The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.
Trapping effects in GaN and SiC microwave FETs
Abstract
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this paper we review the various trapping phenomena observed in SiC- and GaN-based FETs that contribute to compromised power performance. For both of these material systems, trapping effects associated with both the surface and with the layers underlying the active channel have been identified. The measurement techniques utilized to identify these traps and some of the steps taken to minimize their effects, such as modified buffer layer designs and surface passivation, are described. Since similar defect-related phenomena were addressed during the development of the GaAs technology, relevant GaAs work is briefly summarized.
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Citations
Cites
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906451 · Cited by 1,453
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
Green, B. M., Chu, K. K., Chumbes, E. M., Smart, J. A., Shealy, J. R., & Eastman, L. F. (2000) · IEEE Electron Device Letters · doi:10.1109/55.843146 · Cited by 744
Mechanism of Yellow Luminescence in GaN
Ogino, T., & Aoki, M. (1980) · Japanese Journal of Applied Physics · doi:10.1143/jjap.19.2395 · Cited by 686
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Binari, S. C., Ikossi, K., Roussos, J. A., Kruppa, W., Park, D., Dietrich, H. B., Koleske, D. D., Wickenden, A. E., & Henry, R. L. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906437 · Cited by 656
Self-citationKlein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., & Henry, R. L. (2001) · Applied Physics Letters · doi:10.1063/1.1418452 · Cited by 288
Self-citationWright, A. F., & Grossner, U. (1998) · Applied Physics Letters · doi:10.1063/1.122579 · Cited by 208
Khan, M. A., Shur, M. S., Chen, Q. C., & Kuznia, J. N. (1994) · Electronics Letters · doi:10.1049/el:19941461 · Cited by 180
AlGaN/GaN HEMTs grown on SiC substrates
Binari, S. C., Redwing, J. M., Kelner, G., & Kruppa, W. (1997) · Electronics Letters · doi:10.1049/el:19970122 · Cited by 164
Self-citationCurrent instabilities in GaN-based devices
Daumiller, I., Théron, D., Gaquière, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U. K., Smorchkova, I. P., et al. (2001) · IEEE Electron Device Letters · doi:10.1109/55.902832 · Cited by 157
Parish, G., Keller, S., DenBaars, S. P., & Mishra, U. K. (2000) · Journal of Electronic Materials · doi:10.1007/s11664-000-0087-3 · Cited by 144
Cited by
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Joh, J., & del Alamo, J. A. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2087339 · Cited by 441
A Review of GaN HEMT Dynamic On-Resistance and Dynamic Stress Effects on Field Distribution
Gill, L., DasGupta, S., Neely, J. C., Kaplar, R. J., & Michaels, A. J. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3318182 · Cited by 68
Metadata
- Authors
- Binari, S. C., Klein, P. B., & Kazior, T. E.
- Venue
- Proceedings of the IEEE
- Published
- 2002-06
- Volume
- 90
- Issue
- 6
- Pages
- 1048-1058
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2124985289
- Cited by
- 470
- References
- 11
- FWCI
- 13.39
- Type
- journal article
- Language
- en
- Open access
- closed
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