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Cited by 266

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Quantum-Dot-Sensitized Solar Cell with Unprecedentedly High Photocurrent

Open access
Lee, Jin-Wook, Son, Dae-Yong, Ahn, Tae Kyu, Shin, Hee-Won, Kim, In Young, Hwang, Seong-Ju, Ko, Min Jae, Sul, Soohwan, Han, Hyouksoo, Park, Nam-Gyu·2013·Scientific Reports

Abstract

The reported photocurrent density (J(SC)) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm(2) despite the capability to generate 38 mA/cm(2), which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J(SC) of 30 mA/cm(2). By Hg(2+) doping into PbS, J(SC) is almost doubled with improved stability. Femtosecond transient study confirms that the improved J(SC) is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg(2+), which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J(SC), power conversion efficiency of 5.6% is demonstrated at one sun illumination.

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Crossref · 10.1038/srep01050

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Metadata

Authors
Lee, J.-W., Son, D.-Y., Ahn, T. K., Shin, H.-W., Kim, I. Y., Hwang, S.-J., Ko, M. J., Sul, S., Han, H., & Park, N.-G.
Venue
Scientific Reports
Published
2013-01-10
Volume
3
Issue
1
Pages
1050-1050
ISSN
2045-2322 (ISSN-L)
OpenAlex
W2092143294
Cited by
266
References
1
FWCI
19.54
Type
journal article
Language
en
Open access
gold

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