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Novel metalorganic chemical vapor deposition system for GaN growth
Abstract
A novel metalorganic chemical vapor deposition (MOCVD) system, which has two different flows, has been developed. One flow carries a reactant gas parallel to the substrate, and the other an inactive gas perpendicular to the substrate for the purpose of changing the direction of the reactant gas flow. The growth of a GaN film was attempted using this system, and a high quality, uniform film was obtained over a 2 in. sapphire substrate. The carrier concentration and Hall mobility are 1×1018/cm3 and 200 cm2/V s, respectively, which are the highest for GaN films grown directly on a sapphire substrate by the MOCVD method.
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Citations
Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Hole Compensation Mechanism of P-Type GaN Films
Nakamura, S., Iwasa, N., Masayuki Senoh, M. S., & Takashi Mukai, T. M. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.1258 · Cited by 1,079
Self-citationHigh electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
Metadata
- Authors
- Nakamura, S., Harada, Y., & Seno, M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1991-05-06
- Volume
- 58
- Issue
- 18
- Pages
- 2021-2023
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2042076370
- Cited by
- 370
- References
- 0
- FWCI
- 7.98
- Type
- journal article
- Language
- en
- Open access
- closed
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- Nakamura, S., Harada, Y., & Seno, M. (1991). Novel metalorganic chemical vapor deposition system for GaN growth. Applied Physics Letters. https://doi.org/10.1063/1.105239
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