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Minority carrier lifetimes in ideal InGaSb/InAs superlattices
Abstract
Calculations of band-to-band Auger and radiative recombination lifetimes of the recently proposed InxGa1−xSb/InAs superlattices (SL) show them to be promising infrared detectors. Several superlattices with energy gaps in the 5–11 μm range exhibit suppressed p-type Auger recombination rates due to a large light hole–heavy hole splitting. The p-type Auger lifetime at 77 K of an 11 μm InxGa1−xSb/InAs SL is found to be, respectively, three and five orders of magnitude longer than those of bulk and superlattice HgCdTe with the same energy gap. The n-type lifetimes are comparable.
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Cited by
HgCdTe infrared detector material: history, status and outlook
Rogalski, A. (2005) · Reports on Progress in Physics · doi:10.1088/0034-4885/68/10/r01 · Cited by 1,047
A high-performance long wavelength superlattice complementary barrier infrared detector
Ting, D. Z.-Y., Hill, C. J., Soibel, A., Keo, S. A., Mumolo, J. M., Nguyen, J., & Gunapala, S. D. (2009) · Applied Physics Letters · doi:10.1063/1.3177333 · Cited by 364
High-speed long-wave infrared ultra-thin photodetectors
Wang, Y., Muhowski, A. J., Nordin, L., Dev, S., Allen, M., Allen, J., & Wasserman, D. (2024) · APL Photonics · doi:10.1063/5.0181052 · Cited by 13
Metadata
- Authors
- Grein, C. H., Young, P. M., & Ehrenreich, H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1992-12-14
- Volume
- 61
- Issue
- 24
- Pages
- 2905-2907
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2012445921
- Cited by
- 177
- References
- 0
- FWCI
- 6.06
- Type
- journal article
- Language
- en
- Open access
- closed
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- Grein, C. H., Young, P. M., & Ehrenreich, H. (1992). Minority carrier lifetimes in ideal InGaSb/InAs superlattices. Applied Physics Letters. https://doi.org/10.1063/1.108480
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