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40 Gbit/s silicon optical modulator for high-speed applications

Liao, L., Liu, A., Rubin, D., Basak, J., Chetrit, Y., Nguyen, H., Cohen, R., Izhaky, N., Paniccia, M.·2007·Electronics Letters

Abstract

A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based on carrier depletion of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of ∼30 GHz and can transmit data up to 40 Gbit/s.

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Metadata

Authors
Liao, L., Liu, A., Rubin, D., Basak, J., Chetrit, Y., Nguyen, H., Cohen, R., Izhaky, N., & Paniccia, M.
Venue
Electronics Letters
Published
2007-10-25
Volume
43
Issue
22
Pages
1196-1197
ISSN
  • 0013-5194 (ISSN-L)
  • 1350-911X
OpenAlex
W2062375619
Cited by
402
References
0
FWCI
28.35
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: 40 Gbit/s silicon optical modulator for high-speed applications. https://app.cochat.ai/papers/10.1049/el:20072253
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Liao, L., Liu, A., Rubin, D., Basak, J., Chetrit, Y., Nguyen, H., Cohen, R., Izhaky, N., & Paniccia, M. (2007). 40 Gbit/s silicon optical modulator for high-speed applications. Electronics Letters. https://doi.org/10.1049/el%3A20072253

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.