335 (2015). · DOI · Paper page
  174. Zhu, H. et al. Observation of piezoelectricity in free-standing monolayer MoS2 . Nat. Nanotechnol. 10, 151–155 (2015). · DOI · Paper page
  175. Lloyd, D. et al. Band gap engineering with ultralarge biaxial strains in suspended monolayer MoS2 . Nano Lett. 16, 5836–5841 (2016). · DOI · Paper page
  176. Li, H. et al. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide. Nat. Commun. 6, 7381 (2015). · DOI · Paper page
  177. Conley, H. J. et al. Bandgap engineering of strained monolayer and bilayer MoS2 . Nano Lett. 13, 3626–3630 (2013). · DOI · Paper page
  178. He, K., Poole, C., Mak, K. F. & Shan, J. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2 . Nano Lett. 13, 2931–2936 (2013). · DOI · Paper page
  179. Zhu, C. R. et al. Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2 . Phys. Rev. B 88, 121301 (2013). · DOI · Paper page
  180. Castellanos-Gomez, A. et al. Local strain engineering in atomically thin MoS2 . Nano Lett. 13, 5361–5366 (2013). · DOI · Paper page
  181. Plechinger, G. et al. Control of biaxial strain in single-layer molybdenite using local thermal expansion of the substrate. 2D Mater. 2, 015006 (2015). · doi:10.1088/2053-1583/2/1/015006
  182. Hui, Y. Y. et al. Exceptional tunability of band energy in a compressively strained trilayer MoS2 sheet. ACS Nano 7, 7126–7131 (2013). · DOI · Paper page
  183. Liu, Z. et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat. Commun. 5, 5246 (2014). · DOI · Paper page
  184. Rice, C. et al. Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2 . Phys. Rev. B 87, 081307 (2013). · DOI · Paper page
  185. Desai, S. B. et al. Strain-induced indirect to direct bandgap transition in multilayer WSe2 . Nano Lett. 14, 4592–4597 (2014). · DOI · Paper page
  186. Island, J. O. et al. Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain. Nanoscale 8, 2589–2593 (2016). · doi:10.1039/c5nr08219f
  187. Duerloo, K.-A. N., Ong, M. T. & Reed, E. J. Intrinsic piezoelectricity in two-dimensional materials. J. Phys. Chem. Lett. 3, 2871–2876 (2012). · DOI · Paper page
  188. Blonsky, M. N., Zhuang, H. L., Singh, A. K. & Hennig, R. G. Ab-initio prediction of piezoelectricity in two-dimensional materials. ACS Nano 9, 9885–9891 (2015). · DOI · Paper page
  189. Kanda, Y. Piezoresistance effect of silicon. Sens. Actuators Phys. 28, 83–91 (1991). · DOI · Paper page
  190. Smith, A. D. et al. Electromechanical piezoresistive sensing in suspended graphene membranes. Nano Lett. 13, 3237–3242 (2013). · DOI · Paper page
  191. Huang, M., Pascal, T. A., Kim, H., Goddard, W. A. & Greer, J. R. Electronic—mechanical coupling in graphene from in situ nanoindentation experiments and multiscale atomistic simulations. Nano Lett. 11, 1241–1246 (2011). · DOI · Paper page
  192. Petersen, K. E. Silicon as a mechanical material. Proc. IEEE 70, 420–457 (1982). · DOI · Paper page
  193. Solomon, P. M. et al. Pathway to the piezoelectronic transduction logic device. Nano Lett. 15, 2391–2395 (2015). · doi:10.1021/nl5046796
  194. Newns, D., Elmegreen, B., Liu, X. H. & Martyna, G. A low-voltage high-speed electronic switch based on piezoelectric transduction. J. Appl. Phys. 111, 084509 (2012). · doi:10.1063/1.4704391
  195. Wu, W. et al. Piezophototronic effect in single-atomic-layer MoS2 for strain-gated flexible optoelectronics. Adv. Mater. 28, 8463–8468 (2016). · DOI · Paper page
  196. Pu, J. et al. Highly flexible MoS2 thin-film transistors with ion gel dielectrics. Nano Lett. 12, 4013–4017 (2012). · DOI · Paper page
  197. Chang, H.-Y. et al. High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems. ACS Nano 7, 5446–5452 (2013). · DOI · Paper page
  198. Lee, G.-H. et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano 7, 7931–7936 (2013). · DOI · Paper page
  199. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014). · DOI · Paper page
  200. Yoon, J. et al. Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes. Small 9, 3295–3300 (2013). · DOI · Paper page

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Metadata

Authors
Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., & Kis, A.
Venue
Nature Reviews Materials
Publisher
Springer Science and Business Media LLC
Published
2017-06-13
Volume
2
Issue
8
ISSN
2058-8437 (ISSN-L)
DOI
10.1038/natrevmats.2017.33
OpenAlex
W2627001981
Cited by
6,075
References
13
FWCI
14.04
Type
journal article
Language
en
Open access
green
Licence

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Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., & Kis, A. (2017). 2D transition metal dichalcogenides. Nature Reviews Materials. https://doi.org/10.1038/natrevmats.2017.33

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