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Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers
Abstract
This letter shows that selective heteroepitaxy of nanometer-scale InAs whiskers on SiO2-patterned GaAs substrates [Yazawa, Koguchi, and Hiruma, Appl. Phys. Lett. 58, 1080 (1991)] is induced by surface contamination with Au resulting from the fluorocarbon plasma etching process used to etch the SiO2 mask. We demonstrate that high densities (≂1010/cm2) of InAs nanowhiskers 20–30 nm in diameter can be epitaxially grown on InAs(111)B substrates onto which 1 monolayer of Au atoms had been deposited. This wirelike growth appears to be induced by ultrafine alloy droplets generated by the reactions between Au-clusters and InAs substrates.
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Citations
Cited by
Chemistry and Properties of Nanocrystals of Different Shapes
Burda, C., Chen, X., Narayanan, R., & El-Sayed, M. A. (2005) · Chemical Reviews · doi:10.1021/cr030063a · Cited by 7,230
Yan, R., Gargas, D., & Yang, P. (2009) · Nature Photonics · doi:10.1038/nphoton.2009.184 · Cited by 1,635
Semiconductor Nanowire: What’s Next?
Yang, P., Yan, R., & Fardy, M. (2010) · Nano Letters · doi:10.1021/nl100665r · Cited by 787
Solution−Liquid−Solid Growth of Semiconductor Nanowires
Wang, F., Dong, A., Sun, J., Tang, R., Yu, H., & Buhro, W. E. (2006) · Inorganic Chemistry · doi:10.1021/ic060498r · Cited by 339
Metadata
- Authors
- Yazawa, M., Koguchi, M., Muto, A., Ozawa, M., & Hiruma, K.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1992-10-26
- Volume
- 61
- Issue
- 17
- Pages
- 2051-2053
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2070541722
- Cited by
- 209
- References
- 0
- FWCI
- 2.50
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers. https://app.cochat.ai/papers/10.1063/1.108329
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- Yazawa, M., Koguchi, M., Muto, A., Ozawa, M., & Hiruma, K. (1992). Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers. Applied Physics Letters. https://doi.org/10.1063/1.108329
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