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Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki·1994·Applied Physics Letters

Abstract

Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.

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Metadata

Authors
Nakamura, S., Mukai, T., & Senoh, M.
Venue
Applied Physics Letters
Published
1994-03-28
Volume
64
Issue
13
Pages
1687-1689
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2054227182
Cited by
3,823
References
0
FWCI
89.10
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. https://app.cochat.ai/papers/10.1063/1.111832
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Nakamura, S., Mukai, T., & Senoh, M. (1994). Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.111832

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