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Metal-semiconductor contacts
Abstract
A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions.
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Cited by
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Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
Recent Progress in High‐Mobility Organic Transistors: A Reality Check
Paterson, A. F., Singh, S., Fallon, K. J., Hodsden, T., Han, Y., Schroeder, B. C., Bronstein, H., Heeney, M., McCulloch, I., & Anthopoulos, T. D. (2018) · Advanced Materials · doi:10.1002/adma.201801079 · Cited by 641
Metadata
- Authors
- Rhoderick, E. H.
- Venue
- IEE Proceedings I Solid State and Electron Devices
- Published
- 1982
- Volume
- 129
- Issue
- 1
- Pages
- 1
- ISSN
- 0143-7100 (ISSN-L)
- OpenAlex
- W4293052649
- Cited by
- 1,717
- References
- 0
- FWCI
- 11.11
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Metal-semiconductor contacts. https://app.cochat.ai/papers/10.1049/ip-i-1.1982.0001
- The paper
- Rhoderick, E. H. (1982). Metal-semiconductor contacts. IEE Proceedings I Solid State and Electron Devices. https://doi.org/10.1049/ip-i-1.1982.0001
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.