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Observation of a thermal hysteresis loop in the dielectric constant of spin crossover complexes: towards molecular memory devices
Abstract
Spin crossover materials made of metallo-organic/inorganic molecular complexes present magnetic susceptibility and optical reflectivity hysteresis due to an internal high-spin (HS) to low-spin (LS) cooperative spin transition with potential applications in memory, display and switching devices. Here, we report the first observation of a thermal bistability in the dielectric constant as a consequence of the HS LS transition. Better than magnetic susceptibility or optical reflectivity, this electrical property allows the effective use of such molecular materials for electronics based memories.
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Cited by
Molecular spin crossover phenomenon: recent achievements and prospects
Bousseksou, A., Molnár, G., Salmon, L., & Nicolazzi, W. (2011) · Chemical Society Reviews · doi:10.1039/c1cs15042a · Cited by 1,379
Self-citationThe spin-states and spin-transitions of mononuclear iron(II) complexes of nitrogen-donor ligands
Halcrow, M. A. (2007) · Polyhedron · doi:10.1016/j.poly.2007.03.033 · Cited by 304
Ring Closure To Form Metal Chelates in 3D Fragment-Based de Novo Design
Foscato, M., Houghton, B. J., Occhipinti, G., Deeth, R. J., & Jensen, V. R. (2015) · Journal of Chemical Information and Modeling · doi:10.1021/acs.jcim.5b00424 · Cited by 21
Metadata
- Authors
- Bousseksou, A., Molnár, G., Demont, P., & Menegotto, J.
- Venue
- J. Mater. Chem.
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2003
- Volume
- 13
- Issue
- 9
- Pages
- 2069-2071
- ISSN
- 0959-9428 (ISSN-L)
- 1364-5501
- OpenAlex
- W2014934649
- Cited by
- 264
- References
- 0
- FWCI
- 5.51
- Type
- journal article
- Language
- en
- Open access
- closed
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- Bousseksou, A., Molnár, G., Demont, P., & Menegotto, J. (2003). Observation of a thermal hysteresis loop in the dielectric constant of spin crossover complexes: towards molecular memory devices. J. Mater. Chem. https://doi.org/10.1039/b306638j
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