The DOI matches its Crossref record.
Parallel operation of high power IGBTs
Abstract
The paper shows third generation IGBTs behaviour and matching when connected in parallel. Test results give the actual current sharing between modules with different case temperature, Vcesat and wiring inductances. In the case of strong Vcesat or temperature differences it can be seen there is no catastrophic current mismatching. For inductive loads, the paper presents IGBT switching waveforms and summarises recommendations for parallelling.
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In the citing paper
“The non-idealities and asymmetry affecting the dynamic unbalancing are threshold voltage (VG,th), gate signal propagation delay (td,on; td,off), rise time and fall time of the gate signal (tr; tf), gate resistance (RG), device parasitic capacitances, total power loop inductance, and gate loop inductance [18][19][20][21].”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [18]
Citations
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Metadata
- Authors
- Medaule, D.
- Venue
- IEE Colloquium on `IGBT Propulsion Drives'
- Publisher
- IEE
- Published
- 1995
- Volume
- 1995
- Pages
- 2-2
- Cited by
- 10
- References
- 0
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How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Parallel operation of high power IGBTs. https://app.cochat.ai/papers/10.1049/ic:19950529
- The paper
- Medaule, D. (1995). Parallel operation of high power IGBTs. IEE Colloquium on `IGBT Propulsion Drives'. https://doi.org/10.1049/ic%3A19950529
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
