Silicon on insulator material technology
Abstract
A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.
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The "Smart Cut" technology has emerged as the standard technique for producing high-quality LN thin films.
“The development and refinement of the "Smart Cut" technology [53], commonly used to generate SOI wafers, has emerged as a the standard technique for producing high-quality LN thin films [35,54].”
From Integrated photonics on thin-film lithium niobate (2021) · cites this paper as [53]
Cites
Distribution of irradiation damage in silicon bombarded with hydrogen
Chu, W. K., Kastl, R. H., Lever, R. F., et al. (1977) · Physical review. B, Solid state · doi:10.1103/physrevb.16.3851 · Cited by 79 · see citing works
Plasma Contamination and Wall Erosion in Thermonuclear Reactors
Kaminsky, M. (1971) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.1971.4326342 · Cited by 72 · see citing works
Plasma thinned SOI bonded wafers
Mumola, P. B., Gardopee, G. J., Clapis, P. J., et al. (2005) · Proceedings - IEEE International SOI Conference/Proceedings · doi:10.1109/soi.1992.664836 · Cited by 23 · see citing works
Saint-Jacques, R. G. (1983) · Nuclear Instruments and Methods in Physics Research · doi:10.1016/0167-5087(83)90820-7 · Cited by 19 · see citing works
Mechanical response of single crystal Si to very high fluence H+ implantation
Choyke, W. J., Irwin, R. B., McGruer, J. N., et al. (1983) · Nuclear Instruments and Methods in Physics Research · doi:10.1016/0167-5087(83)90831-1 · Cited by 18 · see citing works
Radiation Damage of 50–250 keV Hydrogen Ions in Silicon
Chu, W. K., Kastl, R. H., Lever, R. F., et al. (1977) · Springer eBooks · doi:10.1007/978-1-4613-4196-3_51 · Cited by 7 · see citing works
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Integrated photonics on thin-film lithium niobate
Zhu, D., Shao, L., Yu, M., Cheng, R., Desiatov, B., Xin, C. J., Hu, Y., Holzgrafe, J., Ghosh, S., Shams-Ansari, A., et al. (2021) · Advances in Optics and Photonics · doi:10.1364/aop.411024 · Cited by 1,516 · see citing works
Emerging heterogeneous integrated photonic platforms on silicon
Fathpour, S. (2014) · Nanophotonics · doi:10.1515/nanoph-2014-0024 · Cited by 74 · see citing works
- Authors
- Bruel, M.
- Affiliations
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Corresponding author
- Bruel, M.
- Venue
- Electronics Letters
- Published
- 1995-07-06
- Volume
- 31
- Issue
- 14
- Pages
- 1201-1202
- ISSN
- 0013-5194 (ISSN-L)
- 1350-911X
- OpenAlex
- W1973671776
- Cited by
- 1,019
- References
- 6
- Citations by year
- 2026: 7 · 2025: 16 · 2024: 19 · 2023: 15 · 2022: 14 · 2021: 32 · 2020: 20 · 2019: 21 · 2018: 27 · 2017: 21 · 2016: 26 · 2015: 28 · 2014: 35 · 2013: 35 · 2012: 27
- FWCI
- 28.76
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Electronics Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Keywords
- silicon-on-insulator, wafer bonding, hydrogen implantation, heat treatment, buried oxide, semiconductor manufacturing
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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