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AlGaN/GaN HEMTs grown on SiC substrates
Abstract
The fabrication and characterisation of AlGaN/GaN HEMTs grown on SiC substrates are described. These devices have a transconductance of 70 mS/mm and a gate breakdown voltage in excess of 100 V. The HEMTs have a hard pinch-off with nearly ideal subthreshold characteristics. An fT of 6 GHz and an fmax of 11 GHz were measured for 1 µm gate length devices.
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Citations
Cited by
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Self-citationSelf-Heating in High-Power AlGaN-GaN HFETs
Gaska, R., Osinsky, A., Yang, J. W., & Shur, M. S. (1998) · IEEE Electron Device Letters · doi:10.1109/55.661174 · Cited by 301
Metadata
- Authors
- Binari, S. C., Redwing, J. M., Kelner, G., & Kruppa, W.
- Venue
- Electronics Letters
- Published
- 1997-01-30
- Volume
- 33
- Issue
- 3
- Pages
- 242-243
- ISSN
- 0013-5194 (ISSN-L)
- 1350-911X
- OpenAlex
- W2053291496
- Cited by
- 164
- References
- 0
- FWCI
- 16.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: AlGaN/GaN HEMTs grown on SiC substrates. https://app.cochat.ai/papers/10.1049/el:19970122
- The paper
- Binari, S. C., Redwing, J. M., Kelner, G., & Kruppa, W. (1997). AlGaN/GaN HEMTs grown on SiC substrates. Electronics Letters. https://doi.org/10.1049/el%3A19970122
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
