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Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
Abstract
Nanoscale patterning of the hydrogen terminated Si(100)-2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H-passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.
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Cited by
Unconventional Methods for Fabricating and Patterning Nanostructures
Xia, Y., Rogers, J. A., Paul, K. E., & Whitesides, G. M. (1999) · Chemical Reviews · doi:10.1021/cr980002q · Cited by 1,538
A device architecture for computing with quantum dots
Lent, C. S., & Tougaw, P. D. (1997) · Proceedings of the IEEE · doi:10.1109/5.573740 · Cited by 1,273
Fuechsle, M., Miwa, J. A., Mahapatra, S., Ryu, H., Lee, S., Warschkow, O., Hollenberg, L. C. L., Klimeck, G., & Simmons, M. Y. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.21 · Cited by 855
Atomically Precise Placement of Single Dopants in Si
Schofield, S. R., Curson, N. J., Simmons, M. Y., Rueß, F. J., Hallam, T., Oberbeck, L., & Clark, R. G. (2003) · Physical Review Letters · doi:10.1103/physrevlett.91.136104 · Cited by 398
Metadata
- Authors
- Lyding, J. W., Shen, T.-C., Hubacek, J. S., Tucker, J. R., & Abeln, G. C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1994-04-11
- Volume
- 64
- Issue
- 15
- Pages
- 2010-2012
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2033013230
- Cited by
- 489
- References
- 0
- FWCI
- 26.95
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope. https://app.cochat.ai/papers/10.1063/1.111722
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- Lyding, J. W., Shen, T.-C., Hubacek, J. S., Tucker, J. R., & Abeln, G. C. (1994). Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope. Applied Physics Letters. https://doi.org/10.1063/1.111722
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