The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.
High-temperature electronics - a role for wide bandgap semiconductors?
Abstract
The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range. However practical operation of silicon power devices at ambient temperatures above 200/spl deg/C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.
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Cites
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Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Electroceramics for High-Energy Density Capacitors: Current Status and Future Perspectives
Wang, G., Lu, Z., Li, Y., Li, L., Ji, H., Feteira, A., Zhou, D., Wang, D., Zhang, S., & Reaney, I. M. (2021) · Chemical Reviews · doi:10.1021/acs.chemrev.0c01264 · Cited by 1,380
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
Lee, H., Smet, V., & Tummala, R. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2951801 · Cited by 526
Bulk and epitaxial growth of silicon carbide
Kimoto, T. (2016) · Progress in Crystal Growth and Characterization of Materials · doi:10.1016/j.pcrysgrow.2016.04.018 · Cited by 222
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
Ugur, E., Yang, F., Pu, S., Zhao, S., & Akin, B. (2019) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2019.2891214 · Cited by 159
Metadata
- Authors
- Neudeck, P. G., Okojie, R. S., & Chen, L.-Y.
- Venue
- Proceedings of the IEEE
- Published
- 2002-06
- Volume
- 90
- Issue
- 6
- Pages
- 1065-1076
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2169346090
- Cited by
- 1,050
- References
- 22
- FWCI
- 17.18
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
