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Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques
Abstract
This review describes recent progress in the synthesis of transition metal dichalcogenides via vapour deposition methods with the control of the layer number and band gap energy.
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“CVD is an ideal method to prepare high-quality, few-defect MoS 2 nanosheets with controllable layer numbers on different substrates. [ 77-80 ]”
From 2D Transition‐Metal‐Dichalcogenide‐Nanosheet‐Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions (2016) · cites this paper as [77]
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Self-citation
Metadata
- Authors
- Shi, Y., Li, H., & Li, L.-J.
- Affiliations
- King Abdullah University of Science and Technology (SA)
- Nanyang Technological University (SG)
- Corresponding author
- Li, Lain-Jong
- Venue
- Chemical Society Reviews
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2015
- Volume
- 44
- Issue
- 9
- Pages
- 2744-2756
- ISSN
- 0306-0012 (ISSN-L)
- 1460-4744
- OpenAlex
- W2057882100
- Cited by
- 845
- References
- 66
- Citations by year
- 2026: 28 · 2025: 47 · 2024: 54 · 2023: 77 · 2022: 81 · 2021: 61 · 2020: 95 · 2019: 99 · 2018: 86 · 2017: 99 · 2016: 78 · 2015: 39
- FWCI
- 3.20
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Chemical Society Reviews (publishedVersion)
- PubMed (publishedVersion)
- King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) (submittedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Transition Metal Oxide Nanomaterials
- Keywords
- transition metal dichalcogenides, two-dimensional materials, chemical vapor deposition, monolayer synthesis, MoS2, MoSe2, WSe2, tungsten disulfide, substitutional doping, scalable synthesis, electronic properties
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