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2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

Huang, Wenjuan, Gan, Lin, Li, Huiqiao, Ma, Ying, Zhai, Tianyou·2016·CrystEngComm

Abstract

The remarkable properties of graphene have inspired great research interest in two-dimensional layered materials (2DLMs) with novel electronic and optical attributes. As a class of graphene-like 2DLMs, ultrathin group IIIA metal chalcogenides (GIIIAMCs, metal = In, Ga; chalcogen = S, Se, Te) have shown great potential in electronics and optoelectronics. In this review, we first introduce the crystal structures and their unique advantages in specific potential applications. Then, we summarize the progress in the fabrication of GIIIAMCs in the framework of top-down and bottom-up methods. Next, their recent achievements regarding enhanced field-effect transistor and photodetector applications are discussed in detail. In addition, the construction strategies of hybrid GIIIAMCs heterostructures and their applications in electronics and optoelectronics are presented. Finally, this review is concluded with some perspectives and an outlook for continued research.

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Metadata

Authors
Huang, W., Gan, L., Li, H., Ma, Y., & Zhai, T.
Venue
CrystEngComm
Published
2016
Volume
18
Issue
22
Pages
3968-3984
ISSN
1466-8033 (ISSN-L)
OpenAlex
W2178147923
Cited by
225
References
7
FWCI
6.79
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. https://app.cochat.ai/papers/10.1039/c5ce01986a
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Huang, W., Gan, L., Li, H., Ma, Y., & Zhai, T. (2016). 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. CrystEngComm. https://doi.org/10.1039/c5ce01986a

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