The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Atomically Precise Placement of Single Dopants in Si
Open accessAbstract
We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
A silicon-based nuclear spin quantum computer
Kane, B. E. (1998) · Nature · doi:10.1038/30156 · Cited by 3,779
Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms
Shen, T. C., Wang, C., Abeln, G. C., Tucker, J. R., Lyding, J. W., Avouris, P., & Walkup, R. E. (1995) · Science · doi:10.1126/science.268.5217.1590 · Cited by 789
Lyding, J. W., Shen, T.-C., Hubacek, J. S., Tucker, J. R., & Abeln, G. C. (1994) · Applied Physics Letters · doi:10.1063/1.111722 · Cited by 489
Towards the fabrication of phosphorus qubits for a silicon quantum computer
O’Brien, J. L., Schofield, S. R., Simmons, M. Y., Clark, R. G., Dzurak, A. S., Curson, N. J., Kane, B. E., McAlpine, N. S., Hawley, M. E., & Brown, G. W. (2001) · Physical Review B · doi:10.1103/physrevb.64.161401 · Cited by 197
Self-citationQuantum-dot cellular automata: Review and recent experiments (invited)
Snider, G. L., Orlov, A. O., Amlani, I., Zuo, X., Bernstein, G. H., Lent, C. S., Merz, J. L., & Porod, W. (1999) · Journal of Applied Physics · doi:10.1063/1.370344 · Cited by 137
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
Oberbeck, L., Curson, N. J., Simmons, M. Y., Brenner, R., Hamilton, A. R., Schofield, S. R., & Clark, R. G. (2002) · Applied Physics Letters · doi:10.1063/1.1516859 · Cited by 102
Self-citationWang, Y., Chen, X., & Hamers, R. J. (1994) · Physical review. B, Condensed matter · doi:10.1103/physrevb.50.4534 · Cited by 86
Adsorption and Dissociation of Phosphine on Si(001)
Shan, J., Wang, Y., & Hamers, R. J. (1996) · The Journal of Physical Chemistry · doi:10.1021/jp952452h · Cited by 75
Can single-electron integrated circuits and quantum computers be fabricated in silicon?
Tucker, J. R., & Shen, T. C. (2000) · International Journal of Circuit Theory and Applications · doi:10.1002/1097-007x(200011/12)28:6<553::aid-cta127>3.0.co;2-i · Cited by 42
Dissociative adsorption of PH3 on the Si(001) surface
Miotto, R., Srivastava, G. P., & Ferraz, A. C. C. (2001) · Physical review. B, Condensed matter · doi:10.1103/physrevb.63.125321 · Cited by 35
Cited by
Fuechsle, M., Miwa, J. A., Mahapatra, S., Ryu, H., Lee, S., Warschkow, O., Hollenberg, L. C. L., Klimeck, G., & Simmons, M. Y. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.21 · Cited by 855
Self-citationMaterials challenges and opportunities for quantum computing hardware
de Leon, N. P., Itoh, K. M., Kim, D., Mehta, K. K., Northup, T. E., Paik, H., Palmer, B. S., Samarth, N., Sangtawesin, S., & Steuerman, D. W. (2021) · Science · doi:10.1126/science.abb2823 · Cited by 710
A Survey on quantum computing technology
Gyongyosi, L., & Imre, S. (2019) · Computer Science Review · doi:10.1016/j.cosrev.2018.11.002 · Cited by 646
A photonic platform for donor spin qubits in silicon
Morse, K. J., Abraham, R. J. S., DeAbreu, A., Bowness, C., Richards, T. S., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H.-J., Thewalt, M. L. W., et al. (2017) · Science Advances · doi:10.1126/sciadv.1700930 · Cited by 105
EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
Constantinou, P., Stock, T. J. Z., Tseng, L.-T., Kazazis, D., Muntwiler, M., Vaz, C. A. F., Ekinci, Y., Aeppli, G., Curson, N. J., & Schofield, S. R. (2024) · Nature Communications · doi:10.1038/s41467-024-44790-6 · Cited by 27
Self-citation
Metadata
- Authors
- Schofield, S. R., Curson, N. J., Simmons, M. Y., Rueß, F. J., Hallam, T., Oberbeck, L., & Clark, R. G.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2003-09-25
- Volume
- 91
- Issue
- 13
- Pages
- 136104-136104
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1989416179
- Cited by
- 398
- References
- 10
- FWCI
- 23.80
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Atomically Precise Placement of Single Dopants in Si. https://app.cochat.ai/papers/10.1103/physrevlett.91.136104
- The paper
- Schofield, S. R., Curson, N. J., Simmons, M. Y., Rueß, F. J., Hallam, T., Oberbeck, L., & Clark, R. G. (2003). Atomically Precise Placement of Single Dopants in Si. Physical Review Letters. https://doi.org/10.1103/physrevlett.91.136104
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
