The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Hole Compensation Mechanism of P-Type GaN Films
Open accessAbstract
Low-resistivity p-type GaN films, which were obtained by N 2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1×10 6 Ω·cm after NH 3-ambient thermal annealing at temperatures above 600°C. In the case of N 2-ambient thermal annealing at temperatures between room temperature and 1000°C, the low-resistivity p-type GaN films showed no change in resistivity, which was almost constant between 2 Ω·cm and 8 Ω·cm. These results indicate that atomic hydrogen produced by NH 3 dissociation at temperatures above 400°C is related to the hole compensation mechanism. A hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed. The formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
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Cites
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Nakamura, S., Mukai, T., Masayuki Senoh, M. S., & Naruhito Iwasa, N. I. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.l139 · Cited by 1,141
Self-citationHigh-Power GaN P-N Junction Blue-Light-Emitting Diodes
Nakamura, S., Takashi Mukai, T. M., & Masayuki Senoh, M. S. (1991) · Japanese Journal of Applied Physics · doi:10.1143/jjap.30.l1998 · Cited by 844
Self-citationNovel metalorganic chemical vapor deposition system for GaN growth
Nakamura, S., Harada, Y., & Seno, M. (1991) · Applied Physics Letters · doi:10.1063/1.105239 · Cited by 370
Self-citationDeactivation of the boron acceptor in silicon by hydrogen
Sah, C.-T., Sun, J. Y.-C., & Tzou, J. J.-T. (1983) · Applied Physics Letters · doi:10.1063/1.94287 · Cited by 324
Preparation, Stability, and Luminescence of Gallium Nitride
Lorenz, M., & Binkowski, B. B. (1962) · Journal of The Electrochemical Society · doi:10.1149/1.2425318 · Cited by 111
Electron beam effects on blue luminescence of zinc-doped GaN
Amano, H., Akasaki, I., Kozawa, T., Hiramatsu, K., Sawaki, N., Ikeda, K., & Ishii, Y. (1988) · Journal of Luminescence · doi:10.1016/0022-2313(88)90117-2 · Cited by 100
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Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
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Metadata
- Authors
- Nakamura, S., Iwasa, N., Masayuki Senoh, M. S., & Takashi Mukai, T. M.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1992-05-01
- Volume
- 31
- Issue
- 5R
- Pages
- 1258
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2003757926
- Cited by
- 1,079
- References
- 8
- FWCI
- 12.47
- Type
- journal article
- Language
- en
- Open access
- bronze
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