Stochastic memristive devices for computing and neuromorphic applications

Cited by (307)

Items 301–307 of 307

1. Multilevel capacitive switching in the Ni/Ga2O3/ZnO metal–insulator–semiconductor heterostructure memcapacitor
   Junwei Zhu, Huidong Xu, Xiaopeng Yuan, Xiang Guo, Hao Yu, Hu He, Lei Zhang · 2026 · Journal of Applied Physics
2. Resistive memory modeling: a generalized stochastic framework consolidating variability, parasitic, and temperature effects
   Evangelos Tsipas, Ioannis Tompris, Emmanouil Stavroulakis, Ioannis K. Chatzipaschalis, Theodoros Panagiotis Chatzinikolaou, Alexandros Mavropoulis, Nikolaos Vasileiadis, Iosif-Angelos Fyrigos, Vasileios G. Ntinas, Panagiotis Dimitrakis et al. · 2026 · Panhellenic Conference on Electronics & Telecommunications (PACET)
3. An Extended Memristive Switching Uncertainty Model
   G. S. Huang, Ben Daniel Rowlinson, Alexander Serb, Shiwei Wang, Themis Prodromakis · 2026 · IEEE Transactions on Electron Devices
4. Digital Twin-Enabled Sim-to-Real Reinforcement Learning for Linear and Multi-Level Analog Memristor Programming
   Zhuo Diao, Tetsuya Tohei, Akira Sakai · 2026 · SSRN Electronic Journal
5. Electrical‐Programming‐Free Neural Crossbars Enabled by Photochemical Weight Patterning
   Hoon Jang, Ji-Hoon Choi, Juhyung Seo, Seungwoo Baek, Hocheon Yoo, Hea‐Lim Park · 2026 · Advanced Functional Materials
6. A unified stochastic framework for resistive memory modeling across device technologies
   Evangelos Tsipas, Ioannis Tompris, Emmanouil Stavroulakis, Ioannis K. Chatzipaschalis, Theodoros Panagiotis Chatzinikolaou, Alexandros Mavropoulis, Iosif-Angelos Fyrigos, Vasileios G. Ntinas, Nikolaos Vasileiadis, Panagiotis Dimitrakis et al. · 2026 · AEU - International Journal of Electronics and Communications
7. Enhanced Reliability and Neuromorphic Functionality of a-IGZO-Based Memristors via N2 Annealing-Induced Vacancy Modulation
   Yu Bin Kim, Sung-Ho Kim, Dong-Min Kim, Shivam Gautam, Hi‐Deok Lee · 2026 · ACS Applied Materials & Interfaces